OP215GS ,DUAL PRECISION JFET-INPUT OPERATIONAL AMPLIFIERFEATURES
. ngh Slew Rate .......................... 10Wys Min
. Put Settling Time ............... ..
OP215GS ,DUAL PRECISION JFET-INPUT OPERATIONAL AMPLIFIERGENERAL DESCRIPTION Continued
amplifiers. For additional precision /FET op amps, see the
OP-15/ ..
OP215GZ ,DUAL PRECISION JFET-INPUT OPERATIONAL AMPLIFIERCHARACTERISTICS at Vs = i15V, TA = 25''C, unless otherwise noted.
m---------------""-""-"-"-""'' ..
OP215GZ ,DUAL PRECISION JFET-INPUT OPERATIONAL AMPLIFIERfeatures
an input bias current of 18nA at 125°C ambient (notjunction)
temperature which greatly e ..
OP2177 ,Precision, Dual, Low Noise Low Input Bias Current Operational AmplifiersGENERAL DESCRIPTION14-Lead SOIC 14-Lead TSSOPThe OPx177 family consists of very high-precision, sin ..
OP2177AR ,Precision Low Noise, Low Input Bias Current Operational AmplifiersGENERAL DESCRIPTION14-Lead SOIC 14-Lead TSSOPThe OPx177 family consists of very high-precision, sin ..
P3002SBLRP , TwinChip™ Series DO-214 are very low capacitance SIDACtor® devices designed
P300A ,General Purpose Plastic Rectifier Forward Current 3.0A08-Feb-02 1P300A thru P300MVishay Semiconductorsformerly General SemiconductorRatings and Character ..
P300D ,GENERAL PURPOSE PLASTIC RECTIFIERFeatures• Plastic package has Underwriters Laboratories 1.0 (25.4)Flammability Classification 94V-0 ..
P300G ,GENERAL PURPOSE PLASTIC RECTIFIERThermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.Parameter Sy ..
P300J ,GENERAL PURPOSE PLASTIC RECTIFIERElectrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.Maximum i ..
P300M ,GENERAL PURPOSE PLASTIC RECTIFIERP300A thru P300MVishay Semiconductorsformerly General SemiconductorGeneral Purpose Plastic Rectifie ..
OP215BRC/883-OP215FZ-OP215GS-OP215GZ
DUAL PRECISION JFET-INPUT OPERATIONAL AMPLIFIER
ANALOG
IEVIICES
Dual Precision JFET-lnput
Operational Amplifier
0P-215
FEATURES
. High Slew Rate .......................... 10Wps Mln
. Fat Settling Time .................. 0.9psto 0.1% Typ
. Low Input onset Voltage Drlft ........... 10uV/°C Max
q Wlde Bandwidth ......................... 3.5MHz Mln
0 Temperature-compensated Input Blas Currents
. Guaranteed Input Blas Current ..... 18nA Max (125°C)
. Bias Current Spettlfled Warmed-Up Over Temperature
. Low Input Noise Current ........... 0.01pA/\/ Hz Wp
. High Common-Mode Rejection Rallo ........ 86dB Mln
. Pln Compatible With Standard Dual Plnouts
. 125°C Temperature Tested DICE
0 Models Wlth MIL-STD-883 Class B Processlng Avallable
. Available in Die Form
ORDERING INFORMATION t
TP2S'tt mouse OPERATING
Vamx canon PLASTIC Loc TEMPERATURE
(ttty) Tthat 84NN 8-PIN m-OON'I'ACT RANGE
10 OP21SM. 0P215AZ' - - MIL
no 0P21SEJ 0921522 OP215EP - COM
2.0 0P2158J/883 OP21SBZ/883 - OP21SBRO883 MIL
2.0 OP215FJ OP215FZ OP215FP - COM
49 OP21SCJ/883 OP21SCZ/883 - - Mn.
so - 0P21562 OP21SGP - XIND
6.0 - - 0P21ses - XIND
For dovbes processed In total compliance to MlL-STD-BBS. add I883 after part
number. Consult factory for 883 data sheet.
Burn-in isavallable on commercial and industrial temperaxure range pans in
CerDlP. plastic DIP, and TO-can packages.
GENERAL DESCRIPTION
The OP-215 offers the proven JFET-input performance ad-
vantages of high speed and low input bias current with the
SIMPLIFIED SCHEMATIC (1/2 OP-215)
tracking and convenience advantages of a dual op-amp
configuration,
Low input offset voltages, low input currents, and low drift are
featured in these high-speed amplifiers.
On-chipzener-zap trimming is used to achieve low Voswhile
a bias-current compensation scheme gives a low input bias
current at elevated temperatures. Thus the OP-215 features
an input bias current of 18nA at 125°C ambient (notjunction)
temperature which greatly extends the application useful-
ness of this device.
Applications include high-speed amplifiers for current output
DACs, active filters, sample-and-hold buffers, and photocell
PIN CONNECTIONS
OUTA1 TOUT B
ANA' It-m B
mu: s ON B
TO-99 LCC 20-CONTACT
(J-Suffix) (RC-Suffix)
*V+ A & V+ B INTERNALLY
w CONNECTED
-IN a E AN A
MN a El ouu
8-PIN CERDIP E "
(it-Suffix) Tsl oUTB
a-PIN PLASTIC DIP 8-PIN so
(P-Suffix) (S-Suffix)
O OUTPUT
v+<> - more:
05 J5 010 RP. M ARE ELECTRONICALLY ADJUSTED
'tit. RP ON CHIP FOR MINIMUM OFFSET VOLTAGE.
05 NULL J8 .n NULL
IBllW mm l
3-K gnu)
GENERAL DESCRIPTION Continued
amplifiers. For additional precision /FET op amps, see the
OP-15/16/17 data sheet.
ABSOLUTE MAXIMUM RATINGS (Note I)
Supply Voltage
OP-215A. OP-215B, OP-215E, OP-215F
(All DICE Except GR) ..................................................... :22V
OP-215C," OP-21SG (GR DICE Only) ............................ :18V
Operating Temperature Range
OP-215A, OP-215B, OP-215C .................. -55°C to +125°C
OP-215E, OP215F ........................................... tPC to + 70°C
OP-21SG ....................................................... -Aty'C to +85°C
Maximum Junction Temperature fr) ........................... +150°C
Differential Input Voltage
OP-215A. 0P-215B. (All DICE Except GR) ................. :40V
OP-215E, 0P-215F, (All DICE Except GR) .................. :40V
OP-215C, OP-21SG, (GR DICE Only) .......................... :30V
Input Voltage
0P-215A, OP-215B, (All DICE Except GR) ................. :20V
OP-215E, OP-215F, (All DICE Except GR) .................. :20V
OP-21SC. OP-21SG. (GR DICE Only) .......................... 1161/
(Unless otherwise specified, the absolute maximum nega-
tive input voltage is equal to one volt more positive than the
negative power supply voltage.)
Output Short-Circuit Duration ................................... Indefinite
Storage Temperature Range ........................ -65''C to +150°C
Lead Temperature (Soldering, 60 sec) .......................... 300°C
Junction Temperature (Tl) .............................. -65''C to +150°C
PACKAGE TYPE 'h (NOTE n h, UNITS
T099 (J) 145 " WW
8-Pin Hermetic DIP (Z) 134 12 “CM!
8-Pin Plastic DIP (P) 96 37 mm
20-Conlact LCC (RC) 88 33 °C/W
8-Pin 50(8) 150 41 "CAN
NOTES:
1. Absolute maximum ratings apply ttt boxh DICE and packaged parts, unless other-
wise noted.
2. p,, is spediied " worst case mounting conditions, i.e.. N is spedred for device
in socket for TO, CetDIP, P-DIP, and LCC pad(ages; 6" is spstified for device
soldered to printed circuit board for SO package.
ELECTRICAL CHARACTERISTICS at Vs = i15V. TA = 25'' C, unless otherwise noted.
OP-215A/E OP-2153/F OP-2150/G
mama SYMBOL CONDITIONS um TYP MAX MIN TYP MAX MIN TYP MAX UNITS
as = son - tht 1.0 - 0.0 2.0 - 2.0 4.0 7
Input Offset Voltage vos 'G' Grade _ - - _ - - - 2.5 6.0 mV
T = 25°C (Note 1) - a 50 - 3 50 - 3 100
Input Offset Current tos Device Operating - 5 100 - 5 100 - 5 200 PA
TI=25‘C(Note l) - AIS :100 - t15 t200 - :15 :300
Input Bltts Cummt h, Device Operating - " :300 - t18 :400 - :13 t600 PA
10pm Resistance Rm - 1012 - - - 1012 L" - - - Ttpa - I - n
Lnrge-Slgnal Voltage Ru 2 2ktt
A 1 500 - 75 220 - -
Gm vo vo = :10v 50 50 200 V/mV
Output Voltage v 11L: 10m _+12 :13 - t12 :13 - A12 _+13 - v
Swing o Ru= 2m All :127 - :11 :12.7 - tll :12.7 -
- 6.0 0.5 - 0.0 " - 7.0 10.0
Supp y Cumm SV 'G' 0mm - - - - - - - 7.0 12.0 mA
Slew Rate sn Am " +1 10 t8 - 7 5 18 - 5 15 - V/ps
1 Ba I h
Ga n ttdw ttt caw (Note 3) 3.6 " - a 5 s 7 - 3 o ti 4 - MHz
Product V
Cloud-Loop
= + - 13 - - 13 - - -
Bandwlttth CLBW Asex 1 12 MHz
to 0.01% - 2.3 - - 2.3 - - 2.4 -
Settling Time ts to 0.05% (Note 2) - 1.1 - - 1.1 - - 1.2 - us
to 0.10% - 0.9 - - 0.9 - - 1.0 -
' +102 +143 - +102 + 14.8 - + 10.1 +14.8 -
V0 R IVR
input Itaim anger -10.2 -M.5 - -10.2 -11.5 - -10.1 -11.5 - V
Common-Mode A, B, c Grade: 88 100 - 86 100 - 82 96 -
Rejection nano CMRR Vc" tIVR E, F, G Grades 82 100 - 82 100 - so 96 - dB
Power Supply vs = :10v to tttN - 10 51 - 10 80 - - -
'Meetlort Ratio PS R vs " tUN 10:15v - - - - - - - 18 100 "WV
Input Noise Voltage to = 100Hz - 20 - - 20 - - 20 -
Density th, to " 1000Hz - 15 - - 15 - - 15 - nv/x, HT
Input Noise Current to = 100Hz - 0.01 - - tr ttl - - 0 ttl -
Density n 10 = 1000142 - 0.01 - - 0.01 - - 0.01 - pAf Hz
Input Capacitance Cm - - T l - - - - _ 3 - - - 3 - pF
tP-Ill. 5
iiiiEfmuLcHaRAdizimimcs at VS = :15V, --55"C 5 TA s +125° C, unless otherwise noted.
7 OP-215A OP-2153 OP-2156
PARAMETER SYMBOL CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS
Input Offset Voltage Vos Rs = 500 - 0.5 2.0 - 1.5 3.0 - 3.0 6.0 mV
Average Input Offset
Voltlgo Drift
Without External Trim TCVos (Note 3) - 3 10 - 3 10 - 6 - V/°c
_ External Trim chcsn RP = 100m - 3 - - 3 - - 4 - ''
Input Offset Current Ti = +125''C - 0.8 8 - 0.8 8 - 1.0 12 nA
(Note 1) OS TA = +125°C. Device Operating - 1.2 14 - 1.2 14 - 1.5 22
Input Bias Current I T] = +125°C - 11.5 -10 - t 1.5 + 10 - i1.8 :15 nA
(Note 1) B TA = + 125''C, Device Operating - t2.2 + 18 - t2.2 t18 - $2.7 +28
m “mm! tt Ran a Mt +102 +14.6 - +10.2 +14.6 - +10.1 +14.6 - V
pu 9 tl -10,2 -11.3 - -10.2 -11.3 - -10.1 -11.3 -
Common-Mode
CMRR V " t. 82 97 - 82 97 - BO 93 -
Rejection Ratio GM Mt as
P Su I = i t - 10 100 - 15 100 - - -
ower pp y PSRR Its 10V to 16V ”v N
Rejection Ratio Vs = i10V to 115V - - - - - - - 23 126
Large-Signal RL 2 2en
30 110 - 30 110 - 25 100 -
Voltage Gain Avo lla = 110v V/mV
O ut Wlta
:3“ iN Ito an 10m 112 113 - 112 11a - 112 A13 - v
ELECTRICAL CHARACTERISTICS at Vs = :15V, 0°C s T, s +70°C for E/F Grades, -4ty'Cs TA s +85°C for G Grade, unless
otherwise noted.
OP-215E OP-215F OP-MSG
PARAMETER SYMBOL CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS
input Offset Voltage Vos Rs = son - 0.4 1.65 - 1.4 2.65 - 3.5 tho mV
Avemge Input Offset
Voltage Drift V
Without External Trim TtWos (Note 3) - 3 15 - 3 15 - s - NPC;
With Exterhal Trim roves" Re = 100m - a - - a - - 4 "
Input Offset Current I Tj = +70°c - 0.06 0.45 - 0.06 0.45 - 0.03 0.65 nA
Mom 11 os TA = +70''C, Device Operating - 0.08 0.80 - th08 0.80 - 0.10 1.2
Input Bias Current I Ti = +7tPC - 10.12 10.70 - 10.12 10.70 - 10.14 10.9 nA
INote l, B Ts = +7ty'C, Device Operating - 10.16 11.40 - 10.16 11.40 - 10.19 :18
- +102 +147 - +102 +141 - +10.1 +147 -
input AottatteRantte Mt -10.2 -11.4 - -1o.2 -11.4 - -10.1 -11.3 - V
ttorttttttttt-Mtttttt
- 80 98 - so 98 - 7 -
ammo" Rtttlo cuna Itco ANR 6 94 dB
Power Supply vs = 110v to 113v - 13 100 - 13 100 - - -
Rejection Ratlo PSRR vs = 110v1o 115v - - - - - - - 20 159 tNN
Large-Signal RI. it an
A 50 180 - 50 180 - 35 130 - w v
Voltage Gain 1fO vo " 110v m
om” Wm” vo Rc- 10m 112 113 - 112 113 - 112 113 - v
NOTES:
1. Input bias current is specified for two dmmnt conditions. The T, = 25''C
specification is with the junction at ambient temperature; the Devloe
Operating trptrclfication ls with the device operating in a warmed-up
condition at 25°C ambient. The warmed-up bias current value is corre-
lated to the junction temperature value via the curves of lava. T] and la vs.
TA. PMI has a bias current compensation circuit which glves improved
bias current and bias current over temperature vs. standard JFET Input op
amps. Its and tos are measured at Itch, " th
2. Settling time is defined here fora unltygain inverter connection using 2kn
resistors. It is the time required for the error voltage (the voltage at the
inverting Input pin on the amplifier) to settle to within aspecifiad percent of
its final value from the time a 10V step input is applied to the inverter. See
settling time test circuit.
3. Sample tested.
0P-215
DICE CHARACTERISTICS (125°C TESTED DICE AVAILABLE)
qmmgpn-n
. NULL(B)
. NONINVERTING INPUT(B)
. INVERTING mpuna)
ALL V+ PADS ARE INTERNALLY CONNECTED.
DIE SIZE 0.110 X 0.075 Inch, 8250 sq. mils
WN M 1.91 mm, 5.33 sq. mm)
. INVERTING INPUT (A)
. NONINVERTING INPUT (A)
NULL (A)
NULL (Bl
Vo (B)
Va (A)
NULL (A)
WAFER TEST LIMITS at Vs = i15V, TA-- 25''C for OP-215N, OP-215G and OP-215GR devices; TA= 125° C for OP-215NT and
OP-215GT devices, unless otherwise noted.
OP-215NT OP-215N OP-215GT OP-2156 OP-2156R
PARAMETER SYMBOL CONDITIONS LIMIT LIMIT LIMIT LIIIIT LIMIT UNITS
Input Offset Voltage Vos Rs= son 2 1 3 2 6 mV MAX
Input Bias Current la :18 - :18 - - nA MAX
Input Offset Current los 14 - 14 - -_- - 70A MAX
Large-Signal Vo = ttOV,
Voltage Gain Avo Rc-- 2110 30 150 30 75 50 V/mV MIN
Input Voltage Range IVR ttthit 110.2 110.2 , 10.2 :10.1 V MIN
Common-Mode
Rejection Ratlo CMRR vm, - NR 82 86 82 86 82 dB MIN
Power Supply Vs = $1010 t 16V 100 51 100 80 -
Relectlon Ratio PSRR Vs = 221010 ¢15v - - - - 100 INN MAX _
R =10kn -+12 t12 :12 112 t12
utput Voltage Swing Vo Rc-- 2ktt - All - tll tll V MIN
Supply Current I sr - 8.5 - 8.5 12.0 mA MAX
NOTES:
For 25''C characteristics of NT & GT devices, see N & G characteristics respectively.
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not
guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
TYPICAL ELECTRICAL CHARACTERISTICS at Vs = -+15V, TA = +25° C, unless otherwise noted.
OP-215NT OP-215N OP-2156T OP-2156 OP-2156F!
PARAMETER SYHBOL CONDITIONS TYPICAL TYPICAL TYPICAL TYPICAL TYPICAL UNITS
Average Input Unnulled
2 2 3 3 4 VP
Offset Voltage Drift TCVos n,= 100m " C
Average Input Nullod
. 0.5 1 1
9115131 Voltage Drift TCitos, Rss--- 100m 0 5 - 2 tNP C
Input Offset Current los 3 3 3 3 3 PA
Input Bias Current Its " +15 +15 :15 1-15 pA
Slew Rate SR AVCL = +1 17 17 16 16 1% w;
to 0.01 % 2.2 2.2 2.3 2.3 2.4
Settling Time ts to 0.05% 1.1 1.1 1.1 1.1 1.2 us
to 0.10% 0.9 0.9 0.9 0.9 1.0
Gain Bandwidth GBW 6.0 6.0 5.7 5.7 5.4 MHz
Product
CIosed-Loop -
Bandwidth CLBW AVCL - +1 14 14 13 13 12 MHz
Input Noise fo = 100Hz 20 20 20 20 20
Voltage Density an fo=1000Hz 15 15 15 15 15 nV/V HZ
Input Noise . to-- 100Hz
. 1 0.01 0.01 . 1 . 1 V
Current Density In to =1000Hz o o 0 0 O O PA/ Hz
Input Capacitance SIN, 3 3 3 3 3 p:
0P-215
TYPICAL PERFORMANCE CHARACTERISTICS
LARGE-SIGNAL SMALL-SIGNAL
TRANSIENT RESPONSE TRANSIENT RESPONSE
- , " _____
fat=71-.-ii-L-. -
CLOSED-LOOP
BANDWIDTH AND
PHASE SHIFT " FREQUENCY BANDWIDTH vs TEMPERATURE
18 90 " I
16 100 Vs=t15V
" PNASEMARGIN 66 tio "
- amomom VAmAnou FROM
12 '20 f, -'sv'cvsK'-2tNrs
" 130 e _ 20 'Ns,,
s 140 E g
g s 150 F, - " CLOSED-LOOP ---1
- w E BANDWIDTH AV = +1
E 4 160 g Q
' 2 170 E t 12 '
a GAIN BANDWIDTH _
o 1it0 g "s. PRODUCT
" 190 8 ' .
-4 zoo _
" v xnsv 4
-1o tt
Tht 10M 100M -50 -25 o 25 so 75 100 125
FREQUENCY (Hz) TEMPERATURE Cip
MAXIMUM OUTPUT SWING
trAFREt2UENCY SLEW RATE " TEMPERATURE
a {333: 60 35$
5 Av-+1
'si' Ci!
s a .0
g. m 20 POSIYIVE
tOM 100 125
-25 O 25 50 75
AMBIENT TEMPERATURE (°C)
100K 1M
FREQUENCY (Ht)
OUTPUT VOLTAGE SWING FROM 0V (VOLTSI
OPEN—LOOP VOLTAGE GAIN (dB!
COMMON-MODE REJECTION RATIO [118)
vs - nsv I
TA- 25°C
AV " -t
SETTLING TIME
,,,,,w''''
10mY/y 1mV
10nx\ 5mV 1anV
O 0.5 1.0 1.5 2.0 2.5
SE'ITLING TIME (tssl
OPEN-LOOP
FREQUENCY RESPONSE
vS-nsv
TA'25°C
1 10 100 1k TOk 100k 1M 10M 100M
FREQUENCY (Hz)
COMMON-MODE REJECTION
RATIO vs FREQUENCY
"N l " ,st
\ TA " 25°C
1 10 100 1k 10k 100k 1M 10M 100M
FREQUENCY (HID
