OP249AZ ,Dual, Precision JFET High Speed Operational AmplifierCHARACTERISTICS (@ V = 615 V, T = +258C, unless otherwise noted)S A OP249GParameter Sym ..
OP249FZ ,Dual, Precision JFET High Speed Operational AmplifierCHARACTERISTICS A grade unless otherwise noted)␣ OP249A OP249E OP249FParameter S ..
OP249GP ,Dual, Precision JFET High Speed Operational AmplifierGENERAL DESCRIPTIONchoice for high speed bipolar D/A and A/D converter applica-The OP249 is a high ..
OP249GS ,Dual, Precision JFET High Speed Operational AmplifierCHARACTERISTICSS A␣ OP249A OP249E OP249FParameter Symbol Conditions Min Typ Ma ..
OP260 ,DUAL / HIGH-SPEED / CURRENT FEEDBACK / OPERATIONAL AMPLIFIERGENERAL DESCRIPTION Continued
employs current feedback to provide consistently wideband opera-
..
OP260GS ,DUAL, HIGH-SPEED, CURRENT FEEDBACK, OPERATIONAL AMPLIFIERCHARACTERISTICS at VS a: A15V, l/cs, = 0V, R, " 2.5m, T, = +25"C, unless otherwise noted.
8-pin ..
P3100SBL , gas plasma arresters-package dimensions/specifications
P3100SBL , gas plasma arresters-package dimensions/specifications
P3100SB-L , gas plasma arresters-package dimensions/specifications
P3100SC , DO-214AA Package Symbolization
P3100SC , DO-214AA Package Symbolization
P3100SC , DO-214AA Package Symbolization
OP249AZ-OP249FZ-OP249GP
Dual, Precision JFET High Speed Operational Amplifier
REV.C
Dual, Precision
JFET High Speed Operational Amplifier
PIN CONNECTIONSFEATURES
Fast Slew Rate:␣22 V/ms typ
Settling Time (0.01%):␣1.2 ms max
Offset Voltage:␣300 mV max
High Open-Loop Gain:␣1000 V/mV min
Low Total Harmonic Distortion:␣0.002% typ
Improved Replacement for AD712, LT1057, OP215,
TL072 and MC34082
Available in Die Form
APPLICATIONS
Output Amplifier for Fast D/As
Signal Processing
Instrumentation Amplifiers
Fast Sample/Holds
Active Filters
Low Distortion Audio Amplifiers
Input Buffer for A/D Converters
Servo Controllers
GENERAL DESCRIPTIONThe OP249 is a high speed, precision dual JFET op amp, simi-
lar to the popular single op amp, the OP42. The OP249 outper-
forms available dual amplifiers by providing superior speed with
excellent dc performance. Ultrahigh open-loop gain (1 kV/mV
minimum), low offset voltage and superb gain linearity, makes
the OP249 the industry’s first true precision, dual high speed
amplifier.
With a slew rate of 22 V/ms typical, and a fast settling time of
less than 1.2 ms maximum to 0.01%, the OP249 is an ideal
choice for high speed bipolar D/A and A/D converter applica-
tions. The excellent dc performance of the OP249 allows the
full accuracy of high resolution CMOS D/As to be realized.
Symmetrical slew rate, even when driving large load, such as
600 W or 200 pF of capacitance, and ultralow distortion, make
the OP249 ideal for professional audio applications, active fil-
ters, high speed integrators, servo systems and buffer amplifiers.
The OP249 provides significant performance upgrades to the
TL072, AD712, OP215, MC34082 and the LT1057.
8-Lead Cerdip (Z Suffix),
8-Lead Plastic Mini-DIP
(P Suffix)
TO-99 (J Suffix)
8-Lead SO
(S Suffix)Figure 1.Fast Settling (0.01%)
0.00110k1001k20k Figure 2.Low Distortion AV = +1,
RL = 10 kW
20-Terminal LCC (RC Suffix)23V–
OUT B
OUT A
–IN A
+IN A
+IN BV+20121110NC
–IN B
NC = NO CONNECTFigure 3.Excellent Output Drive,
RL = 600 W
OP249–SPECIFICATIONS
ELECTRICAL CHARACTERISTICSNOTESLong-term offset voltage is guaranteed by a 1000 HR life test performed on three independent wafer lots at +125°C with LTPD of three.Guaranteed by CMR test.Settling time is sample tested.Guaranteed by design.
Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICS
(@ VS = 615 V, TA = +258C, unless otherwise noted)
(@ VS = 615 V, TA = +258C, unless otherwise noted)
OP249Voltage Noise
Voltage Noise Density
Current Noise Density
NOTESGuaranteed by CMR test.Guaranteed by design.
Specifications subject to change without notice.
ELECTRICAL CHARACTERISTICSInput Bias Current
Common-Mode Rejection
Short-Circuit Current Limit
NOTESTJ = +85°C for E/F Grades; TJ = +125°C for A Grade.
2Guaranteed by CMR test.
Specifications subject to change without notice.
(@ VS = 615 V, –408C £ TA £ +858C for E/F grades, and –558C £ TA £ +1258C for
A grade unless otherwise noted)
ELECTRICAL CHARACTERISTICSOffset Voltage Temperature
Input Bias Current
Output Voltage Swing
Short-Circuit Current Limit
(@ VS = 615 V, –408C £ TA £ +858C for unless otherwise noted)
OP249
ABSOLUTE MAXIMUM RATINGS1Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –18 V
Input Voltage2␣ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –18 V
Differential Input Voltage2␣ . . . . . . . . . . . . . . . . . . . . . . . 36 V
Output Short-Circuit Duration . . . . . . . . . . . . . . . .Indefinite
Storage Temperature Range . . . . . . . . . . . . –65°C to +175°C
Operating Temperature Range
OP249A (J, Z, RC) . . . . . . . . . . . . . . . . . . –55°C to +125°C
OP249E, F (J, Z) . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
OP249G (P, S) . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Junction Temperature
OP249 (J, Z, RC) . . . . . . . . . . . . . . . . . . . –65°C to +175°C
OP249 (P, S) . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) . . . . . . +300°C
ORDERING GUIDE1NOTESBurn-in is available on commercial and industrial temperature range parts in cerdip, plastic DIP, and TO-can packages.For devices processed in total compliance to MIL-STD-883, add/883 after part number. Consult factory for 883 data sheet.For availability and burn-in information on SO and PLCC packages, contact your local sales office.
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the OP249 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
NOTESAbsolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.For supply voltages less than –18 V, the absolute maximum input voltage is equal
to the supply voltage.qJA is specified for worst case mounting conditions, i.e., qJA is specified for device
in socket for TO, cerdip, P-DIP, and LCC packages; qJA is specified for device
soldered to printed circuit board for SO package.
DICE CHARACTERISTICS
WAFER TEST LIMITSOffset Voltage Temperature Coefficient
Output Voltage Swing
NOTESGuaranteed by CMR test.
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
(@ VS = 615 V, TJ = +258C unless otherwise noted)
OP249Figure 4.Open-Loop Gain, Phase vs.
Frequency
FREQUENCY – Hz
POWER SUPPLY REJECTION – dB
10k100k1M
10010Figure 7.Power Supply Rejection vs.
Frequency
CAPACITIVE LOAD – pF
SLEW RATE – V/100200300400500Figure 10.Slew Rate vs. Capacitive
Load
TEMPERATURE – 8C
PHASE MARGIN – –75
GAIN BANDWIDTH PRODUCT – MHzFigure 5.Gain Bandwidth Product,
Phase Margin vs. Temperature
TEMPERATURE – 8C
SLEW RATE – V/
–50–250255075100125Figure 8.Slew Rate vs. Temperature
SETTLING TIME – ns
OUTPUT STEP SIZE – Volts
–102004006008001000Figure 11.Settling Time vs. Step
Size
FREQUENCY – Hz
COMMON-MODE REJECTION – dB
10k100k1M10M
100Figure 6.Common-Mode Rejection
vs. Frequency
DIFFERENTIAL INPUT VOLTAGE – Volts
SLEW RATE – V/0.20.40.60.81.0Figure 9.Slew Rate vs. Differential
Input Voltage
FREQUENCY – Hz
10010010k
VOLTAGE NOISE DENSITY – nVFigure 12.Voltage Noise Density vs.
Frequency
–Typical Performance Characteristics
0.00110k20kFigure 13.Distortion vs. Frequency
0.01010k20kFigure 16.Distortion vs. Frequency
Figure 19.Low Frequency Noise
0.00110k20kFigure 14.Distortion vs. Frequency
0.01010k20kFigure 17.Distortion vs. Frequency
FREQUENCY – Hz
CLOSED-LOOP GAIN – dB
10k100k1M10M
100MFigure 20.Closed-Loop Gain vs.
Frequency
0.00110k20kFigure 15.Distortion vs. Frequency
0.01010k20kFigure 18.Distortion vs. Frequency
Figure 21.Closed-Loop Output
Impedance vs. Frequency
OP249
FREQUENCY – Hz
MAXIMUM OUTPUT SWING – Volts10k
100k1M10MFigure 22.Maximum Output Swing
vs. Frequency
SUPPLY VOLTAGE – Volts
OUTPUT VOLTGE SWING – Volts
–20610615620
–10Figure 25.Output Voltage Swing vs.
Supply Voltage
VOS – mV
UNITS
–1k
–800–200–40020006004008001k Figure 28.VOS Distribution
(J Package)
LOAD CAPACITANCE – pF
OVERSHOOT – %
100200300400500Figure 23.Small Overshoot vs. Load
Capacitance
TEMPERATURE – 8C
SUPPLY CURRENT – mA
–50–250255075100125Figure 26.Supply Current vs.
Temperature
VOS – mV
UNITS
–1k
–800–200–40020006004008001kFigure 29.VOS Distribution
(P Package)
LOAD RESISTANCE – V
MAXIMUM OUTPUT SWING – Volts14
10010kFigure 24.Maximum Output Voltage
vs. Load Resistance
SUPPLY VOLTAGE – Volts
SUPPLY CURRENT – mA
6.05101520Figure 27.Supply Current vs. Supply
Voltage
Figure 30.TCVOS Distribution
(J Package)
Figure 31.TCVOS Distribution
(P Package)
BIAS CURRENT – pA
COMMON-MODE VOLTAGE – Volts
104Figure 34.Bias Current vs.
Common-Mode Voltage
TEMPERATURE – 8C
OPEN-LOOP GAIN – V/mV
–50–250255075100125Figure 37.Open-Loop Gain vs.
Temperature
TIME AFTER POWER APPLIED – Minutes
OFFSET VOLTAGE – 24Figure 32.Offset Voltage Warm-Up
Drift
TIME AFTER POWER APPLIED – Minutes
INPUT BIAS CURRENT – pA0
610Figure 36.Bias Current Warm-Up
Drift
TEMPERATURE – 8C
SHORT-CIRCUIT OUTPUT CURRENT – mA
–50–250255075100125Figure 38.Short-Circuit Output
Current vs. Junction Temperature
Figure 33.Input Bias Current vs.
Temperature
TEMPERATURE – 8C
INPUT OFFSET CURRENT – pA
–50–250255075100125Figure 36.Input Offset Current vs.
Temperature