NZT605 ,NPN Darlington TransistorNZT605NZT605NPN Darlington Transistor4 This device designed for
NZT605 ,NPN Darlington Transistorapplications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage ..
NZT651 ,NPN Current Driver TransistorNZT651Discrete POWER & SignalTechnologiesNZT651CECBSOT-223NPN Current Driver TransistorThis device ..
NZT660 ,PNP Low Saturation TransistorNZT660/NZT660ANZT660/NZT660APNP Low Saturation Transistor4• These devices are designed with high cu ..
NZT660A ,PNP Low Saturation TransistorNZT660/NZT660ANZT660/NZT660APNP Low Saturation Transistor4• These devices are designed with high cu ..
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P0300EAL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
P0300EAL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
P0300EAL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
P0300ECL , SIDACtor® Device
P0300ECL , SIDACtor® Device
P0300ECL , SIDACtor® Device
NZT605
NPN Darlington Transistor
NZT605 NZT605 NPN Darlington Transistor 4 This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. Sourced from process 06. 3 2 1 SOT-223 1. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Emitter Voltage 110 V CEO V Collector-Base Voltage 140 V CBO V Emitter-Base Voltage 10 V EBO I Collector Current - Continuous 1.5 A C T , T Operating and Storage Junction Temperature Range - 55 ~ +150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are baseed on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Conditions Min. Max. Units Off Characteristics V Collector-Emitter Breakdown Voltage * I = 10mA, I = 0 110 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 100μA, I = 0 140 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 100μA, I = 0 10 V (BR)EBO E C I Collector Cutoff Current V = 120V, I = 0 10 nA CBO CB E I Collector Cutoff Current V = 120V, I = 0 10 nA CES CE E I Emitter Cutoff Current V = 8.0V, I = 0 100 nA EBO EB C On Characteristics * h DC Current Gain I = 50mA, V = 5.0V 2000 FE C CE I = 500mA, V = 5.0V 5000 C CE I = 1.0A, V = 5.0V 2000 100K C CE I = 2.0A, V = 5.0V 500 C CE V Collector-Emitter Saturation Voltage I = 250mA, I = 0.25mA 1 V CE(sat) C B I = 1.0A, I = 1.0mA 1.5 C B V Base-Emitter Saturation Voltage I = 1.0A, I = 1.0mA 1.8 V BE(sat) C B V Base-Emitter On Voltage I = 1.0A, V = 5.0V 1.7 V BE(on) C CE Small Signal Characteristics f Transition Frequency I = 100mA, V = 10V, f = 20MHz 150 MHz T C CE Thermal Characteristics T =25°C unless otherwise noted A Symbol Parameter Max. Units P Total Device Dissipation 1,000 mW D Derate above 25°C 8.0 mW/°C R Thermal Resistance, Junction to Ambient 125 °C/W θJA 2 * Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm ©2003 Rev. A, June 2003
