NZT753 ,PNP Power TransistorNZT753NZT753PNP Current Driver Transistor4 This device is designed for power amplifier, regulator ..
NZT753 ,PNP Power Transistorapplications involving pulsed or low duty cycle operations.
NZT753 ,PNP Power TransistorNZT753NZT753PNP Current Driver Transistor4 This device is designed for power amplifier, regulator ..
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NZT902 ,NZT902 NPN Low Saturation Transistorapplications involving pulsed or low duty cycle operations.Thermal Characteristics* T =25°C unless ..
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P0300EAL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
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P0300ECL , SIDACtor® Device
P0300ECL , SIDACtor® Device
P0300ECL , SIDACtor® Device
NZT753
PNP Power Transistor
NZT753 NZT753 PNP Current Driver Transistor 4 This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5P. 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* T =25°C unless otherwise noted A Symbol Parameter Value Units V Collector-Emitter Voltage - 100 V CEO V Collector-Base Voltage - 120 V CBO V Emitter-Base Voltage - 5.0 V EBO I Collector Current - Continuous - 4.0 A C T , T Operating and Storage Junction Temperature Range - 55 ~ +150 °C J STG *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted A Symbol Parameter Test Conditions Min. Max. Units Off Characteristics BV Collector-Emitter Breakdown Voltage I = -10mA, I = 0 -100 V CEO C B BV Collector-Base Breakdown Voltage I = -100μA, I = 0 -120 V CBO C E BV Emitter-Base Breakdown Voltage I = -100μA, I = 0 -5.0 V EBO E C I Collector-Base Cutoff Current V = -100V, I = 0 -0.1 μA CBO CB E T = 100°C -10 μA A I Emitter-Base Cutoff Current V = -4V, I = 0 -0.1 μA EBO EB C On Characteristics * h DC Current Gain V = -2.0V, I = -50mA 70 FE CE C V = -2.0V, I = -500mA 100 300 CE C V = -2.0V, I = -1.0A 55 CE C V (sat) Collector-Emitter Saturation Voltage I = -1.0A, I = -50mA -0.3 V CE C C V (sat) Base-Emitter Saturation Voltage I = -1.0A, I = -100mA -1.25 V BE C B V (on) Base-Emitter On Voltage V = -2.0V, I = -1.0A, -1.0 V BE CE C Small Signal Characteristics f Transition Frequency V = -5V, I = -100mA, f = 100MHz 75 MHz T CE C *Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% Thermal Characteristics * T =25°C unless otherwise noted A Symbol Parameter Max. Units P Total Device Dissipation 1.2 W D Derate above 25C 9.7 mW/°C R Thermal Resistance, Junction to Ambient 103 °C/W θJA 2 * Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min 6cm . ©2003 Rev. A, April 2003
