NZT749 ,PNP Current Driver TransistorNZT749NZT749PNP Current Driver Transistor4• This device is designed for power amplifier, regulator ..
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NZT753 ,PNP Power Transistorapplications involving pulsed or low duty cycle operations.
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P0300EAL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
P0300EAL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
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P0300ECL , SIDACtor® Device
P0300ECL , SIDACtor® Device
P0300ECL , SIDACtor® Device
NZT749
PNP Current Driver Transistor
NZT749 NZT749 PNP Current Driver Transistor 4 • This device is designed for power amplifier, regulator and switching circuit where speed is important. • Sourced from process 5P. 3 2 1 SOT-223 1. Base 2, 4. Collector 3. Emitter Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage -25 V CEO V Collector-Base Voltage -35 V CBO V Emitter-Base Voltage -5.0 V EBO I Collector Current (DC) - Continuous -4.0 A C T , T Operating and Storage Junction Temperature Range - 55 ~ 150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Voltage I = -10mA, I = 0 -25 V (BR)CEO C B V Collector-Base Voltage I = -100μA, I = 0 -35 V (BR)CBO C E V Emitter-Base Voltage I = -10μA, I = 0 -5.0 V (BR)EBO E C I Collector Cut-off Current V = -30V, I = 0 -100 nA CBO CB E I Emitter Cut-off Current V = -4V, I = 0 -0.1 μA EBO EB C On Characteristics * h DC Current Gain V = -2.0V, I = -50mA 70 FE CE C V = -2.0V, I = -1.0A 80 300 CE C V = -2.0V, I = -2.0A 65 CE C V Collector-Emitter Saturation Voltage I = -1.0A, I = -100mA -0.3 V CE(sat) C B V Base-Emitter Saturation Voltage I = -1.0A, I = -100mA -1.25 V BE(sat) C B V Base-Emitter On Voltage I = -1.0A, V = -2.0V -1.0 V BE(on) C CE Small Signal Characteristics f Current gain Bandwidth Product V = -5.0V, I = -50mA 75 MHz T CE C f = 100MHz * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% Thermal Characteristics T =25°C unless otherwise noted a Symbol Parameter Max. Units P Total Device Dissipation 1.2 W D Derate above 25°C 9.7 mW/°C R Thermal Resistance, Junction to Ambient 103 °C/W θJA ©2004 Rev. A, July 2004
