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OP275GP-OP275GS
Dual Bipolar/JFET, Audio Operational Amplifier
REV.A
Dual Bipolar/JFET, Audio
Operational Amplifier
PIN CONNECTIONS
8-Lead Narrow-Body SO8-Lead Epoxy DIP
(S Suffix)(P Suffix)Improved dc performance is also provided with bias and offset
currents greatly reduced over purely bipolar designs. Input off-
set voltage is guaranteed at 1 mV and is typically less than
200 mV. This allows the OP275 to be used in many dc coupled
or summing applications without the need for special selections
or the added noise of additional offset adjustment circuitry.
The output is capable of driving 600 W loads to 10 V rms while
maintaining low distortion. THD + Noise at 3 V rms is a low
0.0006%.
The OP275 is specified over the extended industrial (–40°C to
+85°C) temperature range. OP275s are available in both plastic
DIP and SOIC-8 packages. SOIC-8 packages are available in
2500 piece reels. Many audio amplifiers are not offered in
SOIC-8 surface mount packages for a variety of reasons; how-
ever, the OP275 was designed so that it would offer full perfor-
mance in surface mount packaging.
GENERAL DESCRIPTIONThe OP275 is the first amplifier to feature the Butler Amplifier
front-end. This new front-end design combines both bipolar
and JFET transistors to attain amplifiers with the accuracy and
low noise performance of bipolar transistors, and the speed and
sound quality of JFETs. Total Harmonic Distortion plus Noise
equals that of previous audio amplifiers, but at much lower sup-
ply currents.
A very low l/f corner of below 6 Hz maintains a flat noise density
response. Whether noise is measured at either 30 Hz or 1 kHz,
it is only 6 nV/√Hz. The JFET portion of the input stage gives
the OP275 its high slew rates to keep distortion low, even when
large output swings are required, and the 22 V/ms slew rate of
the OP275 is the fastest of any standard audio amplifier. Best of
all, this low noise and high speed are accomplished using less
than 5 mA of supply current, lower than any standard audio
amplifier.
*. Patent No. 5,101,126.
FEATURES
Excellent Sonic Characteristics
Low Noise: 6 nV/√Hz
Low Distortion: 0.0006%
High Slew Rate: 22 V/ms
Wide Bandwidth: 9 MHz
Low Supply Current: 5 mA
Low Offset Voltage: 1 mV
Low Offset Current: 2 nA
Unity Gain Stable
SOIC-8 Package
APPLICATIONS
High Performance Audio
Active Filters
Fast Amplifiers
Integrators
ELECTRICAL CHARACTERISTICSOUTPUT CHARACTERISTICS␣
Specifications subject to change without notice.
OP275–SPECIFICATIONS
(@ VS = 615.0 V, TA = +258C unless otherwise noted)
Input Bias Current
Common-Mode Rejection Ratio
Power Supply Rejection Ratio
Large Signal Voltage Gain
Output Voltage Range
NOTES
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard
product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
1Guaranteed by CMRR test.
Specifications subject to change without notice.
WAFER TEST LIMITS(@ VS = 615.0 V, TA = +258C unless otherwise noted)
ABSOLUTE MAXIMUM RATINGS1Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–22 V
Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–22 V
Differential Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . .–7.5 V
Output Short-Circuit Duration to GND3 . . . . . . . . .Indefinite
Storage Temperature Range
P, S Package . . . . . . . . . . . . . . . . . . . . . . . .–65°C to +150°C
Operating Temperature Range
OP275G . . . . . . . . . . . . . . . . . . . . . . . . . . . .–40°C to +85°C
Junction Temperature Range
P, S Package . . . . . . . . . . . . . . . . . . . . . . . .–65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) . . . . . . .+300°C
8-Pin Plastic DIP (P)
NOTESAbsolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.For supply voltages greater than –22 V, the absolute maximum input voltage is
equal to the supply voltage.Shorts to either supply may destroy the device. See data sheet for full details.qJA is specified for the worst case conditions, i.e., qJA is specified for device in socket
for cerdip, P-DIP, and LCC packages; qJA is specified for device soldered in circuit
board for SOIC package.
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the OP275 features proprietary ESD protection circuitry, permanent damage may
ORDERING GUIDE
DICE CHARACTERISTICSDie Size 0.070 · 0.108 in. (7,560 sq. mils)
Substrate is connected to V–
OP275–Typical Performance Curves
SUPPLY VOLTAGE – V
OUTPUT VOLTAGE SWING – V
–250–
5–
25–
10–
15–
20
–20Output Voltage Swing vs. Supply
Voltage
10k
PHASE – Degrees
GAIN – dBOpen-Loop Gain, Phase vs. Frequency
FREQUENCY – Hz
1001k10M10k100k1M
COMMON-MODE REJECTION – dBCommon-Mode Rejection vs.
Frequency
TEMPERATURE – °C
OPEN-LOOP GAIN – V/mV
250Open-Loop Gain vs. Temperature
FREQUENCY – Hz
CLOSED-LOOP GAIN – dB
–301k10k100M100k1M10M
–20Closed-Loop Gain vs. Frequency
FREQUENCY – Hz
100101001M1k10k100k
POWER SUPPLY REJECTION – dBPower Supply Rejection vs.
Frequency
Closed-Loop Gain and Phase, AV = +1
FREQUENCY – Hz
IMPEDANCE – 1001k10M10k100k1MClosed-Loop Output Impedance vs.
Frequency
Open-Loop Gain, Phase vs. Frequency
LOAD CAPACITANCE – pF
OVERSHOOT – %0100500200300400Small-Signal Overshoot vs. Load
Capacitance
SUPPLY VOLTAGE – V
SUPPLY CURRENT – mA
3.00–
5–
25–
10–
15
3.520Supply Current vs. Supply Voltage
FREQUENCY – Hz100100k1k
CURRENT NOISE DENSITY – pA/
Current Noise Density vs. Frequency
1001k10k
LOAD RESISTANCE – W
MAXIMUM OUTPUT SWING – VMaximum Output Voltage vs. Load
Resistance
TEMPERATURE – °C
ABSOLUTE OUTPUT CURRENT – mA
100Short Circuit Current vs. Temperature
TCVOS – µV/°C
UNITS
100TCVOS Distribution
TEMPERATURE – °C
GAIN BANDWIDTH PRODUCT – MHz–50–251000255075
PHASE MARGIN – DegreesGain Bandwidth Product, Phase
Margin vs. Temperature
FREQUENCY – Hz
MAXIMUM OUTPUT SWING – V1k10k10M100k1MMaximum Output Swing vs.
Frequency
TEMPERATURE – °C
INPUT BIAS CURRENT – nA
100Input Bias Current vs. Temperature
INPUT OFFSET VOLTAGE – µV
UNITS
120Input Offset (VOS) Distribution
SETTLING TIME – ns
STEP SIZE – V
–10100900200300400500600700800Settling Time vs. Step Size
CAPACITIVE LOAD – pF
SLEW RATE –
V/µs0100500200300400Negative Slew Rate
RL = 2 kW, VS = –15 V, AV = +1
Positive Slew Rate
RL = 2 kW, VS = –15 V, AV = +1
OP275–Typical Performance Curves
DIFFERENTIAL INPUT VOLTAGE – V.2.4.6.81.0
SLEW RATE – V/µsSlew Rate vs. Differential Input Voltage
TEMPERATURE – °C–50–251000255075Slew Rate vs. Temperature
