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OP32-OP32EZ-OP32FZ-OP32GZ
High-Speed(Avcl => 10) Programmable Micropower Operational Amplifier
ANALOG
DEVICES
High-Speed (hm. 12e lil) Programmable
Micropower Operational Amplifier
FEATURES
. Programmable Supply Current ..................... 500nA to 2mA
. Single Supply Operation ................................... +3V to +30V
. Dual Supply Operation ............... ................ :1.5Vto :15V
. Low Input Offset Voltage .................................... 100W
. Low Input Offset Voltage Drift w............................... 0.5uV/°C
. High Common-Mode Input Range .............. V- to V+ (--1.5V)
' High CMRR and PSRR ............................................... 115dB
q High Open-Loop Gain .......................................... 2000V/mV
. s30V Input Overvoltage Protection
. Fast e..................................................... 1V/us @ lsv = 300PA
. LM4250 Pinout
q Compensated for Minimum Gain of 10
. Available in Die Form
ORDERING INFORMATION'
T, = 25°C PACKAGE OPERATING
Vos MAX CERDIP PLASTIC TEMPERATURE
(pV) 8-PIN 8-PIN RANGE
300 - OP32AZ' MIL
300 OP32EP OP32EZ IND
500 OP32F P OP32FZ IND
1000 OP32GP OP32GZ IN D
For devices processed in total compliance to MIL-STD-883, add /883 after part
number. Consult factory for 883 data sheet.
t Burn-in is available on commercial and industrial temperature range parts in
CerDIP. plastic DIP, and TO-can packages.
precision performance when the OP-32 is used with an
unregulated battery or vehicular electrical system.
The wide input voltage range, including the negative supply
or ground, allows use in single-battery applications. The
OP-32 is characterized over a wide supply range of t 1.5V to
:15V. This guarantees predictable performance with any
commonly available supply.
The ability to operate at relatively high speed with low power
consumption makes this amplifier ideal for remote applica-
tions where power is limited. The programmability allows
each amplifier in a system to be set for the minimum power
consumption necessary for each specific application.
Programmability also makes it possible to adjust the band-
width and phase shift.
The OP-32 pinout is identical to the LM4250 and many other
micropower operational amplifiers. This allows easy up-
grading of system performance.
PIN CONNECTIONS
8-PIN EPOXY DIP
(P-Suffix)
8-PIN HERMETIC DIP
(Z-Suffix)
GENERAL DESCRIPTION
The OP-32 is a high-speed, high-gain programmable opera-
tional amplifier. Both offset voltage and offset current are .Do NOT Sri0RTlserT0v-OR GROUND
low, and both are stable with changes in temperature, supply SEE APPLICATIONS INFORMATION
voltage, and set current. High CMRR and PSRR ensure
SIMPLIFIED SCHEMATIC
01 02 c--o0UTPUT
.IN o-ka:, 'Cin gun c2
ass) V06
1m IMI -1- C1 8) "t l) [
i l ov-
NULL NULL
ABSOLUTE MAXIMUM RATINGS (Note 1)
Supply Voltage ................................................................. t18V
Differential Input Voltage .................................................... 130
Input Voltage P....-..---..-..........- Supply Voltage
Storage Temperature Range
2 Package .................................................. -650C to +150°C
P Package .................................................. -55"C to +125°C
Operating Temperature Range
OP-32A ...................................................... -S5"C to +125°C
OP-32E, F, G ............................................... -25"C to +85°C
Lead Temperature Range (Soldering, 60 sec) .............. 300°C
Junction Temperature ................................... -65"C to +150°C
PACKAGE TYPE 9” (Note 2) "s UNITS
8-Pin Hermetic DIP (Z) 148 16 'G/W
8-Pin Plastic DIP (P) 100 43 W
NOTES:
1. Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.
2. 8A is specified tor worst case mounting conditions, Le., ' is specified for
device in socket for CerDIP and P-DIP packages.
ELECTRICAL CHARACTERISTICS at Vs = :1.5V to :15V, 15pA S Isy s 450PA, TA = +25° C, unless otherwise noted.
OP-32A/ E 0P-32F OP-32G
PARAMETER SYMBOL CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS
Input Offset Voltage Vos - 100 300 - 200 500 - 400 1000 PV
Input Offset current los VCM = 0 - - 2 - - 2 - - 3 nA
. lsy = 15yA - 3 5 - 5 7.5 - 5 IO
"tl,tt,,Bi,a,j' Current Its Isv = 150M - 20 35 - 24 35 - 30 50 nA
, Isy = 450pA - 60 90 - 70 100 - 80 125
Input Voltage Range IVR Vs= :15V -15.0/13.5 - - -15.0/13.5 - - -15.0/13.5 - - V
01:32:; Roam: CMRR Vs = Le151/ 100 115 - 95 110 - 85 100 dB
, -15VsVcMs+13.5v
(Note 2)
Power Supply VS = _+1.5V to t15V;
Rejection Ratio PSRR and V- = OV, - 1 6 - 3 12 - 1O 25 pV/V
(Note 2) V+ = 3V to 30V.
Lar e Si nal Vs-- _+15V,
VOL t',''2,l,',, Avo Rt. = 100m, ' = 1511A 1000 2000 - 750 1500 - 500 1000 - V/mV
g RL = 101m, 150m s Isy s 450%
Vs = tISV
RL --100kn, lsy --15YA :0.8 :0.88 - t0.8 t0.88 - t0.75 t0.85 - V
Output Voltage V BL =10kn, 150PA S 'sYS 450pA
Swing Vs :15v
RL=1OOkn, ISV=15pA t14 :142 - _+14 :142 - :13.8 _+14.2 - V
RL =10k!),150pA S IsyS 450yA
Gain-Bandwidth Isy = 1514A, RL --100kn - 100 - - 100 - - 100 - kHz
Product Isy = 450PA, RL = 10ktt - 4500 - - 4500 - - 4500 -
Vs = t15V, Isy = 450PA,
- 1.5 - - 1.5 - - . -
Slew Rate SR RL=10kf2 1 5 V/us
Vs=t15V, 153: IPA - 15 17 - 15 19 - 15 21
ISET = 10pA - 150 170 - 150 190 - 150 200 pA
Supply Current - - -
No Loa d ' ISET - 30uA 450 525 450 600 - 450 650
(Note 31 V5=:1.5V. ISET=1yA - 10.5 12.5 - 11 15 - 11 18
ISET=1OuA - 105 125 - 110 150 - 110 180 PA
ISET = 30PA - 350 400 - 350 450 - 350 500
NOTES;
1. IB and los are measured at VcM = o.
2, PSRR and CMRR measured with Vos unnulled and ISET held constant.
3. The supply current tlsy) is dependent on the set current ( 'seT) and supply
voltage as follows:
I V+ - v-
SY 210+ ( l ( 1
ISET 6
The range of lsy/ISET is approximately 10.5 to 15 over the specified
operating range of Vs = -tl.5V to Vs = ue15V.
ELECTRICAL CHARACTERISTICS at VS 2 i1.5V to A15V, 15uA s ls, s 450pA, -55"C Lt T, S +125°C, unless otherwise noted.
OP-32A
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Average Input Offset
II - . . °
Voltage Drif1(Note 1) chos Unnu ed 0 5 2 0 WV/ C
Input Offset Voltage Vos - 175 400 WV
InputOffsetCurrent los V0”: 0 - - 2 nA
Average Input Offset I
Current Drift TClos (Notes l, 2) - 1 10 plV C
. I = 15M - 3 5
I t B as C ent SY
'tCd',' 2) utr la Isv --150PA - 20 35 nA
ISY " 450M - so 90
Input Voltage Range IVR Vs = i15V -15.0/13,5 - - V
Common-Mode 1siiS'l/ S +13 5
Rejection Ratio CMRR C M .
(Note 3) ISET =10pA 90 110 - dB
|SET a 1M 80 90 -
Power Supply Vs " 11.5V10 115V &
Rejection Ratio PSRR V- " OV, - 2 10 INN
(Note 3) ltr-- 3V1030V(VCM= 1.5V)
V = t15V
. . s '
"eldtt in Avo RL " 100m, ISY = 15PA 200 400 - V/mV
" al RL=10kn.150pAslsysdsouA 500 1000 -
Vs = 11.5V
R =100kn l =15pA
L ' SY -
Output Voltage V RL =10kn, 150M s 'sv s 450M 10.65 i075 V
Swing vs " ll tN
R = mom I " 15M
L ' SY . 14. -
RL-10kQ,150uASISYs450uA AI3.6 1 o V
VS = A15V
lsET = 1p.A - 16 18
ISET=10|1A - 160 180 M
Supply Current ISET = GOpA - 450 550
No Load Is,
(Note 4) Vs = 11.5V
ISET = IgA - 12 14
ISET=1OPA - 120 140 "A
ISET -- 30M - 360 450
NOTES:
1. Sample tested.
2. Its and los are measured at Vco = 0. BURN-IN CIRCUIT"
3. PSRR and CMRH measured with Vos unnulled and Isa» held constant
4. The supplycurrent ( lsy) is dependent on the set current ( I39) and supply
voltage as follows: qav
ls, :10 + (V+) - (V-)
'ssr 6
OP-32 OUTPUT
'Other circuits may apply at ADI's discretion,
ELECTRICAL CHARACTERISTICS at Vs = i1.5V to i15V, 150A 5 lsyS 450PA, -25°C S TA S +85° C, unless
otherwise noted.
OP-32E OP-32F OP-32G
PARAMETER SYMBOL CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS
Average Input Offset .,
Voltage Drift (Note 1) chOS Unnulled 0.5 1.5 - 1.0 2.0 - 1.5 3.0 11w C
Input Offset Voltage Vos - 100 400 - 200 600 - 500 1200 uV
Input Offset Current los VCM = 0 - - 2 - - 2 - - 3 nA
Average Input Offset 0
Current Drift TClos (Notes1, 2) 2 10 - 3 15 - 5 25 pA/ C
. lsy = 15,.A - a 5 - 5 7.5 - 5 10
21:2": , Current IE I SY = 150M - 20 35 - 24 35 - 30 50 nA
lsr = 450yA - 60 90 - 70 100 - 80 125
Input Voltage Range IVR VS = t15V -15.0/13.5 - - -15.0/13.5 - - -15.0/13.5 - - V
Common-Mode
V = tl V
Rejection Ratio CMRR S 5 & 95 110 - 90 105 - BO 100 - a3
-15V s ch s +13.5v
(Note &
Power Supply Vs = tl.5V to i15V &
Rejection Ratio PSRR V- = ov, - 3.2 10 - 10 32 - 32 56 pV/V
(Note 3) V+=3Vto 30V
L r e Si nal Vs=i15V,
(2tl' egGain Avo RL = 100m. I SY = 15PA 750 1000 - 500 1000 - 400 1000 - V/mV
g RL = 10m, 150PA s lsvs 450PA 750 1000 - 500 1000 - 400 1000 -
Vs = :1.5v
Rc-- 100m. Isv= 15PA $0.70 10.75 - $0.65 &0.75 - t0.6 +0.7 - V
Output Voltage V BL: 10kn, 1500A S lsys 450uA
Swing Vs = , 15V
Rc=100kn,lsv=15PA $13.8 $14.1 - $13.6 $14.1 - :13.0 114.0 - V
RL=10kn,150ssAslsvs 450PA
Vs=i15V. ISET=1uA - 16 18 - 16 2O - 16 25
ISH=1OIJA - 160 180 - 160 200 - 160 250 PA
Supply Current _
No Load lsw 'SET - 30pA - 450 550 450 600 - 450 650
(Note 4) Vs=t1.5V, ISET=1pA - 12 14 - 12 17 - 12 25
ISET= 10pA - 120 140 - 120 170 - 120 200 uA
ISET = 30PA - 360 450 - 360 500 - 360 550
NOTES: 4. The supply current (tsv) is dependent on the set current (ISET) and supply
1 . Sample tested.
voltage as follows:
2. l, and losare measuredatVCM=0 lc, 40+ (V+)-(V-)
3. PSRR and CMRR measured with vos unnulled and ISET held constant. I - - 6 -
DICE CHARACTERISTICS
1 a 1 Pint . 1. BALANCE
' 2. INVERTING INPUT
. . 3. NONINVERTING INPUT
"il, 6 4. v-
5. BALANCE
6. OUTPUT
5 7. V+
.10 a '
2 q. tr,
DIE SIZE 0.070 X 0.050 inch, 3500 sq. mils
(1.78 X 1.27 mm, 2.26 sq. mm)
WAFER TEST LIMITS at VS = tl.5V to :15V, 15pA s ls, s 450yA, T, = 25°C, unless otherwise noted.
0P-32N 0P-3ZG OP-32GR
PARAMETER SYMBOL CONDITIONS LIMIT LIMIT LIMIT UNITS
Input Offset Voltage Vos 300 500 1000 wi/ MAX
Input Offset Current los VCM = 0 2 2 3 nA MAX
Input Bias Current I :SYi :ESAA 3: 2 I' A MAX
(Note 1) B SY - " 5 n
's, = 450WA 90 100 125
Input Voltage Range IVR Vs = :15V -15/13.5 -1 5/13.5 -15/13.5 V MIN
Common-Mode
T _ ' V = :15V
Helection Ratio CMRR 155v v 13 5V 100 95 85 dB MIN
(Note 2) s CM s
Power Supply
V = :1,5Vto:15V &
R T _ . P RH s
election Ratio S V- = 0V, V+ = 3V to 30V 6 12 25 gVN MAX
(Note 2)
V = :15V
Large-Signal S '
A R = 1 k9 = 1 A 1
Voltage Gain V0 L 00 As, 5w 000 750 500 V/mV MIN
L =10kn, 150M s is, s 450M 1000 750 500
Vs = tl.5V a
BL =100k9.|sv --15WA 20.8 2018 20.75 V MIN
Output Voltage V RL = 100m. 150M s 'sv s 450pA
Swing o
Vs = :15V
RL=100ki2,lsv=1SWA :14 :14 :118 VMIN
RL --10kr2,150WA ' ls, 5 450WA
Vs=:1.5V, [SET=1MA 12.5 15 18
I = 10 A 125 150 1 A MAX
Supply Current ISET - aouA 400 450 ll' "
No Load ISY SET - "
(Note 3) Vs=z15V, ISET=1uA 17 19 21
ISET =10p.A 170 190 200 WA MAX
ISET = 30WA 525 600 650
NOTES:
l, '3 and Ios are measured atVCM = o. 's_v IO (V+) - (V-)
2, PSRR and CMRR measured with V unnulled and ISET held constant. ISET = + 6
3. The supply current (isv) is dependent on the set current (ISET) and supply
voltage as follows:
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss. yield after packaging is not guaranteed for standard
product dice. Consult factory to negotiate specifications based on dice lot quaiiftcation through sample lot assembly and testing.
TYPICAL DC PERFORMANCE CHARACTERISTICS
OFFSET VOLTAGE
vs TEMPERATURE
Isy = 150 " 45mm 1/
TO tlSV/I
.wos [m
r,,,,-'''
5 we'"
/sv ' 151m
vs = tt.s TO t15V
~75 -50 -25
50 75 100 125
TEMPERATURE (°C)
OFFSET CURRENT (yA)
OFFSET CURRENT
vs TEMPERATURE
ISY =150uA
Vs = 21.5v TO new
-75 -50 -25 0 25 50 75 100125
TEMPERATURE (°c)
BIAS CURRENT (nA), 'SY = 15;.1A
BIAS CURRENT
IS, :15uA
Vs; :st TO tISV
-25 o 25 so 75
TEMPERATURE (°c)
" TEMPERATURE
BIAS CURRENT 1nA), 'SY : 1501111
