OP227AY ,DUAL, LOW-NOISE LOW OFFSET INSTRUMENTATION OPERATIONAL AMPLIFIERCHARACTERISTICS at Vs = i15V, TA = 25°C, unless otherwise noted.
OP-227A/E OP-227F OP-227G
PARA ..
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OP227GY ,Dual, Low Noise, Low Offset Instrumentation Operational Amplifiercharacteristics, coupled with a slew rate of 2.8 V/msamplifiers. DC stability is assured by a long- ..
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OP249 ,Dual, Precision JFET High Speed Operational AmplifierCHARACTERISTICS (@ V = 15 V, T = 25C, unless otherwise noted.)S A OP249GParameter Symb ..
P3100EAL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
P3100EBL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
P3100EBL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
P3100EBL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
P3100ECL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
P3100ECL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
OP227AY
DUAL, LOW-NOISE LOW OFFSET INSTRUMENTATION OPERATIONAL AMPLIFIER
ANALOG
DEVICES
Dual, Low-Noise Low-Offset
Instrumentation Operational Amplifier
OP-al
FEATURES
. Excellent lndlvldual Ampllller Parameters
. aw Vos ................................... GOMV Max
q Offset Voltage Match ....................... BOpV Max
. Ollset Voltage Match " Temperature ..... 1psW''C Max
. Stable Vos " Time ...................... 1pV/Mo Max
. Low Voltage Nolse ................. 3.9nV/x/ Hz Max
. Fast ..................................... 2.8Wps Typ
q High Galn ............................ " Million Typ
. High Channel Separation .................. 154dB Typ
ORDERING INFORMATION
TA = 25°C HERMETIC OPERATING
vos MAX DIP TEMPERATURE
bio 14-PIN RANGE
80 OP227AY' MIL
so OP227EY IND
120 OP227BY/883 MIL
120 OP227FY IND
180 OP227GY IND
. For devices processed in total compliance toMlL-STDBBa, add I883 alter part
number. Consult lactory for 883 data sheet.
Burn-ln is available on commercial and industrial temperature range parts in
CerDlP. plastic DIP, and Khan packages.
GENERAL DESCRIPTION
The OP-227 is the first dual amplifier to offer a combination of
low offset, low noise, high speed and guaranteed amplifier
matching characteristics in one device. The OP-227 with a
Vos match of 25pl/ typical, a TCVos match of 0.3pV/°C
typical, and a 1/f corner of only 2.7Hz is an excellent choice
When used in a th ree-op-amp instrumentation amplifier con-
figuration, the OP-227 can achieve a CMRR in excess of
100dB at 10kHz. In addition, this device has an open-loop
gain of 1.5M typical with a1kmoad. The OP-227 also features
an IB of i10nA typical, an los of 7nA typical. and guaranteed
matching of input currents between amplifiers. These out-
standing input current specifications are realized through the
use of a unique input Current-cancellation-circuit which
typically holds Irs and los to :ZOnA and 15nA respectively
over the full military temperature range.
Other sources of input-referred errors, such as PSRR and
CMRR, are reduced by factors in excess of 120dB for the
individual amplifiers. D.C. stability is assured by a long-term
drift specification of 1.0pV/month.
Matching between channels is provided on all critical para-
meters including offset voltage, tracking of offset voltage vs.
temperature, noninverting bias current, CMRR, and power
supply rejection ratio. This unique dual amplifier allows the
elimination of external components for offset nulling and
frequency compensation.
The OP-227 is pin compatible with the OP-10 and OP-207.
PIN CONNECTIONS
14-PIN CERAMIC DIP
(Y-Sufflx)
NOTES:,
1. Device may becperated evenil
insertion is reversed; this is
due to inherent symmetry of
pin locations of amplifiers A
and B.
E VHA)
NULL (A) (i: Eon (A)
AN (A) 'tsity-f,,..-,,']",'),'',' lA)
+IN (A) E J. " +IN IB)
Ha) E E-m in)
our IB) E Emu (B)
NULL (A) ,
for preclsion low noise designs. These D.C. characteristics, v. mE] gum tit) 2. WA) and V43) are internally
coupled with a slew rate of 2.8V/ps typical and a small-signal connected via substrate
bandwidth of 8MHa typical. allow the designer to achieve AC resistance.
performance previously unattainable with op-amp-based
instrumentation designs.
SIMPLIFIED SCHEMATIC (1/2 0P-227)
k , aw
as R3 R4 L, i) (I)
NULL 022
R23 R24 N _ 045
m- R2 N021
_ 023 i224 R9 020 019
OUTPUT
NON ERIZ .
INVERTING
INPUT tl A 01A T' (123 02A C3
Q N R5 H11 tr-, 045
v-cr-r-T/dr-ti;
:mzsrilr° ay-lh-'l Gtt t112 "Ca
027 028
- RI 5. R2 ARE PERMANENTLV ADJUSTED ) D
AT WAFER TEST FOR MINIMIM ON-
OFFSET VOLTAGE.
ABSOLUTE MAXIMUM RATINGS
Supply Voltage ............ . .................................................... t22V
Input Voltage (Note 1) .......................... . ........................... i22V
Output Short-Circuit Duration ..... . Indefinite
Differential Input Voltage (Note 2) .................... ..r.. ......... t0.7V
Differential Input Current (Note 2) ................................ A25mA
Storage Temperature Range ................... .... -65°C to +150°C
Operating Temperature Range
OP-227A, OP-227B ..... .. ............................ -55°C to +125°C
OP-227ET OP-227F. OP-227G ........ ... -25'C to +85°C
Lead Temperature (Soldering 60 sec) .... ....................... 300°C
PACKAGE TYPE N (Note 3) "s UNITS
14-Pln Hermetic DlP(Y) 108 16 'thw
NOTES:
l. For supply voltages less than t22V, the absolute maximum input voltage is
equal to the supply voltage.
2. The OP-227's inputs are protected by back-to-back diodes. Current limiting
resistors are not used in orderto achieve low noise. tt differential inputvoltage
exceeds 10.7V. the input current should be limited to 25mA.
3. 8A is specified tor worst case mounting conditions. "e, ls specified tor
device in socket for CerDlP package.
INDIVIDUAL AMPLIFIER CHARACTERISTICS at Vs = i 15V, TA = 25°C, unless otherwise noted.
OP-227A/E OP-227F OP-227G
PARAMETER SYMBOL CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS
Input Offset Voltage Vos (Note 1) - 20 80 - 40 120 - 60 180 0V
Long-Term Vos .
4 - J 1.0 - .3 1.5 - .4 .
Stability Vos/Time (Notes 2, l 0 0 0 2 0 pV/MO
Input Offset Currant los - 7 35 - 9 50 - 12 75 nA
Input Bias Current I5 - i10 :40 - A12 t55 - $15 $80 nA
. 0.1Hz to 10Hz
Input Noise Voltage en“, (Notes 3, 5) - 0.08 0.20 - 0.08 0.20 - 0.09 0.28 "Vp-p
In ut Noise to = 10Hz (Note 3) - 3.5 6.0 - 3.5 6.0 - 3.8 9.0
Vina e Densit en to = 30H21Note 3) - 3.1 4.7 - 3.1 4.7 - 3.3 5.9 nv/O Hz
g y to =1000HziNote 31 - 3.0 3.9 - 3.0 3.9 - 3.2 4.6
In ut Noise to =10Hz(Notes 3, 61 - 1.7 4.5 - 1.7 4.5 - 1.7 -
Cpurrent Densit in to = 30Hz tNotes 3, 6) - 1.0 2.5 - 1.0 2.5 - 1.0 - PA/V Hz
y fo =1000Hz (Notes 3, 6) - 0.4 0.7 - 0.4 0.7 - 0.4 0.7
Input Resistance -
. 6 - . 4 5 - . -
DitterentiaI-Mode Rm (Note 7) 1 3 0 9 0 7 4 Mn
input Resistance -
- 3 - - 2.5 - - 2 -
Common-Mode R'NCM Gn
Input Voltage Range NE :11.0 112.3 - :110 112.3 - i110 112.3 - V
Cothm0n-Mod0 CMRR VCM = i 11 V 114 126 - 106 123 - 100 120 - dB
Relectlon Ratio
Power Supply
. . . PSRR Vs = 14V to tlfN - 1 10 - 1 10 - 2 20 pV/V
Rejectton Ratio
Large-Signal A HL 2 2kn, V0 = :10V 1000 1800 - 1000 1800 - 700 1500 - V/mV
Voltage Gain vo RL 2 600n, V0 = :10V 800 1500 - 800 1500 - 600 1500 -
. RL22k0 i120 $13.8 - i120 i138 - 111.5 $13.5 -
Output Voltage Swing vo RL 2 600tt i 10.0 111.5 - i 10.0 :115 - t 10.0 111.5 - V
Slew Rate SR RL 2 2m (Note 4) 1.7 2.8 - 1.7 2.8 - 1.7 2.8 - V/ps
Gain Bandwidth Prod. GBW (Note 4) 5 8 - 5 8 - 5 B - MHz
Open-Loop Output _ -
Resistance Ro V0 - o, lo - 0 70 70 70 n
Power Consumption Pa Each Amplifier - 90 140 - 90 140 - 100 170 mW
tt et Ad st t
O s ju men Rp=10k0 - t4 - - t4 - - +4 - mV
NOTES:
I. Input offset voltage measurements are performed by automated test
equipment approxlmately 0.5 seconds after application of power.
A/E grade specifications are guaranteed fully warmed up.
2. Long-Term Input Offset Voltage Stability refers to the average trend line of
Vias vs. Time over extended periods after the first 30 days of operatlon.
Excluding the initial hour of operation, changes in Vos during the first 30
days are typically 2.50V - refer to typical pertormartce curve.
Sample tested.
Parameter is guaranteed by design.
See test circuit and frequency response curve for 0.1 Hz to 10Hz tester.
See test circuit for current noise measurement.
Guaranteed by input bias current.
#9919.“
0P-227
INDIVIDUAL AMPLIFIER CHARACTERISTICS for Vs = :15V, --550 C 5 TA S +125°C, unless otherwise noted.
_ OP-227A
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Input Oftset Voltage Vos (Note 1) - 60 180 uV
Average Input TCVos
Offset Drift chosn tNotes a, 3) - 0.3 to tN/''C
Input Offset Current los - 15 50 nA
Input gigs Currant I3 - :20 :60 nA
Input Voltage Range IVR :10.0 :11.5 - V
Common-Mode
Rejection Ratio CMRR ch - t10V 108 122 - dB
PowerSupply PSRR v =uF4 5Vt -+-18V - 2 16
Rejection Ratlo s _ - . o - tNN
Largs-Signal _
Voltage Gain Avo RLZ 2en, V0 - :10V 600 1200 - v
Output Voltage Swing V0 8.; 2ktt , 11.5 :13.5 - V
INDIVIDUAL AMPLIFIER CHARACTERISTICS for Vs = :15V. -25°C s: TA S 85° C, unless otherwise noted.
OP-227E OP-227 F 0P-227G
PARAMETER SYMBOL CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS
Input Ottset Voltage Vos (Note 1) - 40 140 - 60 200 - 85 280 uv
Average Input TCVOS - o
Offset Drift chosn (Note 2) 0.5 1.0 0.4 1.5 - 0.5 1.8 pV/ C
Input Offset Current los - 10 50 - 14 55 - 20 135 nA
Input Bias Current IB - t14 :60 - t18 :95 - :25 :150 nA
Input Voltage Range NR :100 :11.8 - :10.0 :11.8 - :10.0 :11.8 - V
Common-Moda
Rejection Ratio CMRR vcu - d:10V 110 124 - 102 121 - 96 118 T dB
Power Supply - + + - -
Rejection Ratio PSRR VS - -4.5V to - 18V 2 15 2 16 2 32 wNN
Large-Signal
= + - - _
Voltage Gain Avo RLE 2m, Vo _10v 750 1500 700 1300 450 1000 V/mV
Output Voltage Swing Vo RL 2 2m tll. : 13.6 - :11.4 , 13.5 - :11.0 , 13.3 - V
MATCHING CHARACTERISTICS for Vs = :15V, TA = 25''C, unless otherwise noted.
OP-227A/E OP-22'IF OP-227G-
I PARAMETER SYMBOL CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS
5 Input Offset Voltage
Match avos - 25 80 - 35 150 - 55 300 pV
Average Noninverting - 'B+A+'B+B
Bias Current 15+ 'e+ - --t- - :10 t40 - :12 t55 - A15 :90 nA
". Nortlnverting offset
Current lose Ios+ = lts+A-lis+ts - Ali t60 - , 15 :80 - :20 :130 nA
Inverting Offset Current los- los---- IB-A-IB-B - _+12 t60 - :15 :80 - t20 t130 nA
Common-Mode
= + - - -
Rejection Ratio Match ACMRR VCM -11v 110 123 103 120 97 117 dB
Power Supply - + + -
Rejection Ratio Match APSRR Vs - +_4V to _18V 2 10 2 10 2 20 pV/V
Channel Separation CS (N0te1) 126 154 - 126 154 - 126 154 - dB
NOTES:
1. Input Offset Voltage measurements are performed by automated test 2. The TCVos performance is within the specifications unnullad or when
equipment approximately 0.5 seconds after application of power. nulled with RP = 8kn to 20kn, optimum performance is obtained with
Re = aka.
3. Sample tested.
0P-227
MATCHING CHARACTERISTICS for Vs = :15V, TA = -55'' C to +125° C, unless otherwise noted.
Rejection Ratio Match
NOTES:
1. Sample tested.
2. Guaranteed by design.
OP-227A
PARAMETER SYMBOL CONDIYIONS MIN TYP MAX UNITS
_ Input Offset Voltage
- 55 180
Match Avos yV
Input Offset Voltage Nulled or
- 0.3 1.0 V tp
Tracking TCAVos Unnulled (Note 2) u / C
Average Noninverting |B+A+I 5+9
+ + = ------ - r :
Bias Currant tis IB 2 20 60 nA
Average Drift of Non-
+ - 100 - Q
inverting Bias Current TCIB pA/ C
Noninverting onset
Current Ios+ los+ = tis+x-l ts+ts - t25 _+90 nA
Average Drift of Non-
+ - 130 - .
inverting Offset Current TCIOS pA/ C
Inverting Offset Current los- los- = IB-A-IB-B - :25 :90 nA
Common-Mode
= i10V 105 118 -
Rejection Ratio Match ACMRR VCM dB
Power Supply
V = A4. tl - 2 16 V
Rejection Ratio Match APSRR 8 5V to tht "W
MATCHING CHARACTERISTICS for Vs = i15V. TA = -25'C to +85° C, unless otherwise noted.
OP-227E OP-227F OP-227G
PARAMETER SYMBOL CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS
Input Offset Voltage
Match AVOS - 40 140 - 65 210 - 90 400 uV
Input Offset Voltage Nulled or
T AV - . 1.0 - .4 . - , . "
Tracking C OS Unnulled (Note1) O 3 O 1.5 0 5 1.8 pV/ C
Ar"" oninverting 13+ 13+ = !gt..Atrsieis - t14 ttio - t18 t95 - :25 i170 nA
Bias Current 2
Average Drift of Non-
+ - - - 140 - - - .
inverting Bias Current TCIB 80 180 pA/ C
Noninverting Offset
Current los+ los+ = 13+ A-lis+is - 1'20 t90 - t25 t140 - +35 fc250 nA
Average Drift of Non-
+ - - - - - - o
inverting Offset Current TCIOS 130 200 250 pA/ C
Inverting Offset Current los- I03 = IB-A-les-s - :20 190 - 125 i 140 - t35 1250 M
Common-Mode
= t10V 1 12 - 8 117 - -
Rejection Ratio Match ACMRR VW 06 0 9 90 112 dB
ower upp y APSRR Vs = 14.5Vto t18V - 2 15 - 2 16 - a 32 pV/V
0P-227
TYPICAL PERFORMANCE CHARACTERISTICS
VOLTAGE NOISE TEST CIRCUIT (0.1 Hz-TO-10Hzp.p)
BACK-TO-BACK
VOLTAGE NOISE an)
VOLTAGE GAIN -120
- 50,!!!)
BACK-TO-BACK
Wu" uur
VOLTAGE NOISE DENSITY COMPARISON OF OP-AMP
" FREQUENCY VOLTAGE NOISE SPECTRA
10 100
g 7 TA = 25°C
't 6 vs = 215v a"
a q 5 m CORNER
'd se LOW NOISE
w 3 g 10 AUDIO
g u; ll! CORNER op AMP
g m CORNER g 2.7He m CORNER
u: = 2.7Hz r-
o 2 .1 OP-IRT
INSTRUMENTATION AUDIO RANGE
RANGE TD DC TO 20qu
1 10 100 tk , 10 100 IR
Fneouancv (Hz) FREQUENCY (Hz)
TOTAL NOISE " VOLTAGE NOISE DENSITY
SOURCE RESISTANCE " TEMPERATURE
100 5 I V I
TA = 2S'tt R1 - vs = :15v
" = nsv " C2r-, Ti
"it > a
t; s. AT 10m
> I- /
u: g _,..-,.-,--''''''"
't 10 n 3 AT 1KHe
" 'ls' ---'"
nssmon NOISE ONLY 2
100 Tk 1m -tio -25 o 25 50 75 100 125
TEMPERATUR E t''m
SOURCE RESISTANCE (II)
LtllrrFREQUENCrfiSE -
fi SEC/DIV,
thtHe TO 10HE PEAK-TO-PEAK NOISE
NOTE: OBSERVATION TIME MUST BE LIMITED TO 10 SECONDS
TO ENSURE 0.1Hz CUTOFF.
INPUT WIDEBAND NOISE
" BANDWIDTH (0.1 Ha TO
FREQUENCY INDICATED)
TA = 25°C
VS I $151]
100 " 10k TOOK
BANDWIDTH (rel
CURRENT NOISE DENSITY
" FREQUENCY
ii', 1.0
III CORNER
= 140Hz
10 100 1k 10k
FREQUENCY IH
