NZT560A ,NPN Low Saturation Transistorapplications involving pulsed or low duty cycle operations.
NZT560A ,NPN Low Saturation TransistorNZT560/NZT560ANZT560/NZT560ANPN Low Saturation Transistor4• These devices are designed with high cu ..
NZT560A ,NPN Low Saturation TransistorNZT560/NZT560ANZT560/NZT560ANPN Low Saturation Transistor4• These devices are designed with high cu ..
NZT605 ,NPN Darlington TransistorNZT605NZT605NPN Darlington Transistor4 This device designed for
NZT605 ,NPN Darlington Transistorapplications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage ..
NZT651 ,NPN Current Driver TransistorNZT651Discrete POWER & SignalTechnologiesNZT651CECBSOT-223NPN Current Driver TransistorThis device ..
P0300EAL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
P0300EAL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
P0300EAL , TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
P0300ECL , SIDACtor® Device
P0300ECL , SIDACtor® Device
P0300ECL , SIDACtor® Device
NZT560A
NPN Low Saturation Transistor
NZT560/NZT560A NZT560/NZT560A NPN Low Saturation Transistor 4 • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* T =25°C unless otherwise noted A Symbol Parameter NZT560/NZT560A Units V Collector-Emitter Voltage 60 V CEO V Collector-Base Voltage 80 V CBO V Emitter-Base Voltage 5 V EBO I Collector Current - Continuous 3 A C T , T Operating and Storage Junction Temperature Range - 55 ~ +150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted A Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV Collector-Emitter Breakdown Voltage I = 10mA 60 V CEO C BV Collector-Base Breakdown Voltage I = 100μA80 V CBO C V BV Emitter-Base Breakdown Voltage I = 100μA5 V EBO E I Collector Cutoff Current V = 30V 100 nA CBO CB V = 30V, T = 100°C 10 μA CB A I Emitter Cutoff Current V = 4V 100 nA EBO EB On Characteristics * h DC Current Gain I = 100mA, V = 2V 70 FE C CE I = 500mA, V = 2V NZT560 100 300 C CE NZT560A 250 550 I = 1A, V = 2V 80 C CE I = 3A, V = 2V 25 C CE V (sat) Collector-Emitter Saturation Voltage I = 1A, I = 100mA 300 mV CE C B I = 3A, I = 300mA NZT560 450 mV C B NZT560A 400 mV V (sat) Base-Emitter Saturation Voltage I = 1A, I = 100mA 1.25 V BE C B V (on) Base-Emitter On Voltage I = 1A, V = 2V 1 V BE C CE Small Signal Characteristics C Output Capacitance V = 10V, I = 0, f = 1MHz 30 pF obo CB E f Transition Frequency I = 100mA, V = 5V, f = 100MHz 75 MHz T C CE * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% ©2002 Rev. C1, June 2002
