NX7002AKW Fast Delivery |IC PHOENIX CO.,LIMITED

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NX7002AKW
60 V, single N-channel Trench MOSFET
NX7002AKW
60 V, single N-channel Trench MOSFET11 July 2012 Product data sheet Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits Very fast switching• Trench MOSFET technology• ESD protected
1.3 Applications Relay driver• High-speed line driver• Low-side loadswitch• Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage - - 60 V
VGS gate-source voltage
Tj = 25 °C
-20 - 20 V drain current VGS = 10 V; Tamb = 25 °C [1] - - 170 mA
Static characteristics
RDSon drain-source on-stateresistance VGS = 10 V; ID = 100 mA; Tj = 25 °C - 3 4.5 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP Semiconductors NX7002AKW
60 V, single N-channel Trench MOSFET Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol G gate S source D drain 1 2
SC-70 (SOT323)
017aaa255 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
NX7002AKW SC-70 plastic surface-mounted package; 3 leads SOT323 Marking
Table 4. Marking codes
Type number Marking code
[1]
NX7002AKW AH%
[1] % = placeholder for manufacturing site code Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 60 V
VGS gate-source voltage
Tj = 25 °C
-20 20 V
VGS = 10 V; Tamb = 25 °C [1] - 170 mAID drain current
VGS = 10 V; Tamb = 100 °C [1] - 100 mA
IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 680 mA
[2] - 220 mWPtot total power dissipation Tamb = 25 °C
[1] - 255 mW
NXP Semiconductors NX7002AKW
60 V, single N-channel Trench MOSFET
Symbol Parameter Conditions Min Max Unit
Tsp = 25 °C - 1060 mW junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb = 25 °C [1] - 170 mA
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standardfootprint.(°C)-75 17512525 75-25
017aaa123
Pder(%)
Fig. 1. Normalized total power dissipation as a
function of junction temperature (°C)-75 17512525 75-25
017aaa124
Ider(%)
Fig. 2. Normalized continuous drain current as a
function of junction temperature
NXP Semiconductors NX7002AKW
60 V, single N-channel Trench MOSFET
017aaa482
VDS (V)10-1 102101
10-2(A)
Limit RDSon = VDS/ID
(1)
(2)
(3)(4)
(5)
(6)
IDM = single pulse
(1) tp = 100 µs
(2) tp = 1 ms
(3) tp = 10 ms
(4) DC; Tsp = 25 °C
(5) tp = 100 ms
(6) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage Thermal characteristics
Table 6. Thermal characteristics Max Unit 560 K/W 480 K/W 115 K/W2.
NXP Semiconductors NX7002AKW
60 V, single N-channel Trench MOSFET
017aaa483
Zth(j-a)(K/W)
10-110-5 1010-210-4 10210-1 tp (s)10-3 1031
duty cycle = 1
0.75 0.50.33 0.250.2 0.1
0.05 0.02
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa484
Zth(j-a)(K/W)
10-110-5 1010-210-4 10210-1 tp (s)10-3 1031
duty cycle = 1
0.75 0.50.33 0.250.2 0.1
0.05 0.02
FR4 PCB, mounting pad for drain 1 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values Characteristics Max Unit - V 2.1 V 1 µA 10 µA
NXP Semiconductors NX7002AKW
60 V, single N-channel Trench MOSFET
Symbol Parameter Conditions Min Typ Max Unit
VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 2 µA
VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 2 µA
VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 0.5 µA
VGS = -10 V; VDS = 0 V; Tj = 25 °C - - 0.5 µA
VGS = 5 V; VDS = 0 V; Tj = 25 °C - - 100 nA
IGSS gate leakage current
VGS = -5 V; VDS = 0 V; Tj = 25 °C - - 100 nA
VGS = 10 V; ID = 100 mA; Tj = 25 °C - 3 4.5 Ω
VGS = 10 V; ID = 100 mA; Tj = 150 °C - 6.2 9.2 Ω
RDSon drain-source on-stateresistance
VGS = 5 V; ID = 100 mA; Tj = 25 °C - 3.7 5.2 Ω
gfs forward
transconductance
VDS = 10 V; ID = 200 mA; Tj = 25 °C - 230 - mS
Dynamic characteristics
QG(tot) total gate charge - 0.33 0.43 nC
QGS gate-source charge - 0.12 - nC
QGD gate-drain charge
VDS = 30 V; ID = 200 mA; VGS = 4.5 V;
Tj = 25 °C 0.09 - nC
Ciss input capacitance - 11 17 pF
Coss output capacitance - 3.4 - pF
Crss reverse transfer
capacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C 1.4 - pF
td(on) turn-on delay time - 6 12 ns rise time - 7 - ns
td(off) turn-off delay time - 20 40 ns fall time
VDS = 40 V; RL = 250 Ω; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C 14 - ns
Source-drain diode
VSD source-drain voltage IS = 115 mA; VGS = 0 V; Tj = 25 °C 0.47 0.7 1.2 V
NXP Semiconductors NX7002AKW
60 V, single N-channel Trench MOSFET
VDS (V)0 431 2
017aaa469
0.20(A)V 5V
3.5V VGS=3V
2.5VV
Tj = 25 °C
Fig. 6. Output characteristics: drain current as a function of drain-source voltage; typical values
017aaa470
VGS (V)0 321-4
10-3(A)
(1) (2) (3)
Tj = 25 °C; VDS = 5 V
(1) minimum values(2) typical values
(3) maximum values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
017aaa471
RDSon(Ω)
2.5V 3.0V
3.5V
4.0V5.0V10V
VGS (V)0 1084 62
017aaa472
RDSon(Ω)
(1)
(2)
ID = 0.2 A
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig. 9. Drain-source on-state resistance as a functionof gate-source voltage; typical values

Partno	Mfg	Dc	Qty	Available	Descript
NX7002AKW	NXP/PH	N/a	10000	avai	60 V, single N-channel Trench MOSFET