OP400 Fast Delivery |IC PHOENIX CO.,LIMITED

OP400 ,Quad Low-Offset, Low Power Operational AmplifierCHARACTERISTICSS AOP400A/E OP400F OP400G/HParameter Symbol Conditions Min Typ Max Min Typ Max Min T ..
OP400ATC , Quad Low Offset, Low Power Operational Amplifier
OP400AY ,Quad Low-Offset, Low-Power Operational AmplifierCHARACTERISTICS (@ V = 15 V, –55C T = 125C for OP400A, unless otherwise noted.)S AParameter Symb ..
OP400AY ,Quad Low-Offset, Low-Power Operational AmplifierFEATURES PIN CONNECTIONSLow Input Offset Voltage 150 V Max14-PIN HERMETIC DIP 16-PIN SOLLow Offset ..
OP400EY ,Quad Low-Offset, Low-Power Operational AmplifierSPECIFICATIONS(@ V = 15 V, T = 25C, unless otherwise noted.)ELECTRICAL
OP400FY ,Quad Low-Offset, Low-Power Operational Amplifierapplications requiring multiple precision operationalpinout which does not have null terminals. amp ..
P45N02 ,45A / 20V / 0.022 Ohm / N-Channel Logic Level Power MOSFETsFeatures Description• 45A, 20V The RFP45N02L, RF1S45N02L, and RF1S45N02LSM areN-Channel power MOSFE ..
P45N03LTG , N-Channel Logic Level Enhancement Mode Field Effect Transistor
P45N03LTG , N-Channel Logic Level Enhancement Mode Field Effect Transistor
P45N03LTG , N-Channel Logic Level Enhancement Mode Field Effect Transistor
P45N03LTG , N-Channel Logic Level Enhancement Mode Field Effect Transistor
P4802CAL , gas plasma arresters-package dimensions/specifications

OP400
Quad Low-Offset, Low Power Operational Amplifier
Quad Low-Offset, Low-Power
Operational Amplifier
REV.B
FEATURES
Low Input Offset Voltage 150 �V Max
Low Offset Voltage Drift, Over –55�C to +125�C
1.2 pV/�C Max
Low Supply Current (Per Amplifier) 725 �A Max
High Open-Loop Gain 5000 V/mV Min
Input Bias Current 3 nA Max
Low Noise Voltage Density 11 nV/÷Hz at 1 kHz
Stable With Large Capacitive Loads 10 nF Typ
Pin Compatible to LM148, HA4741, RM4156, and LT1014
with Improved Performance
Available in Die Form
PIN CONNECTIONS
GENERAL DESCRIPTION
The OP400 is the first monolithic quad operational amplifier
that features OP77 type performance. Precision performance no
longer has to be sacrificed to obtain the space and cost savings
offered by quad amplifiers.
The OP400 features an extremely low input offset voltage of
less than 150 mV with a drift of under 1.2 mV/∞C, guaranteed
over the full military temperature range. Open-loop gain of the
OP400 is over 5,000,000 into a 10 kW load, input bias current is
under 3 nA, CMR is above 120 dB, and PSRR is below 1.8 mV/V.
On-chip zener-zap trimming is used to achieve the low input
offset voltage of the OP400 and eliminates the need for offset
nulling. The OP400 conforms to the industry-standard quad
pinout which does not have null terminals.
The OP400 features low power consumption, drawing less than
725 mA per amplifier. The total current drawn by this quad
amplifier is less than that of a single OP07, yet the OP400 offers
significant improvements over this industry standard op amp.
Voltage noise density of the OP400 is a low 11 nV/÷Hz at 10 Hz,
which is half that of most competitive devices.
The OP400 is pin-compatible with the LM148, HA4741,
RM4156, and LT1014 operational amplifiers and can be used
to upgrade systems using these devices. The OP400 is an ideal
choice for applications requiring multiple precision operational
amplifiers and where low power consumption is critical.
14-PIN HERMETIC DIP
(Y-Suffix)
14-PIN PLASTIC DIP
(P-Suffix)
16-PIN SOL
(S-Suffix)
Figure 1. Simplified Schematic (One of Four Amplifiers is Shown)
OP400–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Parameter
NOTESSample tested
(@ VS = 15 V, TA = 25�C, unless otherwise noted.)
OP400
SPECIFICATIONS (continued)
ELECTRICAL CHARACTERISTICS(@ VS = 15 V, –55�C < TA = 125�C for OP400A, unless otherwise noted.)
NOTE
*Guaranteed by CMR test
ELECTRICAL CHARACTERISTICS
Average Input Offset
Input Offset
Input Bias
Large-Signal
Output Voltage
Capacitive Load
(@ VS = �15 V, –25�C < TA S �85�C for OP400E/F, 0�C S TA < 70�C for OP400G,
–40�C < TA < +85�C for OP400H, unless otherwise noted.)
OP400
OP400GBC
ParameterSymbolConditionsLimitUnit
Input Offset VoltageVOS230mA Max
Input Offset CurrentVOSVCM = 0 V2nA Max
Input Bias CurrentIBVCM = 0 V6nA Max
Large SignalAVOVO = ±10 V RL = 10 kW3000
Voltage GainRig 2 kW1500V/mV Min
Input Voltage Range*IVR*±12V Min
Common Mode RejectionCMRVCM = ±12 V115dB Min
Power Supply Rejection RatioPSRRVS = ±3 V to ±18 V3.2mV/V Max
Output Voltage SwingVORL = 10 kW
RL = 2 kW±12V Min
Supply Current Per AmplifierISYNo Load725mA Max
NOTE
*Guaranteed by CMR test.
Electrical tests are performed at wafer probe to the limits shown Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
WAFER TEST LIMITS(@ VS = �15 V, TA = 25�C, unless otherwise noted.)
DIE SIZE 0.181 � 0.123 inch, 22,263 sq. milts
(4.60 � 3.12 mm, 14.35 sq. mm)
1. OUT A8. OUT C
2. –IN A9. –IN C
3. +INA10. +IN C
4. V+11. V-
5. +IN B12. +IND
6. –IN B13. –IN D
7. OUT B14. OUT D
DICE CHARACTERISTICS
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
ORDERING INFORMATION
VOS Max
NOTESFor devices processed in total compliance to MIL-STD-883, add/883after part
number. Consult factory for 883 data sheet.Burn-in is available on commercial and industrial temperature range parts in
CerDIP, plastic DIP, and TO-can packages.
For Military processed devices, please refer to the standard
microcircuit drawing (SMD) available at
www.dscc.dla.mil/programs/milspec/default.asp
ABSOLUTE MAXIMUM RATINGS
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±20 V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . .±30 V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . Supply Voltage
Output Short-Circuit Duration . . . . . . . . . . . . . . .Continuous
Storage Temperature Range
P, Y-Package . . . . . . . . . . . . . . . . . . . . . . –65∞C to +150∞C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . .300∞C
Junction Temperature (TJ) . . . . . . . . . . . . . .–65∞C to +150∞C
Operating Temperature Range
OP400A . . . . . . . . . . . . . . . . . . . . . . . . . . –55∞C to +125∞C
OP400E, OP400F . . . . . . . . . . . . . . . . . . . –25∞C to +85∞C
OP400G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0∞C to 70∞C
OP400H . . . . . . . . . . . . . . . . . . . . . . . . . . . .–40∞C to +85∞C
NOTES
1. �jA is specified for worst case mounting conditions, i.e., �jA is specified for device
in socket for TO, CerDIP, and P-DIP packages; �jA is specified for device soldered
to printed circuit board for SO package.
2. Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.
OP400–Typical Performance Characteristics
TPC 1.Warm-Up Drift
TPC 4.Input Offset Current
vs. Temperature
TPC 7.Noise Voltage Density
vs. Frequency
TPC 2.Input Offset Voltage
vs. Temperature
TPC 5.Input Bias Current vs.
Common-Mode Voltage
TPC 8.Current Noise Density
vs. Frequency
TPC 3.Input Bias Current
vs. Temperature
TPC 6.Common-Mode Rejection
vs. Frequency
TPC 9.0.1 Hz to10 Hz Noise

Partno	Mfg	Dc	Qty	Available	Descript
OP400	AD	N/a	508	avai	Quad Low-Offset, Low Power Operational Amplifier