NZT902 ,NZT902 NPN Low Saturation TransistorNZT902 NPN Low Saturation TransistorSeptember 2006NZT902tmNPN Low Saturation Transistor4• These de ..
NZT902 ,NZT902 NPN Low Saturation Transistorapplications involving pulsed or low duty cycle operations.Thermal Characteristics* T =25°C unless ..
NZX36C ,Single Zener diodesApplications General regulation functions1.4 Quick reference data Table 1. Quick reference dataT = ..
OAC5A , 5 VDC SOLID-STATE OPTO-ISOLATED I/O MODULES
OAC5A , 5 VDC SOLID-STATE OPTO-ISOLATED I/O MODULES
OAC5Q , AC Modules have High Current Thyristors with 100 Amp
P0300ECL , SIDACtor® Device
P0300ECL , SIDACtor® Device
P0300ECL , SIDACtor® Device
P0300SALRP , The series provides a surface mount solution that enables equipment to comply
P0300SALRP , The series provides a surface mount solution that enables equipment to comply
P0300SALRP , The series provides a surface mount solution that enables equipment to comply
NZT902
NZT902 NPN Low Saturation Transistor
NZT902 NPN Low Saturation Transistor September 2006 NZT902 tm NPN Low Saturation Transistor 4 • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage 90 V CEO V Collector-Base Voltage 120 V CBO V Emitter-Base Voltage 5 V EBO I Collector Current - Continuous 3 A C T Junction Temperature 150 °C J T Storage Temperature Range - 55 ~ +150 °C STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics* T =25°C unless otherwise noted a Units Symbol Parameter Value P Total Device Dissipation 1 W D R Thermal Resistance, Junction to Ambient 125 °C/W θJA * Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm. Electrical Characteristics* T = 25°C unless otherwise noted a Symbol Parameter Test Conditions Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I = 10mA CEO C 90 V BV Collector-Base Breakdown Voltage I = 100µA CBO C 120 V BV Emitter-Base Breakdown Voltage I = 100µA EBO E 5 V I Collector-Base Cutoff Current V = 100V CBO CB 100 nA V = 100V, Ta = 100 °C CB 10 uA I Emitter-Base Cutoff Current V = 4V EBO EB 100 nA h DC Current Gain I = 0.1A, V = 2V FE C CE 80 I = 1A, V = 2V C CE 80 I = 2A, V = 2V C CE 25 V Collector-Emitter Saturation Voltage I = 0.1A, I = 5.0mA CE(sat) C B 50 mV I = 1A, I = 100mA C B 250 mV I = 3A, I = 300mA 600 mV C B V Base-Emitter Saturation Voltage I = 1A, I = 100mA BE(sat) C B 1.25 V C Output Capacitance V = 10V, I = 0, f = 1MHz obo CB E 35 pF f Transition Frequency I = 100mA, V = 5V, f = 100MHz T C CE 75 MHz * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% ©2006 1 NZT902 Rev. B
