NZT751 ,PNP Current Driver TransistorNZT751Discrete POWER & SignalTechnologiesNZT751CECBSOT-223PNP Current Driver TransistorThis device ..
NZT753 ,PNP Power TransistorNZT753NZT753PNP Current Driver Transistor4 This device is designed for power amplifier, regulator ..
NZT753 ,PNP Power Transistorapplications involving pulsed or low duty cycle operations.
NZT753 ,PNP Power TransistorNZT753NZT753PNP Current Driver Transistor4 This device is designed for power amplifier, regulator ..
NZT902 ,NZT902 NPN Low Saturation TransistorNZT902 NPN Low Saturation TransistorSeptember 2006NZT902tmNPN Low Saturation Transistor4• These de ..
NZT902 ,NZT902 NPN Low Saturation Transistorapplications involving pulsed or low duty cycle operations.Thermal Characteristics* T =25°C unless ..
P0300EAL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
P0300EAL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
P0300EAL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
P0300ECL , SIDACtor® Device
P0300ECL , SIDACtor® Device
P0300ECL , SIDACtor® Device
NZT751
PNP Current Driver Transistor
NZT751 Discrete POWER & Signal Technologies NZT751 C E C B SOT-223 PNP Current Driver Transistor This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5P. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 60 V CEO V Collector-Base Voltage 80 V CBO VEBO Emitter-Base Voltage 5.0 V I Collector Current - Continuous 4.0 A C Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units *NZT751 P Total Device Dissipation 1.2 W D Derate above 25°C 9.7 mW/°C Rθ Thermal Resistance, Junction to Ambient 103 °C/W JA 2 *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm . 1997
