NX7002AKS ,60 V, dual N-channel Trench MOSFETApplications Relay driver Low-side load switch High-speed line driver Switching circuits1.4 Qui ..
NX7002AKW ,60 V, single N-channel Trench MOSFETApplications• Relay driverHigh-speed line driver•• Low-side loadswitchSwitching circuits•1.4 Quick ..
NX7361JB-BC ,1310 nm InGaAsP MQW FP pulsed laser diode for OTDR application (150 mW min). With FC-UPC connector.FEATURES DESCRIPTIONNEC's NX7361JB-BC is a 1310 nm developed strained Mul-• HIGH OUTPUT POWER:tiple ..
NX8511UD ,1550 nm InGaAsP MQW-DFB TOSA for long haul 2.5 Gb/s applications.FEATURES• PEAK EMISSION WAVELENGTH: λp = 1 550 nm• OPTICAL OUTPUT POWER: Pf = 2.0 mW• WIDE OPERATIN ..
NXA025A0X-P , NaOSTM NXA025 SIP Non-isolated Power Modules
NY5W-K , Ultra slim type with 5 mm thickness, Low power consumption and high sensitivity
P0080SCL , gas plasma arresters-package dimensions/specifications
P0080SCL , gas plasma arresters-package dimensions/specifications
P0080SC-L , gas plasma arresters-package dimensions/specifications
P0080SCLRP , The series provides a surface mount solution that enables equipment to comply
P0080SCLRP , The series provides a surface mount solution that enables equipment to comply
P0080SCMCL , gas plasma arresters-package dimensions/specifications
NX7002AKS
60 V, dual N-channel Trench MOSFET
Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small
SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits Very fast switching Trench MOSFET technology ESD protection
1.3 Applications Relay driver High-speed line driver Low-side load switch Switching circuits
1.4 Quick reference data[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NX7002AKS
60 V, dual N-channel Trench MOSFET
Rev. 1 — 1 March 2012 Product data sheet
Table 1. Quick reference data
Per transistorVDS drain-source voltage Tj=25°C --60 V
VGS gate-source voltage -20 - 20 V drain current VGS =10V; Tamb =25°C [1] - - 170 mA
Static characteristicsRDSon drain-source on-state
resistance
VGS =10V; ID =100 mA; Tj =25°C - 3 4.5 Ω
NXP Semiconductors NX7002AKS
60 V, dual N-channel Trench MOSFET Pinning information Ordering information Marking[1] % = placeholder for manufacturing site code
Table 2. Pinning information
Table 3. Ordering informationNX7002AKS TSSOP6 plastic surface-mounted package; 6 leads SOT363
Table 4. Marking codesNX7002AKS TD%
NXP Semiconductors NX7002AKS
60 V, dual N-channel Trench MOSFET Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistorVDS drain-source voltage Tj =25°C - 60 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tamb =25°C [1] - 170 mA
VGS =10V; Tamb= 100°C [1] - 100 mA
IDM peak drain current Tamb=25 °C; single pulse; tp≤10µs - 680 mA
Ptot total power dissipation Tamb =25°C [2] - 220 mW
[1] - 255 mW
Tsp=25°C - 1060 mW
Source-drain diode source current Tamb =25°C [1] - 170 mA
Per devicePtot total power dissipation Tamb =25°C [2] - 330 mW junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
NXP Semiconductors NX7002AKS
60 V, dual N-channel Trench MOSFET Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Table 6. Thermal characteristics
Per transistorRth(j-a) thermal resistance
from junction to
ambient
in free air [1] - 500 560 K/W
[2] - 450 480 K/W
Rth(j-sp) thermal resistance
from junction to solder
point
--115 K/W
NXP Semiconductors NX7002AKS
60 V, dual N-channel Trench MOSFET
