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NX3L1T3157GM
Low-ohmic single-pole double-throw analog switch
1. General description
The NX3L1T3157 is a low-ohmic single-pole double-throw analog switch suitable for use
as an analog or digital 2:1 multiplexer/demultiplexer. It has a digital select input (S), two
independent inputs/outputs (Y0 and Y1) and a common input/output (Z).
Schmitt trigger action at the digital input makes the circuit tolerant to slower input rise and
fall times. Low threshold digital input allows this device to be driven by 1.8 V logic levels in
3.3 V applications without significant increase in supply current ICC. This makes it possible
for the NX3L1T3157 to switch 4.3 V signals with a 1.8 V digital controller, eliminating the
need for logic level translation. The NX3L1T3157 allows signals with amplitude up to VCC
to be transmitted from Z to Y0 or Y1, or from Y0 or Y1 to Z. Its low ON resistance (0.5 )
and flatness (0.13 ) ensures minimal attenuation and distortion of transmitted signals.
2. Features and benefits Wide supply voltage range from 1.4 V to 4.3V Very low ON resistance (peak): 1.6  (typical) at VCC =1.4V 1.0  (typical) at VCC =1.65V 0.55  (typical) at VCC =2.3V 0.50  (typical) at VCC =2.7V 0.50  (typical) at VCC =4.3V Break-before-make switching High noise immunity ESD protection: HBM JESD22-A114F Class 3A exceeds 7500V MM JESD22-A115-A exceeds 200V CDM AEC-Q100-011 revision B exceeds 1000V IEC61000-4-2 contact discharge exceeds 8000 V for switch ports CMOS low-power consumption Latch-up performance exceeds 100 mA per JESD78 Class II Level A 1.8 V control logic at VCC = 3.6 V Control input accepts voltages above supply voltage Very low supply current, even when input is below VCC High current handling capability (350 mA continuous current under 3.3 V supply) Specified from 40 C to +85 C and from 40 C to +125C
NX3L1T3157
Low-ohmic single-pole double-throw analog switch
Rev. 9 — 9 November 2011 Product data sheet
NXP Semiconductors NX3L1T3157
Low-ohmic single-pole double-throw analog switch
3. Applications Cell phone PDA Portable media player
4. Ordering information
5. Marking
[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.
6. Functional diagram
Table 1. Ordering information
NX3L1T3157GW 40 Cto +125C SC-88 plastic surface-mounted package; 6 leads SOT363
NX3L1T3157GM 40 C to +125C XSON6 plastic extremely thin small outline package; no leads;
6 terminals; body 1 1.45 0.5 mm
SOT886
Table 2. Marking codes[1]
NX3L1T3157GW MI
NX3L1T3157GM MI
NXP Semiconductors NX3L1T3157
Low-ohmic single-pole double-throw analog switch
7. Pinning information
7.1 Pinning
7.2 Pin description
8. Functional description
[1] H= HIGH voltage level; L= LOW voltage level.
Table 3. Pin description 1 independent input or output
GND 2 ground (0V) 3 independent input or output 4 common output or input
VCC 5 supply voltage 6 select input
Table 4. Function table[1]
LY0
HY1
NXP Semiconductors NX3L1T3157
Low-ohmic single-pole double-throw analog switch
9. Limiting values
[1] The minimum input voltage rating may be exceeded if the input current rating is observed.
[2] The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed but may not
exceed 4.6 V.
[3] For SC-88 package: above 87.5 C the value of Ptot derates linearly with 4.0 mW/K.
For XSON6 package: above 118 C the value of Ptot derates linearly with 7.8 mW/K.
10. Recommended operating conditions
[1] To avoid sinking GND current from terminal Z when switch current flows in terminal Yn, the voltage drop across the bidirectional switch
must not exceed 0.4 V. If the switch current flows into terminal Z, no GND current will flow from terminal Yn. In this case, there is no limit
for the voltage drop across the switch.
[2] Applies to control signal levels.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
VCC supply voltage 0.5 +4.6 V input voltage select input S [1] 0.5 +4.6 V
VSW switch voltage [2] 0.5 VCC + 0.5V
IIK input clamping current VI< 0.5V 50 - mA
ISK switch clamping current VI< 0.5 V or VI >VCC + 0.5 V - 50 mA
ISW switch current VSW> 0.5 V or VSW < VCC + 0.5 V;
sourceor sink current 350 mA
VSW> 0.5 V or VSW < VCC + 0.5 V;
pulsedat1ms duration, < 10 % duty cycle;
peak current 500 mA
Tstg storage temperature 65 +150 C
Ptot total power dissipation Tamb= 40 Cto +125C [3] -250 mW
Table 6. Recommended operating conditions
VCC supply voltage 1.4 4.3 V input voltage select input S 0 4.3 V
VSW switch voltage [1] 0VCC V
Tamb ambient temperature 40 +125 C
t/V input transition rise and fall rate VCC= 1.4Vto 4.3V [2]- 200 ns/V
NXP Semiconductors NX3L1T3157
Low-ohmic single-pole double-throw analog switch
11. Static characteristicsTable 7. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground 0V).
VIH HIGH-level
input voltage
VCC= 1.4Vto 1.6V 0.9 - - 0.9 - - V
VCC= 1.65 Vto 1.95V 0.9 - - 0.9 - - V
VCC= 2.3 Vto 2.7V 1.1 - - 1.1 - - V
VCC= 2.7 Vto 3.6V 1.3 - - 1.3 - - V
VCC= 3.6 Vto 4.3V 1.4 - - 1.4 - - V
VIL LOW-level
input voltage
VCC= 1.4Vto 1.6V - - 0.3 - 0.3 0.3 V
VCC= 1.65 Vto 1.95V - - 0.4 - 0.4 0.3 V
VCC= 2.3 Vto 2.7V - - 0.4 - 0.4 0.4 V
VCC= 2.7 Vto 3.6V - - 0.5 - 0.5 0.5 V
VCC= 3.6 Vto 4.3V - - 0.6 - 0.6 0.6 V input leakage
current
select input S; =GNDto 4.3V;
VCC= 1.4Vto 4.3V - - 0.5 1 A
IS(OFF) OFF-state
leakage
current
Y0 and Y1 port;
see Figure5
VCC= 1.4Vto 3.6V - - 5- 50 500 nA
VCC= 3.6Vto 4.3V - - 10 - 50 500 nA
IS(ON) ON-state
leakage
current
Z port; see Figure6
VCC= 1.4Vto 3.6V - - 5- 50 500 nA
VCC= 3.6Vto 4.3V - - 10 - 50 500 nA
ICC supply current VI =VCCor GND;
VSW =GNDor VCC
VCC= 3.6V - - 100 - 690 6000 nA
VCC= 4.3V - - 150 - 800 7000 nA
ICC additional
supply current
VSW =GNDor VCC= 2.6 V; VCC =4.3V - 2.0 4.0 - 7 7 A= 2.6 V; VCC= 3.6V - 0.35 0.7 - 1 1 A= 1.8 V; VCC= 4.3V - 7.0 10.0 - 15 15 A= 1.8 V; VCC =3.6V - 2.5 4.0 - 5 5 A= 1.8 V; VCC= 2.5V - 50 200 - 300 500 nA input
capacitance 1.0 --- - pF
CS(OFF) OFF-state
capacitance 35 --- - pF
CS(ON) ON-state
capacitance 130 --- - pF
NXP Semiconductors NX3L1T3157
Low-ohmic single-pole double-throw analog switch
11.1 Test circuits
NXP Semiconductors NX3L1T3157
Low-ohmic single-pole double-throw analog switch
11.2 ON resistance
[1] Typical values are measured at Tamb= 25 C.
[2] Measured at identical VCC, temperature and input voltage.
[3] Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical VCC and
temperature.
Table 8. ON resistance
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 8 to Figure 14.
RON(peak) ON resistance
(peak) =GNDto VCC;
ISW= 100 mA; see Figure7
VCC= 1.4V - 1.6 3.7 - 4.1 
VCC= 1.65V - 1.0 1.6 - 1.7 
VCC= 2.3V - 0.55 0.8 - 0.9 
VCC =2.7V - 0.5 0.75 - 0.9 
VCC =4.3V - 0.5 0.75 - 0.9 
RON ON resistance
mismatch
between
channels =GNDto VCC;
ISW =100 mA
[2]
VCC= 1.4V - 0.04 0.3 - 0.3 
VCC= 1.65V - 0.04 0.2 - 0.3 
VCC= 2.3V - 0.02 0.08 - 0.1 
VCC= 2.7V - 0.02 0.075 - 0.1 
VCC= 4.3V - 0.02 0.075 - 0.1 
RON(flat) ON resistance
(flatness) =GNDto VCC;
ISW =100 mA
[3]
VCC= 1.4V - 1.0 3.3 - 3.6 
VCC= 1.65V - 0.5 1.2 - 1.3 
VCC= 2.3V - 0.15 0.3 - 0.35 
VCC= 2.7V - 0.13 0.3 - 0.35 
VCC= 4.3V - 0.2 0.4 - 0.45 
NXP Semiconductors NX3L1T3157
Low-ohmic single-pole double-throw analog switch
11.3 ON resistance test circuit and graphs
NXP Semiconductors NX3L1T3157
Low-ohmic single-pole double-throw analog switch
NXP Semiconductors NX3L1T3157
Low-ohmic single-pole double-throw analog switch
12. Dynamic characteristics
Table 9. Dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground=0 V); for load circuit see Figure 17.
ten enable time S to Z or Yn;
see Figure 15
VCC= 1.4Vto 1.6V - 50 90 - 120 120 ns
VCC= 1.65Vto 1.95V - 36 70 - 80 90 ns
VCC= 2.3Vto 2.7V - 24 45 - 50 55 ns
VCC= 2.7V to 3.6V - 22 40 - 45 50 ns
VCC= 3.6V to 4.3V - 22 40 - 45 50 ns
tdis disable time S to Z or Yn;
see Figure15
VCC= 1.4Vto 1.6V - 32 70 - 80 90 ns
VCC= 1.65Vto 1.95V - 20 55 - 60 65 ns
VCC= 2.3Vto 2.7V - 12 25 - 30 35 ns
VCC= 2.7V to 3.6V - 10 20 - 25 30 ns
VCC= 3.6V to 4.3V - 10 20 - 25 30 ns
NXP Semiconductors NX3L1T3157
Low-ohmic single-pole double-throw analog switch
[1] Typical values are measured at Tamb= 25 C and VCC = 1.5 V, 1.8 V, 2.5 V, 3.3 V and 4.3 V respectively.
[2] Break-before-make guaranteed by design.
12.1 Waveform and test circuits
tb-m break-before-make
time
see Figure16 [2]
VCC= 1.4Vto 1.6V - 19 - 9 - - ns
VCC= 1.65Vto 1.95V - 17 - 7 - - ns
VCC= 2.3Vto 2.7V - 13 - 4 - - ns
VCC= 2.7V to 3.6V - 10 - 3 - - ns
VCC= 3.6V to 4.3V - 10 - 2 - - ns
Table 9. Dynamic characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground=0 V); for load circuit see Figure 17.
Table 10. Measurement points
1.4 V to 4.3V 0.5VCC 0.9VOH

Partno	Mfg	Dc	Qty	Available	Descript
NX3L1T3157GM	NXP	N/a	12171	avai	Low-ohmic single-pole double-throw analog switch