OPA111AM ,Low Noise Precision Difet OPERATIONAL AMPLIFIERFEATURES APPLICATIONSl LOW NOISE: 100% Tested, 8nV√Hz max l PRECISION INSTRUMENTATION(10kHz)l DATA ..
OPA111BM ,Low Noise Precision Difet OPERATIONAL AMPLIFIER®OPA111®Low Noise Precision Difet OPERATIONAL AMPLIFIER
OPA111SM ,Low Noise Precision Difet OPERATIONAL AMPLIFIERFEATURES APPLICATIONSl LOW NOISE: 100% Tested, 8nV√Hz max l PRECISION INSTRUMENTATION(10kHz)l DATA ..
OPA121KM ,Low Cost Precision Difet® Operational AmplifierFEATURESAPPLICATIONSl LOW NOISE: 6nV/√Hz typ at 10kHzl OPTOELECTRONICSl LOW BIAS CURRENT: 5pA maxl ..
OPA121KP ,Low Cost Precision Difet® Operational Amplifier®OPA121®Low Cost Precision DifetOPERATIONAL AMPLIFIER
OPA121KU ,Low Cost Precision Difet® Operational AmplifierFEATURESAPPLICATIONSl LOW NOISE: 6nV/√Hz typ at 10kHzl OPTOELECTRONICSl LOW BIAS CURRENT: 5pA maxl ..
P500-17SCL , Low Phase Noise VCXO (17MHz to 36MHz)
P500-17SCL , Low Phase Noise VCXO (17MHz to 36MHz)
P500-17SCL , Low Phase Noise VCXO (17MHz to 36MHz)
P500-G120-WH , TBU® P500-G and P850-G Protectors
P500-G200-WH , TBU® P500-G and P850-G Protectors
P502-02SCL , Low Phase Noise VCXO (24MHz to 50MHz)
OPA111AM-OPA111BM-OPA111SM
Low Noise Precision Difet OPERATIONAL AMPLIFIER
® OPA111 ® Low Noise Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS lLOW NOISE: 100% Tested, 8nV√Hz maxlPRECISION INSTRUMENTATION (10kHz) lDATA ACQUISITION lLOW BIAS CURRENT: 1pA maxlTEST EQUIPMENT lLOW OFFSET: 250μV max lOPTOELECTRONICS lLOW DRIFT: 1μV/°C max lMEDICAL EQUIPMENT—CAT SCANNER lHIGH OPEN-LOOP GAIN: 120dB min lRADIATION HARD EQUIPMENT lHIGH COMMON-MODE REJECTION: 100dB min DESCRIPTION The OPA111 is a precision monolithic dielectrically Case and
+V ® Substrate CC isolated FET (Difet ) operational amplifier. Outstand- ing performance characteristics allow its use in the 8 7 most critical instrumentation applications. –In Noise, bias current, voltage offset, drift, open-loop 2 gain, common-mode rejection, and power supply re- +In ® jection are superior to BIFET amplifiers. 3 * Noise-Free Cascode Very low bias current is obtained by dielectric isola- Output tion with on-chip guarding. Laser trimming of thin-film resistors gives very low 6 offset and drift. Extremely low noise is achieved with 2kΩ 2kΩ 10kΩ patented circuit design techniques. A new cascode Trim design allows high precision input specifications and 1 reduced susceptibility to flicker noise. 10kΩ Trim Standard 741 pin configuration allows upgrading of 5 2kΩ 2kΩ –V existing designs to higher performance levels. CC *Patented 4 ® ® BIFET National Semiconductor Corp., Difet Burr-Brown Corp. International Airport Industrial Park • Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: (520) 746-1111 • Twx: 910-952-1111 • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132 © 1984 Burr-Brown Corporation PDS-526K Printed in U.S.A. August, 1995 SBOS138
