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OP470-ATC/883 |OP470ATC883ADN/a1avaiVERY LOW NOISE QUAD OPERATIONAL AMPLIFIER


OP470-ATC/883 ,VERY LOW NOISE QUAD OPERATIONAL AMPLIFIERapplications the OP-471, with a slew rate of 8V/vs, is recommended. ABSOLUTE MAXIMUM RATINGS (N ..
OP470AY ,Very Low Noise Quad Operational Amplifier
OP470EY ,Very Low Noise Quad Operational Amplifier
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P4KE550A , Silicon Avalanche Diodes - 400W Axial Leaded Transient Voltage Supressors


OP470-ATC/883
VERY LOW NOISE QUAD OPERATIONAL AMPLIFIER
ANALOG
DEVICES
Very Low Noise Quad
Operational Amplifier
FEATURES insuring excellent gain accuracy and linearity, even in high-
. Very Low Noise ............... tinV/v/ Hz @ 1kHz Max gain applications. Input bias current is under 25nA which
D Excellent Input Offset Voltage .............. 0.4mV Max reduces errors due to signal source resistance. The 0P-470's
q Low Offset Voltage Drift ------------------- 2pV/"C Max CMR of over 110dB and PSRR of less than 1.8pV/V signifi-
. Very High Gain ......................... 1000V/mV Min canny reduce errors due to ground noise and power supply
q Outstanding CMR .-.---.--.-- .z ..._........ 110013 Min fluctuations. Power consumption of the quad OP-470 is half
. Slew Rate F................................. ttV/ps WP that of four OP-27s, a significant advantage for power con-
q Gain-Bandwidth Product .................... 6MHz Typ
. Industry Standard Quad Pinouts PIN CONNECTIONS
0 Available in Die Form 4 a
< - . F- a
ORDERING INFORMATION t , Ki
T, = .2soc PACKAGE OPERATING
Vos MAX canon: TEMPERATURE
iw10 14-PIN PLASTIC LCC' RANGE
400 - - OP47OARC/883 MIL
400 OP470AY' OP47OATC/883 MIL
400 OP470EY - - tND
E13330 OP470FY OP47_OG P - 21 14-PIN HERMETIC DIP
IMO - OP47OGS" - XIND (y-Suffix)
. Fordevicesprocessedin 1otalcompliancetoMtL-STD-883,add I883 afterpan 14-PIN PLASTIC MINI-DIP
number. Consult factory for 883 data sheet. (P-Suffix)
t Burn-in is available on commercial and industrial temperature range parts in
CerDIP, plastic DIP, and TO-can packages.
tt For availabiiity and burn-in information on so and PLCC packages, contact OUT A I . V " OUT D
your local sales olticty. IN A [2% g " -IN D
GENERAL DESCRIPTION "“ng ii" C"
The OP-470 is a high-performance monolithic quad opera- +INBE E unc
tional amplifier with exceptionally low voltage noise, -IN BE YE we
5nV/s/ Hz at 1kHz Max, offering comparable performance to OUT B E m om c
PMl's industry standard OP-27. m E El N.C
The OP-47O features an input offset voltage below 0.4mV, _
excellent for a quad op amp, and an offset drift under ov/oc, 16-PIN s_OL 28-LEAD LC
guaranteed over the full military temperature range. Open- (S-Suffix) (TC-Suffix)
loop gain of the OP-OO is over 1,000,000 into a 10k0 load
SIMPLIFIED SCHEMATIC
i 0 <5 of)
. g , m-e----;
, l _ J- _ K
fin j I
l/ F OOUT
V 24, 1 NAP f Ix rs,
MP -<9+m Sii-t:
0P-470
scious applications. The OP-470 is unity-gain stable with a
gain-bandwidth product of 6MHz and a slew rate of 2V/yS.
The OP-470 offers excellent amplifier matching which is
important for applications such as multiple gain blocks, low-
noise instrumentation amplifiers, quad buffers, and low-noise
active filters.
The OP-470 conforms to the industry standard 14-pin DIP
pinout, It is pin compatible with the OP-11, LM148/149,
HA4741, HA5104, and RM4156 quad op amps and can be used
to upgrade systems using these devices.
For higher speed applications the OP-471, with a slew rate of
8V/vs, is recommended.
ABSOLUTE MAXIMUM RATINGS (Note 1)
Supply Voltage w................................................................ t18V
Differential Input Voltage (Note 2) . .. i1.0V
Differential Input Current (Note 2) ................................. i25mA
Input Voltage '..._...........l._..--- Supply Voltage
Output Short-Circuit Duration ................................ Continuous
Storage Temperature Range
P, TC, Y-package ....................................... -650C to +150°C
Lead Temperature Range (Soldering, 60 sec) .............. 300°C
Junction Temperature (T,) ............................ -65oC to +150°C
Operating Temperature éange
OP-470A P....................-.-.--.... -550C to +125°C
OP-47OE, OP-47OF ..................................... --25oC to +85°C
OP-47OG ...................................................... -ui(y'C to +85°C
PACKAGE TYPE l A (Note 3) am UNITS
14-Pin Hermetic DIP (Y) 94 10 °C/W
14-Pin Plastic DIP (P) 76 33 ''C/W
20-Contact LCC (RC) 78 30 ''C/W
28-Conlact LCC (TC) 70 28 °CNV
16-Pin SOL (S) 88 23 ''CM
NOTES:
1. Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.
2. The OP-470's inputs are protected by back-to-back diodes. Current limiting
resistors are not used in order to achieve low noise performance. lf differential
voltage exceeds KI .0V, the input current should be limited to i25mA.
3. 8A is specified for worst case mounting conditions, i.e., 8A is specified for
device in socket for TO, CerDIP, P-DIP, and LCC packages); ' is specified
for device soldered to printed circuit board for SO and PLCC packages.
ELECTRICAL CHARACTERISTICS at Vs = :15V. TA = 25°C, unless otherwise noted.
OP-47OA/ E OP-470F OP-470G
PARAMETER SYMBOL CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS
Input Offset Voltage Vos - 0.1 0,4 - 0.2 0.8 - 0.4 1.0 mV
Input Offset Current los VCM = 0V v 3 10 - 6 20 - 12 30 nA
Input Bias Current ls VCM - 0V 7 6 25 - 15 50 - 25 60 nA
. 0.1Hzto10Hz
Input Noise Voltage enp_p (Note1) - 80 200 - 80 200 80 200 an_p
f0 r10Hz - 3.8 6.5 3.8 6.5 - 3.8 6.5
Input Noise to = 100HZ - 3.3 5.5 - 3.3 5.5 i 3.3 5.5 I--'
nV/ Hz
Voltage Density en 10: 1kHz 3.2 5.0 - 3.2 5.0 - 3.2 5.0 V
(Note 2)
_ to: 10Hz - 1.7 e -- 1.7 - - 1.7 -
Incput NT: it in to -100Hz - 0.7 - - 0.7 - - 0.7 - PA/O Hz
Wen ens' y fo=1kHz - 0.4 - - 0.4 - - 0.4 -
L Si I Vo-- :1ov
(2'C, Ir: Avo FiL = 10kil 1000 2300 - 800 1700 - 800 1700 - V/mV
ty age am RL = 2kfl 500 1200 - 400 900 - 400 900 -
Input Voltage Range IVR (Note 3) bll t12 - tll :12 - --11 :12 -
Output Voltage Swing " RL-'-- 2kfl l 12 :13 - 1-12 i113 - :12 A13 - V
Common-Mode Rejection CMR VCM = :11V 110 125 - 100 120 - 100 120 - dB
Power supply PSRR Vs- t4.5V to t18V - 0.55 1.8 - 1.0 5.6 - 1.0 5.6 YV/V
Rejection Ratio
Slew Rate SR 1.4 2 - 1.4 2 - 1.4 2 - V/us
ELECTRICAL CHARACTERISTICS at Vs = t15V, TA = 25°C, unless otherwise noted. (Continued)
OP-470A/E 0P-470F OP-4TOG
PARAMETER SYMBOL CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS
Supply Current
I N L d - 9 11 - 9 11 _ 9 11 A
(All Amplifiers) SY Q oa m
Gain Bandwidth Product GBW AV Z110 - 6 - - b" - - 6 - MHz
Channel Separation cs V0 0 W 125 155 - 125 155 - 125 155 - "
to = 10Hz (Note 1)
Input Capacitance CIN - 2 - - 2 - - 2 - pF
Input Reslslare Rm _ 014 - - 0.4 - _ 0.4 - Mil
Chf'erential-Mooe
Input Resistance
R _ - 11 - 11 - - 11 - G11
Common-Mode (NCM
AV = -1
Settling Time ts to 0.1% - 5.5 - - 5.5 - - 5.5 - ps
to 0.01% - 6.0 - - 6.0 - - 6.0 -
NOTES:
1. Guaranteed but not 100% tested,
2. Sample tested.
3. Guaranteed by CMR test.
ELECTRICAL CHARACTERISTICS at Vs = t15V, -55°C S TAS 125°C for OP-470A, unless otherwise noted,
OP-47OA
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Input Offset Voltage Vos - 0.14 0.6 mV
Average Input
TCV - o A 2 V/°
Offset Voltage Drift OS y C
Input Offset Current los l/cs, = 0V - 5 20 nA
Input Bias Current IB VCM = 0V - 15 50 nA
Vo ' 'ION/
L -Si l
(2: 8'95; Avo RLT mm 750 1600 - V/mV
g RL = 2kfl 400 800 -
Input Voltage Range IVR (Note 1) i11 i12 -
Outpm Voltage Swing V0 RL > 2km tl t13 -
C -Mode
TT'." CMR vCM = t11V 100 120 - dB
Rejection
Power Supply 7
PSRR V = +4.5V t L1BV i I, e.
Rejection Ratio s o O 6 rNN
Supply Current
I - 9 2 ll
(All Amplifiers) SY No Load mA
1. Guaranteed by CMR test.
0P-470
ELECTRICAL CHARACTERISTICS at VS " 115V,-2S'C f. T, S +85°C for OP-470E/F, -400C S T, S +85°C for OP-47OG, unless
otherwise noted.
OP-47OE OP-470F OP-470G
PARAMETER SYMBOL CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS
lnputOffselVroltage Vos - th12 0,5 - 0.24 1.0 0.5 1.5 mV
Average 'nput T
7 0.4 2 i 0.6 4 i 2 i V ''C
Offset Voltage Drift TCVos " /
Input Offset Current 103 vCM = ov A 4 20 - 7 40 - 20 50 nA
Input Bias Current Is VCM = 0V - 11 50 - 20 7O 40 75 nA
Vo - 110V
Lag: 2%; Avo RL; mm 800 1800 - 600 1400 - 600 1500 - V/mV
g EL: 2kn 400 900 - 300 700 - 300 800 -
Input Voltage Range IVR (Note 1) Ltll :12 - Ill 112 - :11 +12 -
OutputVoltage Swing Vo RLEZKU tl t13 i i12 t13 - .112 t13 -
Corrmon-M
F _ ode CMR Vcs, = t11V 100 120 - 90 115 - 90 110 - dB
Rejection
Po s l
T" .qu y _ PSRR Vs - 14.5N/to L18V - 0.7 5.6 - 1,8 10 - 1.8 10 MV/V
Rejection Ratio b
Supply Current
I 7 9.2 11 9,2 11 i 9.3 11 A
(All Amplif ers) SY No Load m
l. Guaranteed by CMR test.
0P-470
DICE CHARACTERISTICS
1. OUT A
2. *IN A
3. HM A
5. HM B
6. -IN B
7. OUT B
8. OUT C
9. -lt4 C
10. +IN C
12. +IN D
13. -IN D
" OUT D
DIE SIZE 0.163 X 0.106 inch, 17,278 sq. mils
(4.14 M 2.69 mm, 11.14 sq. mm)
WAFER TEST LIMITS at Vs = i15V, TA = 25°C, unless otherwise noted.
0P-47OGBC
PARAMETER SYMBOL CONDITIONS LIMIT UNITS
Input Offset Voltage Vos 0.8 mV MAX
Input Offset Current IOS VCM = OV 20 nA MAX
Input Bias Current IB VCM = OV 50 nA MAX
. vO = I10V
le: 3%; Av0 Rc--10kn 800 MW MIN
C) age RL = 2m 400
Input Voltage Range IVR (Note I) :11 V MIN
Output Voltage Swing Vo HLE 2kn :12 V MIN
Common Mode Rejection CMR VCM = f1IV 100 dB MIN
Power Supply. PSRR Vs--- L4.5V to i18V 5.6 rNN MAX
Rejection Ratio
Slew Rate SR 1.4 Wes MIN
Supply Current
(AllAmplifiers) Isy No Load mA MAX
l. Guaranteed by CMR test.
Electrical tests are performed at wafer probe tothe limits shown. Due 10 variations m assemtry methods and normal yield loss, yield after packaging is not guaran-
teed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
TYPICAL PERFORMANCE CHARACTERISTICS
CURRENT NOISE (aA/V’ Hi‘)
VOLTAGE NOISE (nV/x/ Hz )
INPUT BIAS CURRENT (nA)
ul mutate:
VOLTAGE NOISE DENSITY
vs FREQUENCY
G-- 25°C
vs: :15v
I/t CORNER - 5H2
10 100
FREQUENCY (Hz)
CURRENT NOISE DENSITY
" FREQUENCY
vs- '15Y
TA=25''C
M CORNER - 20tlHg
FREQUENCY (Hz)
INPUT BIAS CURRENT
vs TEMPERATURE
Vs = nsv
Vcr, = av
-50 -25 0 " 50 75 100
TEMPERATURE (°C)
VOLTAGE NOISE DENSITY
vs SUPPLY VOLTAGE
TA = 25°C
A AT 1on
3 'ss,,
E. AT 1kHz
'dl 3 -"""_
il t5 110 115 t20
SUPPLY VOLTAGE (VOLTS)
INPUT OFFSET VOLTAGE
vs TEMPERATURE
140 I I
vs = t15V -
INPUT OFFSET VOLTAGE (pV)
INPUT OFFSET CURRENT (nA)
-75 -58 -25 o 25 so rs 100 125
TEMPERATURE CC)
INPUT OFFSET CURRENT
" TEMPERATURE
Vs = :15V
ch = ov
-75 -50 -25 ll 25 50 75 100 125
TEMPERATURE CC)
CHANGE IN OFFSET VOLTAGE (,N)
INPUT BIAS CURRENT (nA)
0.1Hz TO 10Hz NOISE
NOISE VOLTAGE (100nV/DIV)
TIME (SEC)
Vs = tNN
T. - 25°C
WARM-UP OFFSET
VOLTAGE DRIFT
Vs = t16Y
TA - 25°C
0 , 2 3 4 5
TIME (MINUTES)
INPUT BIAS CURRENT "
COMMON-MODE VOLTAGE
vJ==.'sv
TA=25°C 1
7 /7 _
s "'"'
m,..,.,,..--,--"-"''
-12.6 -10 -7.5 -5 -2.5 a 2.5 5 r.s 10 12.5
COMMON-MODE VOLTAGE (VOLTS)
0P-470
TYPICAL PERFORMANCE CHARACTERISTICS
CMR (dB)
PSR (asp
GAIN (dB)
CMR " FREQUENCY
' TA - 25°C
Vs = i15V
1 10 100 1k 10k
FREQUENCY (Hz)
100k 1M
PSR vs FREQUENCY
Tn = 25°C
1 10 100 " 10k 100k 1M 10M 100M
FREQUENCY (Hz)
OPEN-LOOP GAIN, PHASE
SHIFT VS FREQUENCY
I l I I I
"s. , TA=25°C
' v =:15v_
" "%s. PHASE , 100
15 _ 120
, GAIN "s,
10 - - 149
"ss MARGIN
5 =58” - 160
"s, l _
o I 180
'ts,.-,
" l 200
-tt l 20
1 2 3 4 5 6 7 B 910
FREQUENCY (MHz)
PHASE SHIFT (DEG)
VOLTAGE GAIN (dB)
OPEN-LOOP GAIN (V/mV]
TOTAL SUPPLY CURRENT (mA)
TOTAL SUPPLY CURRENT
" SUPPLY VOLTAGE
' T --25't; ,.--'r.
' A b.-'''"
a ---.'- TA-- -125''C
TA = ,55°c///
e - r,..---'"
0 " 310 t15 F20
SUPPLY VOLTAGE (VOLTS)
OPEN-LOOP GAIN
" FREQUENCY
130 Vs = :15v
120 TA = 25 c
1 10 100 " 10k 100k 1M 10M 100M
FREQUENCY (Hz)
OPEN-LOOP GAIN
" SUPPLY VOLTAGE
5000 I
TA = 25°C
in = 10m
3000 /
2000 /
1000 l -
o :5 tio :15 T20 125
SUPPLY VOLTAGE (VOLTS)
PHASE MARGIN (DEG)
TOTAL SUPPLY CURRENT
vs TEMPERATURE
Vs = :15v
TOTAL SUPPLY CURRENT (mA)
-75 -50 -25 o 25 so 75 100 125
TEMPERATURE CCI
CLOSED-LOOP GAIN
vs FREQUENCY
A60 '; I
a "s,,, '
g 40 I
i, 20 l
g "ss, I
o ir Nd
lit 10k 100k 1M 10M
FREQUENCY (Hz)
GAlN-BANDWIDTH
PRODUCT, PHASE MARGIN
" TEMPERATURE
vs=nsv
70 e 7
so 4 t
50 2 a
-rs -50 -25 0 25 50 75 100 125 150
TEMPERATURE (°C)
ic,good price


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