NX3020NAKW Fast Delivery |IC PHOENIX CO.,LIMITED

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NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
NX3020NAKW30 V , 180 mA N-channel Trench MOSFET29 October 2013 Product data sheet General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching• Trench MOSFET technology• ESD protection• Low threshold voltage Applications Relay driver• High-speed line driver• Low-side loadswitch• Switching circuits Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage - - 30 V
VGS gate-source voltage
Tj = 25 °C
-20 - 20 V drain current VGS = 10 V; Tamb = 25 °C [1] - - 180 mA
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 100 mA; Tj = 25 °C - 2.7 4.5 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP Semiconductors NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol G gate S source D drain 1 2
SC-70 (SOT323)
017aaa255 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
NX3020NAKW SC-70 plastic surface-mounted package; 3 leads SOT323 Marking
Table 4. Marking codes
Type number Marking code
[1]
NX3020NAKW %3A
[1] % = placeholder for manufacturing site code Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 30 V
VGS gate-source voltage
Tj = 25 °C
-20 20 V
VGS = 10 V; Tamb = 25 °C [1] - 180 mAID drain current
VGS = 10 V; Tamb = 100 °C [1] - 110 mA
IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 720 mA
[2] - 260 mWPtot total power dissipation Tamb = 25 °C
[1] - 300 mW
NXP Semiconductors NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
Symbol Parameter Conditions Min Max Unit
Tsp = 25 °C - 1100 mW junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb = 25 °C [1] - 180 mA
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standardfootprint.
Tamb(°C)-75 17512525 75-25
017aaa001
Pder(%)
Fig. 1. Normalized total power dissipation as a
function of ambient temperature
Tamb (°C)-75 17512525 75-25
017aaa002
Ider(%)
Fig. 2. Normalized continuous drain current as a
function of ambient temperature
NXP Semiconductors NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
017aaa682
VDS (V)10-1 102101
10-2(A)
tp = 100 µs
tp = 1 ms
tp = 10 ms
tp = 100 ms
Limit RDSon = VDS/ID
DC; Tsp = 25 °C
DC; Tamb = 25 °C; drain mounting pad 1 cm2
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - 415 480 K/WRth(j-a) thermal resistancefrom junction to
ambient
in free air
[2] - 350 400 K/W
Rth(j-sp) thermal resistance from junction to solder
point - 110 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP Semiconductors NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
017aaa683
tp (s)10-3 102 10310110-2 10-1
Zth(j-a)(K/W)
duty cycle = 1
0.33 0.25
0.2 0.1
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa684
tp (s)10-3 102 10310110-2 10-1
Zth(j-a)(K/W)
duty cycle = 1
0.33 0.25
0.2 0.1
FR4 PCB, mounting pad for drain 1 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics Max Unit - V 1.5 V 1 µA 10 µA
NXP Semiconductors NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
Symbol Parameter Conditions Min Typ Max Unit
VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 3.5 µA
VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 3.5 µA
VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 1 µA
VGS = -10 V; VDS = 0 V; Tj = 25 °C - - 1 µA
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 0.5 µA
IGSS gate leakage current
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - 0.5 µA
VGS = 10 V; ID = 100 mA; Tj = 25 °C - 2.7 4.5 Ω
VGS = 10 V; ID = 100 mA; Tj = 150 °C - 5.5 9.2 Ω
VGS = 4.5 V; ID = 100 mA; Tj = 25 °C - 3 5.2 Ω
RDSon drain-source on-stateresistance
VGS = 2.5 V; ID = 10 mA; Tj = 25 °C - 4 13 Ω
gfs forward
transconductance
VDS = 10 V; ID = 150 mA; Tj = 25 °C - 320 - S
Dynamic characteristics
QG(tot) total gate charge - 0.34 0.44 nC
QGS gate-source charge - 0.11 - nC
QGD gate-drain charge
VDS = 15 V; ID = 150 mA; VGS = 4.5 V;
Tj = 25 °C 0.06 - nC
Ciss input capacitance - 13 20 pF
Coss output capacitance - 2.6 - pF
Crss reverse transfer
capacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C 1.1 - pF
td(on) turn-on delay time - 5 10 ns rise time - 5 - ns
td(off) turn-off delay time - 34 68 ns fall time
VDS = 20 V; RL = 250 Ω; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C 17 - ns
Source-drain diode
VSD source-drain voltage IS = 115 mA; VGS = 0 V; Tj = 25 °C 0.47 0.7 1.2 V
NXP Semiconductors NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
VDS (V)0 431 2
017aaa663
0.5(A)V
4.5V
3.5V
VGS=2V
2.5VV
Tj = 25 °C
Fig. 6. Output characteristics: drain current as a function of drain-source voltage; typical values
017aaa664-4
10-3(A)
VGS (V)0 2.01.50.5 1.0
min typ max
Tj = 25 °C; VDS = 5 V
Fig. 7. Sub-threshold drain current as a function ofgate-source voltage
ID (A)0 0.50.40.2 0.30.1
017aaa665
RDSon(Ω)V 2.5V 3V
3.5V
4.5V
VGS=10V
Tj = 25 °C
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
VGS (V)0 1084 62
017aaa666
RDSon(Ω)=150°C=25°C
ID = 0.15 A
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
NXP Semiconductors NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
VGS (V)0 431 2
017aaa667
0.4(A)=150°C Tj=25°C
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values
Tj (°C)-60 1801200 60
017aaa668
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typicalvalues
017aaa669
VGS(th)(V)
max
typ
min
VDS (V)10-1 102101
017aaa670
102(pF)
Ciss
Coss
Crss
f = 1 MHz; VGS = 0 V
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typicalvalues

Partno	Mfg	Dc	Qty	Available	Descript
NX3020NAKW	NXP/PH	N/a	10000	avai	30 V, 180 mA N-channel Trench MOSFET