NZT660 ,PNP Low Saturation TransistorNZT660/NZT660ANZT660/NZT660APNP Low Saturation Transistor4• These devices are designed with high cu ..
NZT660A ,PNP Low Saturation TransistorNZT660/NZT660ANZT660/NZT660APNP Low Saturation Transistor4• These devices are designed with high cu ..
NZT660A_NL ,PNP Low Saturation TransistorNZT660/NZT660ANZT660/NZT660APNP Low Saturation Transistor4• These devices are designed with high cu ..
NZT6726 ,PNP General Purpose AmplifierTN6726A / NZT6726TN6726A NZT6726CECBTO-226CB SOT-223EPNP General Purpose AmplifierThis device is de ..
NZT6726 ,PNP General Purpose AmplifierTN6726A / NZT6726TN6726A NZT6726CECBTO-226CB SOT-223EPNP General Purpose AmplifierThis device is de ..
NZT6726 ,PNP General Purpose Amplifierapplications involving pulsed or low duty cycle operations.3) All voltages (V) and currents (A) are ..
P0300EAL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
P0300EAL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
P0300EAL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
P0300ECL , SIDACtor® Device
P0300ECL , SIDACtor® Device
P0300ECL , SIDACtor® Device
NZT660
PNP Low Saturation Transistor
NZT660/NZT660A NZT660/NZT660A PNP Low Saturation Transistor 4 • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* T =25°C unless otherwise noted A Symbol Parameter NZT660 NZT660A Units V Collector-Emitter Voltage 60 60 V CEO V Collector-Base Voltage 80 60 V CBO V Emitter-Base Voltage 5 5 V EBO I Collector Current - Continuous 3 3 A C T , T Operating and Storage Junction Temperature Range - 55 ~ +150 - 55 ~ +150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted A Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV Collector-Emitter Breakdown Voltage I = 10mA 60 V CEO C BV Collector-Base Breakdown Voltage I = 100μA NZT660 80 V CBO C NZT660A 60 V BV Emitter-Base Breakdown Voltage I = 100μA5 V EBO E I Collector-Base Cutoff Current V = 30V 100 nA CBO CB V = 30V, T = 100°C 10 μA CB A I Emitter-Base Cutoff Current V = 4V 100 nA EBO EB On Characteristics * h DC Current Gain I = 100mA, V = 2V 70 FE C CE I = 500mA, V = 2V NZT660 100 300 C CE NZT660A 250 550 I = 1A, V = 2V 80 C CE I = 3A, V = 2V 25 C CE V (sat) Collector-Emitter Saturation Voltage I = 1A, I = 100mA 300 mV CE C B I = 3A, I = 300mA NZT660 550 mV C B NZT660A 500 mV V (sat) Base-Emitter Saturation Voltage I = 1A, I = 100mA 1.25 V BE C B V (on) Base-Emitter On Voltage I = 1A, V = 2V 1 V BE C CE Small Signal Characteristics C Output Capacitance V = 10V, I = 0, f = 1MHz 45 pF obo CB E f Transition Frequency I = 100mA, V = 5V, f = 100MHz 75 MHz T C CE * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% ©2002 Rev. C1, June 2002
