NZD560A ,NPN Low Saturation TransistorNZD560ANZD560ANPN Low Saturation Transistor• These devices are designed for high current gain and l ..
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NZD560A
NPN Low Saturation Transistor
NZD560A NZD560A NPN Low Saturation Transistor • These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0A continuous. • Sourced from process NA. D-PAK 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * T =25°C unless otherwise noted A Symbol Parameter Value Units V Collector-Emitter Voltage 55 V CEO V Collector-Base Voltage 80 V CBO V Emitter-Base Voltage 5 V EBO I Collector Current - Continuous 3 A C T , T Operating and Storage Junction Temperature Range - 55 ~ +150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operation. Electrical Characteristics T =25°C unless otherwise noted A Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV Collector-Emitter Breakdown Voltage I = 10mA, I = 0 55 V CEO C B BV Emitter-Base Breakdown Voltage I = 100μA, I = 0 80 V CBO E E BV Collector-Base Breakdown Voltage I = 100μA, I = 0 5 V EBO E C I Collector-Base Cutoff Current V = 30V, I = 0 100 nA CBO CB E V = 30V, I = 0, T = 100°C 10 μA CB E A I Emitter-Base Cutoff Current V = 4V, I = 0 10 nA EBO EB C On Characteristics * h DC Current Gain I = 100mA, V = 2V 70 FE C CE I = 500mA, V = 2V 250 550 C CE I = 1A, V = 2V 80 C CE I = 3A, V = 2V 25 C CE I = 1A, V = 3V 200 C CE V (sat) Collector-Emitter Saturation Voltage I = 1A, I = 100mA 300 mV CE C B I = 2A, I = 200mA 400 mV C B I = 1A, I = 8mA 1.5 V C B V (sat) Base-Emitter Saturation Voltage I = 1A, I = 100mA 1.25 V BE C B I = 1A, I = 8mA 1 V C B V (on) Base-Emitter On Voltage I = 1A, V = 2V 1 V BE C CE Small Signal Characteristics C Output Capacitance V = 10V, I = 0, f = 1MHz 30 pF obo CB E f Transition Frequency I = 100mA, V = 5V, 75 MHz T C CE f = 100MHz * Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2.0% ©2002 Rev. B1, August 2002
