OP275 Fast Delivery |IC PHOENIX CO.,LIMITED

OP275 ,Dual Bipolar/JFET, Audio Operational Amplifierapplications without the need for special selectionssound quality of JFETs. Total Harmonic Distorti ..
OP275GP ,Dual Bipolar/JFET, Audio Operational AmplifierSpecifications subject to change without notice.–2– REV. AOP275WAFER TEST LIMITS(@ V = 615.0 V, T = ..
OP275GS ,Dual Bipolar/JFET, Audio Operational AmplifierSpecifications subject to change without notice.1ABSOLUTE MAXIMUM RATINGSORDERING GUIDESupply Volta ..
OP275GS-REEL , Dual Bipolar/JFET, Audio Operational Amplifier
OP279 ,Rail-to-Rail High Output Current Operational AmplifierSpecifications subject to change without notice.–2–REV. GOP179/OP279ABSOLUTE MAXIMUM RATINGS 2Packa ..
OP279GP ,Rail-to-Rail High Output Current Operational AmplifiersCHARACTERISTICS␣Offset VoltageV = 2.5 V –5mVOP179 VOS OUTOP279 V V = 2.5 V –4mVOS OUTInput Bias Cur ..
P3203AAL , SIDACtor Balanced Series - Modified TO-220
P3203AAL , SIDACtor Balanced Series - Modified TO-220
P3203ABL , SIDACtor® Protection Thyristors Baseband Protection (Voice-DS1)
P3203ABL , SIDACtor® Protection Thyristors Baseband Protection (Voice-DS1)
P3203ACL , SIDACtor® Protection Thyristors Baseband Protection (Voice-DS1)
P3203ACL , SIDACtor® Protection Thyristors Baseband Protection (Voice-DS1)

OP275
Dual Bipolar/JFET, Audio Operational Amplifier
REV.B
Dual Bipolar/JFET, Audio
Operational Amplifier
FEATURES
Excellent Sonic Characteristics
Low Noise: 6 nV/÷Hz
Low Distortion: 0.0006%
High Slew Rate: 22 V/�s
Wide Bandwidth: 9 MHz
Low Supply Current: 5 mA
Low Offset Voltage: 1 mV
Low Offset Current: 2 nA
Unity Gain Stable
SOIC-8 Package
APPLICATIONS
High Performance Audio
Active Filters
Fast Amplifiers
Integrators
PIN CONNECTIONS
GENERAL DESCRIPTION
The OP275 is the first amplifier to feature the Butler Amplifier
front-end. This new front-end design combines both bipolar
and JFET transistors to attain amplifiers with the accuracy and
low noise performance of bipolar transistors, and the speed and
sound quality of JFETs. Total Harmonic Distortion plus Noise
equals that of previous audio amplifiers, but at much lower
supply currents.
A very low l/f corner of below 6 Hz maintains a flat noise density
response. Whether noise is measured at either 30 Hz or 1 kHz,
it is only 6 nV/÷Hz. The JFET portion of the input stage gives
the OP275 its high slew rates to keep distortion low, even when
large output swings are required, and the 22 V/ms slew rate of the
OP275 is the fastest of any standard audio amplifier. Best of all,
this low noise and high speed are accomplished using less than
5 mA of supply current, lower than any standard audio amplifier.
Improved dc performance is also provided with bias and offset
currents greatly reduced over purely bipolar designs. Input
offset voltage is guaranteed at 1 mV and is typically less than
200 mV. This allows the OP275 to be used in many dc coupled
or summing applications without the need for special selections
or the added noise of additional offset adjustment circuitry.
The output is capable of driving 600 W loads to 10 V rms while
maintaining low distortion. THD + Noise at 3 V rms is a low
0.0006%.
The OP275 is specified over the extended industrial (–40∞C to
+85∞C) temperature range. OP275s are available in both plastic
DIP and SOIC-8 packages. SOIC-8 packages are available in
2500 piece reels. Many audio amplifiers are not offered in SOIC-8
surface mount packages for a variety of reasons; however, the
OP275 was designed so that it would offer full performance in
surface-mount packaging.
8-Lead Narrow-Body SOIC
(S Suffix)
8-Lead Epoxy DIP
(P Suffix)
*. Patent No. 5,101,126.
OP275
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Specifications subject to change without notice.
(@ VS = �15.0 V, TA = 25�C, unless otherwise noted.)
ABSOLUTE MAXIMUM RATINGS1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±22 V
Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±22 V
Differential Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . .±7.5 V
Output Short-Circuit Duration to GND3 . . . . . . . . .Indefinite
Storage Temperature Range
P, S Package . . . . . . . . . . . . . . . . . . . . . . . .–65∞C to +150∞C
Operating Temperature Range
OP275G . . . . . . . . . . . . . . . . . . . . . . . . . . . .–40∞C to +85∞C
Junction Temperature Range
P, S Package . . . . . . . . . . . . . . . . . . . . . . . .–65∞C to +150∞C
Lead Temperature Range (Soldering, 60 sec) . . . . . . . .300∞C
8-Lead Plastic DIP (P)
NOTES
1Absolute maximum ratings apply to packaged parts, unless otherwise noted.
2For supply voltages greater than ±22 V, the absolute maximum input voltage is
equal to the supply voltage.
3Shorts to either supply may destroy the device. See data sheet for full details.
4�JA is specified for the worst-case conditions, i.e., �JA is specified for device in
socket for cerdip, P-DIP, and LCC packages; �JA is specified for device sol-
dered in circuit board for SOIC package.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
OP275 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
ORDERING GUIDE
Model
OP275GP
OP275GS
OP275GSR
OP275–Typical Performance Characteristics
SUPPLY VOLTAGE – V
OUTPUT VOLTAGE SWING – V
–250�5�25�10�15�20
–20
TPC 1. Output Voltage Swing
vs. Supply Voltage
TPC 4. Open-Loop Gain,
Phase vs. Frequency
FREQUENCY – Hz
1001001k10M10k100k1M
COMMON-MODE REJECTION – dB
TPC 7. Common-Mode
Rejection vs. Frequency
TEMPERATURE – �C
OPEN-LOOP GAIN – V/mV
250
TPC 2. Open-Loop Gain vs.
Temperature
FREQUENCY – Hz
CLOSED-LOOP GAIN – dB
–301k10k100M100k1M10M
–20
TPC 5. Closed-Loop Gain vs.
Frequency
FREQUENCY – Hz
100101001M1k10k100k
POWER SUPPLY REJECTION – dB
TPC 8. Power Supply Rejection
vs. Frequency
TPC 3. Closed-Loop Gain
and Phase, AV = +1
FREQUENCY – Hz
IMPEDANCE – 1001k10M10k100k1M
TPC 6. Closed-Loop Output
Impedance vs. Frequency
FREQUENCY – Hz
–601k10k100M100k1M10M
PHASE – Degrees
OPEN-LOOP GAIN – dB
TPC 9. Open-Loop Gain,
Phase vs. Frequency
TEMPERATURE – �C
GAIN BANDWIDTH PRODUCT – MHz–50–251000255075
PHASE MARGIN – Degrees
TPC 10. Gain Bandwidth Product,
Phase Margin vs. Temperature
FREQUENCY – Hz
MAXIMUM OUTPUT SWING – V1k10k10M100k1M
TPC 13. Maximum Output
Swing vs. Frequency
TEMPERATURE – �C
INPUT BIAS CURRENT – nA
100
TPC 16. Input Bias Current
vs. Temperature
LOAD CAPACITANCE – pF
OVERSHOOT – %0100500200300400
TPC 11. Small-Signal Overshoot
vs. Load Capacitance
SUPPLY VOLTAGE – V
SUPPLY CURRENT – mA
3.00�5�25�10�15
3.5
�20
TPC 14. Supply Current vs.
Supply Voltage
TPC 17. Current Noise Density
vs. Frequency
TPC 12. Maximum Output
Voltage vs. Load Resistance
TEMPERATURE – �C
ABSOLUTE OUTPUT CURRENT – mA
100
TPC 15. Short Circuit Current
vs. Temperature
TCVOS – �V/�C
UNITS
100
TPC 18. TCVOS Distribution
OP275
INPUT OFFSET VOLTAGE – �V
UNITS
120
TPC 19. Input Offset (VOS)
Distribution
DIFFERENTIAL INPUT VOLTAGE – V01.0
SLEW RATE – V/
0.80.60.40.2
TPC 22. Slew Rate vs. Differential
Input Voltage
TPC 25. Positive Slew Rate
RL = 2 kW , VS = ±15 V, AV = +1
SETTLING TIME – ns
STEP SIZE – V
–10100900200300400500600700800
TPC 20. Step Size vs. Settling
Time
TEMPERATURE – �C
SLEW RATE – V/–50–251000255075
TPC 23. Slew Rate vs. Temperature
TPC 26. Small Signal Response
RL = 2 kW , VS = ±5 V, AV = +1
CAPACITIVE LOAD – pF
SLEW RATE – V0100500200300400
TPC 21. Slew Rate vs. Capacitive
Load
TPC 24. Negative Slew Rate
RL = 2 kW , VS = ±15 V, AV = +1
TPC 27. Voltage Noise Density
vs. Frequency VS = ±15 V

Partno	Mfg	Dc	Qty	Available	Descript
OP275	PMI	N/a	200	avai	Dual Bipolar/JFET, Audio Operational Amplifier