NX7002AK Fast Delivery |IC PHOENIX CO.,LIMITED

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NX7002AK
60 V, single N-channel Trench MOSFET
SOT23 NX7002AK
60 V , single N-channel Trench MOSFET13 February 2013 Product data sheet General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology. Features and benefits Very fast switching• Trench MOSFET technology• ESD protected Applications Relay driver• High-speed line driver• Low-side loadswitch• Switching circuits Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage - - 60 V
VGS gate-source voltage
Tamb = 25 °C
-20 - 20 V
VGS = 10 V; Tsp = 25 °C - - 300 mAID drain current
VGS = 10 V; Tamb = 25 °C [1] - - 190 mA
Static characteristics
RDSon drain-source on-stateresistance VGS = 10 V; ID = 100 mA; Tj = 25 °C - 3 4.5 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP Semiconductors NX7002AK
60 V, single N-channel Trench MOSFET Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol G gate S source D drain 1 2
TO-236AB (SOT23)
017aaa255 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
NX7002AK TO-236AB plastic surface-mounted package; 3 leads SOT23 Marking
Table 4. Marking codes
Type number Marking code
[1]
NX7002AK %CM
[1] % = placeholder for manufacturing site code Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 60 V
VGS gate-source voltage
Tamb = 25 °C
-20 20 V
VGS = 10 V; Tsp = 25 °C - 300 mA
VGS = 10 V; Tamb = 25 °C [1] - 190 mA drain current
VGS = 10 V; Tamb = 100 °C [1] - 120 mA
IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 760 mA [2] - 265 mW
NXP Semiconductors NX7002AK
60 V, single N-channel Trench MOSFET
Symbol Parameter Conditions Min Max Unit
[1] - 325 mW
Tsp = 25 °C - 1330 mW junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb = 25 °C [1] - 190 mA
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standardfootprint.(°C)-75 17512525 75-25
017aaa123
Pder(%)
Fig. 1. Normalized total power dissipation as a
function of junction temperature (°C)-75 17512525 75-25
017aaa124
Ider(%)
Fig. 2. Normalized continuous drain current as a
function of junction temperature
NXP Semiconductors NX7002AK
60 V, single N-channel Trench MOSFET
017aaa466
VDS (V)10-1 102101
10-2(A)
Limit RDSon = VDS/ID
(1)
(2)
(3)
(4)(5)
(6)
IDM = single pulse
(1) tp = 100 µs
(2) tp = 1 ms
(3) tp = 10 ms
(4) DC; Tsp = 25 °C
(5) tp = 100 ms
(6) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage Thermal characteristics
Table 6. Thermal characteristics Max Unit 470 K/W 380 K/W 95 K/W2.
NXP Semiconductors NX7002AK
60 V, single N-channel Trench MOSFET
017aaa467
Zth(j-a)(K/W)
10-110-5 1010-210-4 10210-1 tp (s)10-3 1031
duty cycle = 1
0.75 0.50.33 0.250.2 0.1
0.05 0.02
0.01 0
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa468
Zth(j-a)(K/W)
10-110-5 1010-210-4 10210-1 tp (s)10-3 1031
duty cycle = 1
0.75 0.50.33 0.250.2 0.1
0.05 0.02
0.01 0
FR4 PCB, mounting pad for drain 1 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics Max Unit - V 2.1 V 1 µA 10 µA
NXP Semiconductors NX7002AK
60 V, single N-channel Trench MOSFET
Symbol Parameter Conditions Min Typ Max Unit
VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 2 µA
VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 2 µA
VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 0.5 µA
VGS = -10 V; VDS = 0 V; Tj = 25 °C - - 0.5 µA
VGS = 5 V; VDS = 0 V; Tj = 25 °C - - 100 nA
IGSS gate leakage current
VGS = -5 V; VDS = 0 V; Tj = 25 °C - - 100 nA
VGS = 10 V; ID = 100 mA; Tj = 25 °C - 3 4.5 Ω
VGS = 10 V; ID = 100 mA; Tj = 150 °C - 6.2 9.2 Ω
RDSon drain-source on-stateresistance
VGS = 5 V; ID = 100 mA; Tj = 25 °C - 3.7 5.2 Ω
gfs forward
transconductance
VDS = 10 V; ID = 200 mA; Tj = 25 °C - 230 - mS
Dynamic characteristics
QG(tot) total gate charge - 0.33 0.43 nC
QGS gate-source charge - 0.12 - nC
QGD gate-drain charge
VDS = 30 V; ID = 200 mA; VGS = 4.5 V;
Tj = 25 °C 0.09 - nC
Ciss input capacitance - 11 17 pF
Coss output capacitance - 3.4 - pF
Crss reverse transfer
capacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C 1.4 - pF
td(on) turn-on delay time - 6 12 ns rise time - 7 - ns
td(off) turn-off delay time - 20 40 ns fall time
VDS = 40 V; RL = 250 Ω; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C 14 - ns
Source-drain diode
VSD source-drain voltage IS = 115 mA; VGS = 0 V; Tj = 25 °C 0.47 0.7 1.2 V
NXP Semiconductors NX7002AK
60 V, single N-channel Trench MOSFET
VDS (V)0 431 2
017aaa469
0.20(A)V 5V
3.5V VGS=3V
2.5VV
Tj = 25 °C
Fig. 6. Output characteristics: drain current as a function of drain-source voltage; typical values
017aaa470
VGS (V)0 321-4
10-3(A)
(1) (2) (3)
Tj = 25 °C; VDS = 5 V
(1) minimum values(2) typical values
(3) maximum values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
017aaa471
RDSon(Ω)
2.5V 3.0V
3.5V
4.0V5.0V10V
VGS (V)0 1084 62
017aaa472
RDSon(Ω)
(1)
(2)
ID = 0.2 A
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig. 9. Drain-source on-state resistance as a functionof gate-source voltage; typical values
NXP Semiconductors NX7002AK
60 V, single N-channel Trench MOSFET
VGS (V)0 542 31
017aaa473
0.20(A)
(1)
(1)
(2)
(2)
VDS > ID × RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Tj (°C)-60 1801200 60
017aaa474
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typicalvalues
017aaa475
VGS(th)(V)
(1)
(2)
(3)
VDS (V)10-1 102101
017aaa476
102(pF)
(1)
(2)
(3)
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) Crss
Fig. 13. Input, output and reverse transfer capacitancesas a function of drain-source voltage; typical
values

Partno	Mfg	Dc	Qty	Available	Descript
NX7002AK	NXP/PH	N/a	10000	avai	60 V, single N-channel Trench MOSFET