OP193ES ,Precision, Micropower Operational AmplifiersCHARACTERISTICSOutput Voltage Swing High V I = 1 mA +14.1 14.2 +14.1 14.2 VOH LI = 1 mA,L–40°C ≤ T ..
OP193ES ,Precision, Micropower Operational AmplifiersCHARACTERISTICSOffset Voltage V OP193 75 150 μVOSOP193, –40°C ≤ T ≤ +125°C 175 250 μVAOP293 100 250 ..
OP193FS ,Precision, Micropower Operational AmplifiersSpecifications subject to change without notice.–2– REV. AOP193/OP293/OP493(@ V = +5.0 V, V = 0.1 V ..
OP193FS-REEL ,Precision, Micropower Operational AmplifiersGENERAL DESCRIPTIONV+OUT A 1 8OP293–IN A OUT BThe OP193 family of single-supply operational amplifi ..
OP193FS-REEL7 ,Precision, Micropower Operational AmplifiersCHARACTERISTICSOffset Voltage V OP193 75 150 μVOSOP193, –40°C ≤ T ≤ +125°C 175 250 μVAOP293 100 250 ..
OP196GS ,Micropower, Rail-to-Rail Input and Output Operational AmplifiersSPECIFICATIONS (@ V = +5.0 V, V = +2.5 V, T = +258C unless otherwise noted)S CM AParameter Symbol C ..
P2N2222A ,Amplifier TransistorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
P2N2907AZL1 ,Transistor Silicon Plastic PNPELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)ACharacteristic Symbol Min ..
P2RF-08 , Slim and Space-saving Power Plug-in Relay
P3000AA61 , solid state crowbar devices
P3002CAL , gas plasma arresters-package dimensions/specifications
P3002CBL , gas plasma arresters-package dimensions/specifications
OP193ES-OP193FS-OP193FS-REEL-OP193FS-REEL7-OP293FS-OP293FS-REEL-OP493FP-OP493FS
Precision, Micropower Operational Amplifiers
PIN CONFIGURATIONSREV.A
Precision, Micropower
Operational Amplifiers
FEATURES
Operates from +1.7 V to 618 V
Low Supply Current: 15 mA/Amplifier
Low Offset Voltage: 75 mV
Outputs Sink and Source: 68 mA
No Phase Reversal
Single or Dual Supply Operation
High Open-Loop Gain: 600 V/mV
Unity-Gain Stable
APPLICATIONS
Digital Scales
Strain Gages
Portable Medical Equipment
Battery Powered Instrumentation
Temperature Transducer Amplifier
GENERAL DESCRIPTIONThe OP193 family of single-supply operational amplifiers fea-
tures a combination of high precision, low supply current and
the ability to operate at low voltages. For high performance in
single supply systems the input and output ranges include
ground, and the outputs swing from the negative rail to within
600 mV of the positive supply. For low voltage operation the
OP193 family can operate down to 1.7 volts or ±0.85 volts.
The combination of high accuracy and low power operation
make the OP193 family useful for battery powered equipment.
Its low current drain and low voltage operation allow it to con-
tinue performing long after other amplifiers have ceased func-
tioning either because of battery drain or headroom.
The OP193 family is specified for single +2 volt through dual
±15 volt operation over the HOT (–40°C to +125°C) tempera-
ture range. They are available in plastic DIPs, plus SOIC sur-
face mount packages.
*Patent pending.
14-Lead Epoxy DIP
(P Suffix)
16-Lead Wide Body SOL
8-Lead Epoxy DIP
(P Suffix)
8-Lead SO
(S Suffix)
8-Lead Epoxy DIP
(P Suffix)
8-Lead SO
(S Suffix)OUT A
–IN A
+IN A
OUT A
–IN A
+IN A
OUT B
–IN B
+IN B
ELECTRICAL SPECIFICATIONS
OP193/OP293/OP493–SPECIFICATIONS
(@ VS = 615.0 V, TA = +258C unless otherwise noted)
ELECTRICAL SPECIFICATIONSNOTESLong term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125°C, with an LTPD of 1.3.Offset voltage drift is the average of the –40°C to +25°C delta and the +25°C to +125°C delta.
(@ VS = +5.0 V, VCM = 0.1 V, TA = +258C unless otherwise noted)
OP193/OP293/OP493
OP193/OP293/OP493
ELECTRICAL SPECIFICATIONSNOTESLong term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125°C, with an LTPD of 1.3.Offset voltage drift is the average of the –40°C to +25°C delta and the +25°C to +125°C delta.
Specifications subject to change without notice.
(@ VS = +3.0 V, VCM = 0.1 V, TA = +258C unless otherwise noted)
ELECTRICAL SPECIFICATIONS
WAFER TEST LIMITSNOTES
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard
product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
1Guaranteed by CMRR test.
Specifications subject to change without notice.
(@ VS = +2.0 V, VCM = 0.1 V, TA = +258C unless otherwise noted)
OP193/OP293/OP493
(@ VS = +5.0 V, VCM = 0.1 V, VOUT = 2 V, TA = +258C unless otherwise noted)
OP193/OP293/OP493
ABSOLUTE MAXIMUM RATINGS1Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V
Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V
Differential Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . . ±18 V
Output Short-Circuit Duration to Gnd . . . . . . . . . . Indefinite
Storage Temperature Range
P, S Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Operating Temperature Range
OP193/OP293/OP493E, F . . . . . . . . . . . . –40°C to +125°C
Junction Temperature Range
P, S Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) . . . . . . . +300°C
NOTESAbsolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.For supply voltages less than ±18 V, the input voltage is limited to the supply
voltage.θJA is specified for the worst case conditions, i.e., θJA is specified for device in socket
for P-DIP, and θJA is specified for device soldered in circuit board for SOIC
package.
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
ORDERING GUIDE
DICE CHARACTERISTICSOP493 Die Size 0.106 × 0.143 Inch, 15,158 Sq. Mils Substrate
(Die Backside) Is Connected to V– Transistor Count, 215
OP193 Die Size 0.070 × 0.055 Inch, 3,850 Sq. Mils Substrate
(Die Backside) Is Connected to V– Transistor Count, 55
OP293 Die Size 0.072 × 0.110 Inch, 7,920 Sq. Mils Substrate
(Die Backside) Is Connected to V– Transistor Count, 105
TEMPERATURE – °C Figure 8.Slew Rate vs. Temperature
120–75 Figure 1.
VS = ±15 V
NUMBER OF AMPLIFIERS30
150 Figure 4.
VS = ±15 V
CMRR – dB Figure 7.CMRR vs. Frequency
NUMBER OF AMPLIFIERS301.0
TCVOS – µV/°C
150 Figure 3.OP193 TCVOS Distribution,
VS = +3 VPSRR vs. Frequency
Figure 9.Short Circuit Current vs.
Temperature
OP193/OP293/OP493–Typical Performance Characteristics125
0.1 1 10 100 1000 10000
DELTA FROM SUPPLY RAIL – mV
LOAD CURRENT – µA Figure 15.Delta Output Swing from
Either Rail vs. Current Load
GAIN – dB
10 100 1k 10k 100k
FREQUENCY – Hz Figure 18.Closed-Loop Gain vs.
Frequency, VS = 5 V
INPUT OFFSET CURRENT – nA
–0.25 Figure 10.
Temperature
FREQUENCY – Hz
VOLTAGE NOISE DENSITY – nV/
Hz Figure 13.Voltage Noise Density vs.
Frequency
VOLTAGE GAIN – V/mV
TEMPERATURE – °CFigure 16.Voltage Gain (RL = 100 kΩ)
vs. Temperature
100
Hz Figure 14.Current Noise Density vs.
Frequency
VOLTAGE GAIN – V/mV
TEMPERATURE – °C
1000 Figure 17.Voltage Gain (RL = 10 kΩ)
vs. Temperature
