OP41FJ ,LOW-BIAS-CURRENT, HIGH-STABILITY JFET OPERATIONAL AMPLIFIERfeatures a 5pA max bias current
with an opon-loop gain of over 1 million. 77'' of phase margin
pr ..
OP41GP ,LOW-BIAS-CURRENT, HIGH-STABILITY JFET OPERATIONAL AMPLIFIERapplications.
A standard 741 pin-out allows existing JFET designs and low-
power bipolar design ..
OP41GP ,LOW-BIAS-CURRENT, HIGH-STABILITY JFET OPERATIONAL AMPLIFIERCHARACTERISTICS at Vs = 1-15V, TA = 25°C. unless otherwise noted.
—_—__—_._———————-_-‘—_
OP+A/E ..
OP42 ,High Speed, Fast Settling Precision Operational AmplifierFEATURES 58V/pis slew rate and is internally compensated for unity-gain
Fast operation. 0P-42 spee ..
OP420CRC/883 ,QUAD MICROPOWER OPERATIONAL AMPLIFIERCHARACTERISTICS at Vs = i15V, TA = +25° C, unless otherwise noted.
OP-4203 OP-420C
OP-420F OP-4 ..
OP420CY ,Quad Micropower Operational AmplifierCHARACTERISTICS (V = 15 V, TA = 25C, unless otherwise noted.)SOP420COP420GParameter Symbol Condit ..
P4C1024L-70SI , LOW POWER 128K x 8 CMOS STATIC RAM
P4C116-20PC , ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS
P4C116-20PC , ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS
P4C116-25PC , ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS
P4C116-25PC , ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS
P4C116-35PC , ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS
OP41FJ-OP41GP
LOW-BIAS-CURRENT, HIGH-STABILITY JFET OPERATIONAL AMPLIFIER
ANALOG
DEVICES
l.tnMlias-thrrtmt, High-Stability
JFEI Operational Amplifier
0P-41*
FEATURES
. LothaCumM ......... '..'.._ ......... sum):
. Low Cum! Consumption . . . .............. t.0mA Max
0 High Gain ........................... 1000V/mV Min
0 High Common-Modo RHeetkm ............. 10MB Mn
. Symmeuicat swam: ...... . ' ......... ttmos Min
. Low Harmonic Distortion .............. <0.0N at 5m:
. th Margin ...... . ............ ' ' . . ' ...... rr M
. Available in me Form
ORDERING INFORMATION t
TA;2s-c PACKAGE 095mm
v08 m PLASTIC SO TEMPERATURE
(W) Toae bPltl "IN RANGE
500 OPMAJ' - - MIL
250 OPMEJ - - IND
1000 OPMBJ' - - MIL
750 OP(IFJ - - MD
2000 - thMt ap ONIGS XIND
. For dovicu procuud intom 'rampant' to MlL-STD-aas. "om "'rpert
number. Consult factory tor m data shoot.
t aurn-In In animal. on commercial and industrial temperature range pans in
dep. pugiis mo. and TO-m packages.
GENERAL DESCRIPTION
The OP.41 JFET-Input op amp features aSpA max bias current
with an open-loop gain of over 1 million. 77'' ot phase margin
provides exceptional stability, even in unity-gain with capaci-
tive loads. The output is guaranteed stable with 250pF loads at
unity-gain, and will typically drive several thousand pF. Trate
sienl response is extremely clean, and is cortsidtrrabty improved
over industry-standard JFET amplifiers.
SIMPLIFIED SCHEMATIC
The 0P-41's cascade input stage boosts CMR to over 100dB,
improves CMR linearity, and stabilizes bias current with chang-
ing cotttmtart-modtt voltage. The linear common-mode rejection
ot 10thtB min is unusually good for a FET input amplifier. The
OP-4t consumes only 750M supply current and has a power-
supply rejection mm ot 25uV/V, making it an ideal choice tor
battery-operated systems. Despite the low suppIy-dram. the
slew-rate is a respectable 12V/ps, and symmetrical. Using
zener-zap trimming techniques. offset voltage is adjusted to
below 500W which eliminates the need tot external nulling in
many applications. The OP-41's guaranteed gain of 1 million
into a 2hit load, combined with the linear 100438 minimum
CMR, vastly improves linearity over competitive Iow-cost de-
vices. Linearity is excellent in both low-gain and high-gain
amplifier configurations. m voltage follower applications CMR
eliects dominate linearity, and in high-gain applications open-
loop gain dominates linearity, hence the pertormance advantage
ot the OP-41.
PIN CONNECTIONS
mu "Nu " I N C,
-IN [I n v. NULL I , "
"" Ur, "lout
V- II a MILK "“ 1 s out
EPOXY MlNl-DIP 4” , 5 mm.
(P-Suffix) q v. TCASEY
MIN SO T0-99
(S4tumxl (JoSumx)
'Manufactured under the following US. patent: 4,538,115.
The device exhibits rapid recovery from signal overtoad.
Following saturation at the positive supply, the output recover:
in only Gus. and from a negative overdrive in only 100ns.
The combination ot Iow-power. low bias current, and highogaln.
plus the superior CMR and PSRR performance of the OP-M,
make it suitable in a wide variety ot demanding applications.
The device makes an excellent output amplifier tor CMOS
DACs. Where Iow-powor Consumption is needed in portable
instrumentation, the OP-41 permits high-gain and high-
accuracy ampMcatlon with good speed performance, The low
and stable bias current makes it an excellent choice as a
photodiode amplifier in medical applications.
A standard 741 pin-out allows existing JFET designs and low-
power bipolar designs to be upgraded by switching to the
ABSOLUTE MAXIMUM RATINGS (Note 2)
Supply Voltage "..-....r-.....---...--- :1BV
Input Voltage (Note I)... ...1av
Output Short-Circuit Duration ..... .. lttdttfittittt
Difftrrentittl Input Voltage (Note 1) .................. ............ tl 8V
Storage Temperature Range ......................... -65'C to +150'C
Operating Temperature Range
OP-41A, B (J) ........................... , .......... "o-SST to +125'C
OP-OE, F M....,.... .'.. s...-25'C to +85'C
0P-41G (P5) ........... . ....................... '.... -4tPtt to +85'C
Lead Temperature Range (Soldering. 60 sec.) ..rt..F..... o30tPC
Junction Temperature .................................... -65'C to ot6trt)
PACKAGE ms enmore a) the uurrs
TO." u) 150 " 'ch
0-Pin Hun: ow tn 103 " 'CM
0-W- so (S) 158 " 'C/W
NOTES:
t. For :uppty vottagn 1m than .mnv. tho mutate maximum Input mg- I:
equal to the supply voltage.
Mute maximum ratings apply to both DICE and plmgoo puts. union
0mm:- nuhd.
'wyet.etr"tettru1tintt condition. ltfiPeiti"ttrttr
min mum TO and F-DtP packagu: sub apowtod 10mm Iotduod
to plintod - board for so package.
ELECTRICAL CHARACTERISTICS at vs = t15V, TA = we. unless otherwise noted.
OP+ AIE t9P.41 B/F OP-41 G
PARAMET‘R SVIIIOL CONDITIONS MIN '" MAX Mitt T" MAX MIN TYP MAX UNITS
OP-me/F/G - 200 250 - 400 750 - 500 2000
uttut vottagn vos OP-MA/B - 2t10 $00 - 400 'ooo - - - “V
tttttttt Current los (Nola " - th04 1 - 0.05 2 - 0.05 5 mt
Bin Current 1. (Note " - 3.0 5 - " to - 3.5 20 PA
Open-Laop h t 2m
t - t - 4000 - v
Voltage Gain Avo v0 = ttOV ooo $000 Mn ooo MX) Wm
om" WM” vo _ = 21m 212.: 3.12 a - $120 2126 - 3.12.0 $12.6 - v
Supply Current ts, vo = tht - .15 1.0 - .75 1.2 - .75 1.2 mA
Input Wattage out res - . " '15 _ v
Rwy. NR (Note 2) 1m -ltd5 ttl -115 k MIS
'ttT'"" CMR Ito, a ttttt 100 ns - 90 no - so no - ca
Reieotion
"rr 'Ply . PSRR vs a tttW to Y18V - s 25 - 10 so - no so .wv
Rejection Rune
Nose Voltage , -
Density Rotaueu en 1kHg - 32 - 32 - - 32 - nV/v'Hl
to Input
Short Ctvcun Short Circuit '20 ~20 s20
. _ u t36 " +36 t6 136 mA
Output Currant sc to Ground , 2 48 ~18 48
Slow R110 SR 1 M - , " - 1 C3 _ Vim
Gain Bandwidth GBW - 500 - - soo - - 500 - kHz
Power Bandwidth aw, - N - 20 - - Ru - ka
ELECTRICAL CHARACTERISTICS at Vs - 115V, TA = EPO, unless otherwise noted. (Continued)
0P-41A/E OPMt B/F OP-MG
PARAMETER SYMBOL CONDITION8 KIN TY, MAX MIN TYP BAX IIIN TTP MAX UNITS
ttht sup AV " -1
Sammy 11m. ts to 0.19. - 10 - - m - _ 10 - p:
ttt O 01% - 12 - - 12 - - 12 -
' Positive Going - 0.1 - - tht - - 0.1 -
Outlaw Rummy Nngltm Gomg - 6.0 - - 6.0 - .-_ " - MS
Capacitive Loud A, . , 1
Stability (Note 8) 250 >1000 - 250 >1000 - 250 >1000 - pF
Opcn-Laop Output
Resistance Ro - TSO - - 150 - - 150 - u
NOTES:
t. Warmed up. ch - 0
2. Guarani.“ by CMR mt.
3. Guaranteed but nol leslcd.
ELECTRICAL CHARACTERISTICS at Vs = 1151/, TA = -55'' CI+125°C. untess otherwise noted.
0941A OP-41 B
MMMETER SYMBOL CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
thtm Voluge vos - 400 1000 - 600 2000 uV
Temperature
Comicilnt ot
- . . 1 l‘
input Ottset ch05 2 s s 3 5 o yV c
voltage
011»! Current los (Noun 1) - 40 1000 - so 2000 M
Bio Current I. (Note 1) - 4000 7500 - 4500 15000 pA
Opan-Looa h a am
A 1000 5000 - 500 3000 - wmv
Voltage Gain V" Ito . 110v
Output Vonagn V
T, - . . - :1 . . -
sum vo 11 am -120 1125 IS t12.5 v
Supply Cumnl ' Ito B 0V - .75 1.2 - " 1.2 mA
Input What 015 'ls
Rum IVR (Note 2) +11 -tt.5 tlt 41.5 ll
Common-Mode
MR V = ttV 95 105 - M 100 - "
Roleclion C on t
'tT 59”" PSRR Vs " t10V ttt t18V - s w - 10 100 “um
Rolocuon Ratio
Short Circuit . _ ~12 112
Output Current 'sc Short Circuit to Ground -6 _ " t36 16 - l t36 mA
Slew Rm SR 1 1.3 - 1 1.3 - V/m
Gain Bandwidth GBW - $00 - 500 - kHz
Power Bandmath Bm, - 20 - - " - KHz
Capacitive Load Av x .1
1 " 1 - 100 >1000 - F
Stability (Note 3) 00 / 000 p
HOTS..
1. Warmer) up. ch " 0
2. Guauntud by CMR 1031.
t Guamnvaad But not tested.
ELECTRICAL CHARACTERISTICS at v, = st5V, T, " -25'CH85T for E/F grades and -4tr'tW85'C for G grade, unless
otherwise noted.
OP-“E 0P-41F ttP-ata
MIAMI SYMBOL CONDITIONS “IN "P IIAX HIM TYP MAX MIN TYP MAX UNITS
011m Vomgv vos - 250 MO - 500 1750 - 500 2500 taV
Temperature
Cotrtfieient ot
Input (mm TtWos ‘ 3.5 8 - M - - " - W/''C
Vollago
Oftset Current Ins tNote " - 5 100 - til 200 - 20 - pA
Bias Cunenl I I (N01. 1) - 240 $00 - 300 1000 - too 500 PA
OponoLoop Ru = " n
voungo Gain Avo Ito = :10V 1000 5000 500 4an 500 4000 - V/mV
01119111 Q £90 Yo h a "n 112.0 $12.6 - :11.5 112.5 - ttld 112.5 - v
Supply Current Isy Ito . tN - 0.75 1.2 - 0.75 1.2 - 0.75 1.2 mA
Input vomga + +15 +15 +15
tl - 1 - 11 - v
Range NR (Note 2) t - 11.5 tl _ 11.5 t -tt,5
Common-Modc
- - w " - 1 - -
Rejoclion CMR ch 1, 95 O " 00 85 100 dB
"tT 'Y " PSRR 1/s = 3.1ov to t18V - s 40 - 10 100 - to 100 tNN
Rexccnon Rana .
Short Circuit Short Circuit o 16 +16 f 20
I t t - -
Output Current SC ttt Ground 6 -18 at) 16 -18 I.36 t6 -18 ‘36 mA
Slew Hal: SR 1 1.3 - 1 1.3 - 1 1.3 V/ps
Gain Bandwidth GBw - 500 - - 500 - - 500 - kHz
Power Bandwidlh BW,, - 20 - - 20 - - 20 - km
Capacitive Load AV = H _
100 1 - 1 1000 - 100 - 1 - F
Stlbilily (Note 3) ' tXX) oo P ooo p
NOTE!:
1. Wavmed up. Vca, - O
2. Guaranteed by CMR test
3. Guaranteed but not tested.
BURNAN CIRCUIT
b Will
uli—v‘ A
l 0941
DICE CHARACTERISTICS
1. OFFSET VOLTAGE NULL
, INVEMING INPUT
3. NONINVERTING INPUT
1. NEGATIVE SUPPLY
E OFFSET VOLTAGE NULL
& AMPLIFIER OUTPUT
r. POSITIVE SUPPLY
DIE 3le Mitt x tum inch. N22 " mm
(2.92 x 1.8mm, M2 sq. m)
WAFER TEST LIMITS at vs ' K15V, TA ' 25''C, unless otherwise noted.
OP-m N
PAW”!!! SYMBOL CONDITIONS LIMIT UNITS
oitsett Vollaqe Vos 1000 W MAX
Bin Curran! b (Note v) 20 pA MAX
Open-Loop Voltage Gain Am 'k at 2en 500 WmV MIN
Output Voltage Swing Ito Re = nn tli v MIN
Supply Current 's, V0 x av " mA MAX
Input Voltage Range IVR (Note 2) tll V MIN
Common-Mode .
T 4, l [18 MIN
Aeiection CMR ch , v 90
Poweu Suppty _
Rejection Ratio SRR Vs XIOV to -18V 80 'NN MAX
Snort Circuit ' F :6 mA MIN
Output Current 'se Short Cirruit ttt Ground :35 mA MAX
Slew Rate SR 1 Vlys MIN
Capacitive Load
, T 250 F MIN
Statritity AV ' (Note 3) n
1. Von _ 0
2. Guuantud try CMR tut.
3, Gqumned but not Icsled.
Electrical lest: no performed It min probe to the limits shown Due to variations in assembly methods and normal y-oid loss. yield after packaging is not guaranteed
tttt uandlrd product dice. Conlult laclory to momma :pocmcauon: based on nice lot twalltlcatiort through sample lot assembly and resting
