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P0300EAL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
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P0300ECL , SIDACtor® Device
P0300ECL , SIDACtor® Device
P0300ECL , SIDACtor® Device
NZT651
NPN Current Driver Transistor
NZT651 Discrete POWER & Signal Technologies NZT651 C E C B SOT-223 NPN Current Driver Transistor This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 4P. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 60 V CEO VCBO Collector-Base Voltage 80 V V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 4.0 A C Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units *NZT651 PD Total Device Dissipation 1.2 W Derate above 25°C 9.7 mW/°C Thermal Resistance, Junction to Ambient 103 °C/W RθJA 2 *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm . 1997
