OP220 ,Dual Micropower Operational AmplifierCHARACTERISTICSS A OP220A/E OP220F OP220C/GParameter Symbol ..
OP220CZ ,Dual Micropower Operational Amplifierspecifications oftheindividualamplifiers com-
bined with the tight matching and temperature tracki ..
OP220EZ ,Dual Micropower Operational AmplifierCHARACTERISTICS at Vs = =2.5V to tl 5V, -55°C s T, s +125°C for OP-220A and C. -25'C st T, s +85°C ..
OP220EZ ,Dual Micropower Operational AmplifierFEATURES
. Excellent TCVos Match .................. 2pV/° C Max
. Low Input Offset Voltage ...... ..
OP220FZ ,Dual Micropower Operational AmplifierFEATURES
. Excellent TCVos Match .................. 2pV/° C Max
. Low Input Offset Voltage ...... ..
OP220G ,Dual Micropower Operational Amplifierspecifications oftheindividualamplifiers com-
bined with the tight matching and temperature tracki ..
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OP220
Dual Micropower Operational Amplifier
REV.A
8-Lead Hermatic Dip
(Z-Suffix)
Dual Micropower
Operational AmplifierFigure 1.Simplified Schematic
FEATURES
Excellent TCVOS Match: 2 �V/�C Max
Low Input Offset Voltage: 150 �V Max
Low Supply Current: 100 �A
Single-Supply Operation: 5 V to 30 V
Low Input Offset Voltage Drift: 0.75 �V/�C Max
High Open-Loop Gain: 2,000 V/mV
High PSRR: 3 �V/V
Low Input Bias Current: 12 nA
Wide Common-Mode Voltage Range: V– to Within
1.5 V of V+
Pin Compatible with 1458, LM158, and LM2904
Available in Die Form
GENERAL DESCRIPTIONThe OP220 is a monolithic dual operational amplifier that can
be used either in single or dual supply operation. The low offset
voltage and input offset voltage tracking as low as 1.0 mV/∞C,
make this the first micropower precision dual operational amplifier.
The excellent specifications of the individual amplifiers com-
bined with the tight matching and temperature tracking between
channels provides high performance in instrumentation ampli-
fier designs. The individual amplifiers feature extremely low
input offset voltage, low offset voltage drift, low noise voltage,
and low bias current. They are fully compensated and protected.
Matching between channels is provided on all critical parameters
including input offset voltage, tracking of offset voltage versus
temperature, noninverting bias currents, and common-mode
rejection ratios.
PIN CONFIGURATIONS
8-Lead Plastic Dip
(P-Suffix)
8-Lead SOIC
(S-Suffix)
8-Lead TO-99
(J-Suffix)
OP220–SPECIFICATIONS*Sample tested.
ELECTRICAL CHARACTERISTICS(@ VS = �2.5 V to �15 V, TA = 25�C, unless otherwise noted.)
ELECTRICAL CHARACTERISTICS
(Vs = �2.5 V to �15 V, –55�C £ TA £ +125�C for OP220A/C, –25�C £ TA £ +85�C for OP220E/F,
–40�C £ TA £ +85�C for OP220G unless otherwise noted.)
OP220NOTESDCMRR is 20 log10 VCM/DCME, where VCM is the voltage applied to both noninverting inputs and DCME is the difference in common-mode input-referred error.
2DPSRR is Sample tested.
MATCHING CHARACTERISTICSNOTESSample tested.DCMRR is 20 log10 VCM/DCME, where VCM is the voltage applied to both noninverting inputs and DCME is the difference in common-mode input-referred error.DPSRR is
MATCHING CHARACTERISTICS
(Vs = �15 V, –55�
C £ TA £ +125�
C for OP220A/C, –25�
C £ TA £ +85�
C for OP220E/F,
–40�
C £ TA £ +85�
C for OP220G unless otherwise noted. Grades E, F are sample tested.)
(@ VS = �15 V, TA = 25�C, unless otherwise noted.)
TYPICAL ELECTRICAL CHARACTERISTICS(@ Vs = �15 V, TA = 25�C, unless otherwise noted.)
OP220–SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS*Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±18 V
Differential Input Voltage . . . . . . . . . .30 V or Supply Voltage
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .Supply Voltage
Output Short-Circuit Duration Indefinite
Storage Temperature Range . . . . . . . . . . . .–65∞C to +150∞C
Junction Temperature (Ti) . . . . . . . . . . . . .–65∞C to +150∞C
Operating Temperature Range
OP220A/OP220C . . . . . . . . . . . . . . . . . .–55∞C to +125∞C
OP220E/OP220F . . . . . . . . . . . . . . . . . . . .–25∞C to +85∞C
OP220G . . . . . . . . . . . . . . . . . . . . . . . . . . .–40∞C to +85∞C
Lead Temperature Range (Soldering, 60 sec) . . . . . . . .300∞C
NOTES
*Absolute Maximum Ratings apply to packaged parts, unless otherwise noted.
WAFER TEST LIMITSPower Supply
Supply Current
NOTE
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packing is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on die lot qualification through sample lot assembly and testing.
(@ VS = �2.5 V, to �15 V, TA = 25�C, unless otherwise noted.)*�JA is specified for worst-case mounting conditions, i.e., �JA is specified for device
in socket for CERDIP and PDIP packages; �JA is specified for device soldered to
printed circuit board for SO packages.
DIE CHARACTERISTICS
DIE SIZE 0.097 INCH � 0.063 INCH, 6111 SQ. MILS(2.464 mm � 1.600 mm, 3.94 SQ. mm)
NOTE : ALL V+ PADS ARE INTERNALL CONNECTEDINVERTING INPUT (A)NONINVERTING INPUT (A)BALANCE (A)4.V–BALANCE (B)NONINVERTING INPUT (B)INVERTING INPUT (B)8.BALANCE (B)V+
10.OUT (B)
11.V+12.OUT (A)
13.V+
14.BALANCE (A)
ORDERING GUIDE
VOS MAX
(mV)For military processed devices, please refer to the Mil Standard
Data Sheet
OP220AJ/883*.
*Not for new design. Obsolete April 2002.
TPC 1.Normalized Offset Voltage vs. Temperature
TPC 2.Input Offset Voltage vs. Power Supply Voltage
TPC 3.Open-Loop Gain vs. Temperature
TPC 4.Input Bias Current vs. Temperature
TPC 5.Input Offset Current vs. Temperature
TPC 6.Supply Current vs. Supply Voltage
OP220TPC 7.CMRR vs. Frequency
TPC 8.PSRR vs. Frequency
TPC 9.Maximum Output Voltage vs. Load Resistance
TPC 10.Open-Loop Voltage Gain and Phase vs. Frequency
TPC 11.Maximum Output Swing vs. Frequency
TPC 12.Slew Rate vs. Temperature