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OP400AY-OP400EY-OP400FY-OP400GP-OP400GS-OP400HP-OP400HS
Quad Low-Offset, Low-Power Operational Amplifier
Quad Low-Offset, Low-Power
Operational AmplifierREV.A
FEATURES
Low Input Offset Voltage 150 �V Max
Low Offset Voltage Drift, Over –55�C to +125�C
1.2 pV/�C Max
Low Supply Current (Per Amplifier) 725 �A Max
High Open-Loop Gain 5000 V/mV Min
Input Bias Current 3 nA Max
Low Noise Voltage Density 11 nV/÷Hz at 1 kHz
Stable With Large Capacitive Loads 10 nF Typ
Pin Compatible to LM148, HA4741, RM4156, and LT1014
with Improved Performance
Available in Die Form
PIN CONNECTIONS
GENERAL DESCRIPTIONThe OP400 is the first monolithic quad operational amplifier
that features OP77 type performance. Precision performance no
longer has to be sacrificed to obtain the space and cost savings
offered by quad amplifiers.
The OP400 features an extremely low input offset voltage of
less than 150 mV with a drift of under 1.2 mV/∞C, guaranteed
over the full military temperature range. Open-loop gain of the
OP400 is over 5,000,000 into a 10 kW load, input bias current is
under 3 nA, CMR is above 120 dB, and PSRR is below 1.8 mV/V.
On-chip zener-zap trimming is used to achieve the low input
offset voltage of the OP400 and eliminates the need for offset
nulling. The OP400 conforms to the industry-standard quad
pinout which does not have null terminals.
The OP400 features low power consumption, drawing less than
725 mA per amplifier. The total current drawn by this quad
amplifier is less than that of a single OP07, yet the OP400 offers
significant improvements over this industry standard op amp.
Voltage noise density of the OP400 is a low 11 nV/÷Hz at 10 Hz,
which is half that of most competitive devices.
The OP400 is pin-compatible with the LM148, HA4741,
RM4156, and LT1014 operational amplifiers and can be used
to upgrade systems using these devices. The OP400 is an ideal
choice for applications requiring multiple precision operational
amplifiers and where low power consumption is critical.
14-PIN HERMETIC DIP(Y-Suffix)
14-PIN PLASTIC DIP(P-Suffix)
16-PIN SOL(S-Suffix)
Figure 1. Simplified Schematic (One of Four Amplifiers is Shown)
OP400–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
ParameterNOTESSample tested
(@ VS = 15 V, TA = 25�C, unless otherwise noted.)
OP400
SPECIFICATIONS (continued)
ELECTRICAL CHARACTERISTICS(@ VS = 15 V, –55�C < TA = 125�C for OP400A, unless otherwise noted.)NOTE
*Guaranteed by CMR test
ELECTRICAL CHARACTERISTICSAverage Input Offset
Input Offset
Input Bias
Large-Signal
Output Voltage
Capacitive Load
(@ VS = �15 V, –25�C < TA S �85�C for OP400E/F, 0�C S TA < 70�C for OP400G,
–40�C < TA < +85�C for OP400H, unless otherwise noted.)
OP400
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
OP400 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
DIE SIZE 0.181 � 0.123 inch, 22,263 sq. milts
(4.60 � 3.12 mm, 14.35 sq. mm)
ORDERING INFORMATION
VOS MaxNOTESFor devices processed in total compliance to MIL-STD-883, add/883after part
number. Consult factory for 883 data sheet.Burn-in is available on commercial and industrial temperature range parts in
CerDIP, plastic DIP, and TO-can packages.
For Military processed devices, please refer to the standard
microcircuit drawing (SMD) available at
www.dscc.dla.mil/programs/milspec/default.asp
OP400GBC
ParameterSymbolConditionsLimitUnitInput Offset VoltageVOS230mA Max
Input Offset CurrentVOSVCM = 0 V2nA Max
Input Bias CurrentIBVCM = 0 V6nA Max
Large SignalAVOVO = ±10 V RL = 10 kW3000
Voltage GainRig 2 kW1500V/mV Min
Input Voltage Range*IVR*±12V Min
Common Mode RejectionCMRVCM = ±12 V115dB Min
Power Supply Rejection RatioPSRRVS = ±3 V to ±18 V3.2mV/V Max
Output Voltage SwingVORL = 10 kW
RL = 2 kW±12V Min
Supply Current Per AmplifierISYNo Load725mA Max
NOTE
*Guaranteed by CMR test.
Electrical tests are performed at wafer probe to the limits shown Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
1. OUT A8. OUT C
2. IN A9. IN C
3. +INA10. +IN C
4. V+11. V-
5. +IN B12. +IND
6. IN B13. IN D
7. OUT B14. OUT D
DICE CHARACTERISTICS
WAFER TEST LIMITS(@ VS = �15 V, TA = 25�C, unless otherwise noted.)
TPC 1.Warm-Up Drift
TPC 4.Input Offset Current
vs. Temperature
TPC 7.Noise Voltage Density
vs. Frequency
TPC 2.Input Offset Voltage
vs. Temperature
TPC 5.Input Bias Current vs.
Common-Mode Voltage
TPC 8.Current Noise Density
vs. Frequency
TPC 3.Input Bias Current
vs. Temperature
TPC 6.Common-Mode Rejection
vs. Frequency
TPC 9.0.1 Hz to10 Hz Noise
OP400TPC 10.Total Supply Current
vs. Supply Voltage
TPC 13.Power Supply
Rejection vs. Temperature
TPC 16.Closed-Loop Gain
vs. Frequency
TPC 11.Total Supply Current
vs. Temperature
TPC 14.Open-Loop Gain vs.
Temperature
TPC 17.Maximum Output
Swing Frequency
TPC 12.Power Supply Rejection
vs. Frequency
TPC 15.Open-Loop Gain and
Phase Shift vs. Frequency
TPC 18.Total Harmonic
Distortion vs. Frequency
