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P0300EAL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
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NZT6727
PNP General Purpose Amplifier
NZT6727 NZT6727 PNP General Purpose Amplifier 4 • This device is designed for general purpose medium power amplifiers and switches requiring collecor currents to 1.0A. • Sourced from process 77. 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage -40 V CEO V Collector-Base Voltage -50 V CBO V Emitter-Base Voltage -5.0 V EBO I Collector Current - Continuous -1.5 A C T , T Operating and Storage Junction Temperature Range - 55 ~ 150 °C J STG * These ratings are limiting values above whitch the serviceability of any semiconductor device may be impaird. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Sustaining Voltage * I = -10mA, I = 0 -40 V (BR)CEO C B V Collector-Base Breakdown Voltage I = -1.0mA, I = 0 -50 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = -100μA, I = 0 -5.0 V (BR)EBO E C I Collector Cutoff Current V = -50V, I = 0 -0.1 μA CBO CB E I Emitter Cut-off Current V = -5.0V, I = 0 -0.1 μA EBO EB C On Characteristics h DC Current Gain I = -10mA, V = -1.0V 55 FE C CE I = -100mA, V = -1.0 60 C CE I = -1.0A, V = -1.0V 50 250 C CE V (sat) Collector-Emitter Saturation Voltage I = -1.0A, I = -100mA -0.5 V CE C B V (on) Base-Emitter On Voltage I = -1.0A, V = -1.0V -1.2 V BE C CE Small Signal Characteristics h Small Signal current Gain I = -50mA, V = -10V, f = 20MHz 2.5 25 fe C CE C Collector-Base Capacitance V = -10V, I = 0, f = 1.0MHz 30 pF cb CB E * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.0% Thermal Characteristics T =25°C unless otherwise noted a Symbol Parameter Max. Units P Total Device Dissipation 1.0 W D Derate above 25°C 8.0 mW/°C R Thermal Resistance, Junction to Ambient 125 °C/W θJA 2 * Device mounted on FR-4PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm . ©2003 Rev. A, December 2003
