NZT6726 ,PNP General Purpose AmplifierTN6726A / NZT6726TN6726A NZT6726CECBTO-226CB SOT-223EPNP General Purpose AmplifierThis device is de ..
NZT6726 ,PNP General Purpose AmplifierTN6726A / NZT6726TN6726A NZT6726CECBTO-226CB SOT-223EPNP General Purpose AmplifierThis device is de ..
NZT6726 ,PNP General Purpose Amplifierapplications involving pulsed or low duty cycle operations.3) All voltages (V) and currents (A) are ..
NZT6726 ,PNP General Purpose Amplifierapplications involving pulsed or low duty cycle operations.3) All voltages (V) and currents (A) are ..
NZT6727 ,PNP General Purpose AmplifierNZT6727NZT6727PNP General Purpose Amplifier4• This device is designed for general purpose medium po ..
NZT6729 ,PNP General Purpose Amplifier
P0300EAL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
P0300EAL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
P0300EAL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
P0300ECL , SIDACtor® Device
P0300ECL , SIDACtor® Device
P0300ECL , SIDACtor® Device
NZT6726
PNP General Purpose Amplifier
TN6726A / NZT6726 TN6726A NZT6726 C E C B TO-226 C B SOT-223 E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 77. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 30 V CEO V Collector-Base Voltage 40 V CBO V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 1.5 A C Operating and Storage Junction Temperature Range -55 to +150 T , T °C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units TN6726A *NZT6726 P Total Device Dissipation 1.0 1.0 W D Derate above 25 C 8.0 8.0 mW/ C ° ° Thermal Resistance, Junction to Case 50 R °C/W θJC R Thermal Resistance, Junction to Ambient 125 125 C/W θ ° JA 2 *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm . 1997
