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NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
NX3020NAKS
30 V , 180 mA dual N-channel Trench MOSFET11 November 2013 Product data sheet General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology. Features and benefits Very fast switching• Trench MOSFET technology• ESD protection• Low threshold voltage Applications Relay driver• High-speed line driver• Low-side loadswitch• Switching circuits Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VDS drain-source voltage - - 30 V
VGS gate-source voltage
Tj = 25 °C
-20 - 20 V drain current VGS = 4.5 V; Tamb = 25 °C [1] - - 180 mA
Static characteristics (per transistor)
RDSon drain-source on-stateresistance VGS = 10 V; ID = 100 mA; Tj = 25 °C - 2.7 4.5 Ω
drain 1 cm2.
NXP Semiconductors NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol S1 source TR1 G1 gate TR1 D2 drain TR2 S2 source TR2 G2 gate TR2 D1 drain TR1 3256
TSSOP6 (SOT363)
017aaa256 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
NX3020NAKS TSSOP6 plastic surface-mounted package; 6 leads SOT363 Marking
Table 4. Marking codes
Type number Marking code
[1]
NX3020NAKS Ua%
[1] % = placeholder for manufacturing site code Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
VDS drain-source voltage - 30 V
VGS gate-source voltage
Tj = 25 °C
-20 20 V
VGS = 4.5 V; Tamb = 25 °C [1] - 180 mAID drain current
VGS = 4.5 V; Tamb = 100 °C [1] - 110 mA
IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 720 mA
[2] - 260 mWPtot total power dissipation Tamb = 25 °C
[1] - 280 mW
NXP Semiconductors NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
Symbol Parameter Conditions Min Max Unit
Tsp = 25 °C - 1100 mW
Source-drain diode source current Tamb = 25 °C - 180 mA
Per device
Ptot total power dissipation Tamb = 25 °C [2] - 375 mW junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standardfootprint.
Tamb(°C)-75 17512525 75-25
017aaa001
Pder(%)
Fig. 1. Normalized total power dissipation as afunction of ambient temperature
Tamb (°C)-75 17512525 75-25
017aaa002
Ider(%)
Fig. 2. Normalized continuous drain current as afunction of ambient temperature
NXP Semiconductors NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
017aaa673
VDS (V)10-1 102101
10-2(A)
Limit RDSon = VDS/ID tp = 100 µs
tp = 1 ms
tp = 10 ms
tp = 100 msDC; Tsp = 25 °C
DC; Tamb = 25 °C; drain mounting pad 1 cm2
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
[1] - 390 480 K/WRth(j-a) thermal resistancefrom junction to
ambient
in free air
[2] - 380 430 K/W
Rth(j-sp) thermal resistance
from junction to solderpoint - 110 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP Semiconductors NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
017aaa674
tp (s)10-3 102 10310110-2 10-1
Zth(j-a)(K/W)
duty cycle = 1
0.33 0.25
0.2 0.1
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa675
tp (s)10-3 102 10310110-2 10-1
Zth(j-a)(K/W)
duty cycle = 1
0.33 0.25
0.2 0.1
FR4 PCB, mounting pad for drain 1 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NXP Semiconductors NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics (per transistor)
V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V
VGSth gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C 0.8 1.2 1.5 V
VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µAIDSS drain leakage current
VDS = 30 V; VGS = 0 V; Tj = 150 °C - - 10 µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 3.5 µA
VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 3.5 µA
VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 1 µA
VGS = -10 V; VDS = 0 V; Tj = 25 °C - - 1 µA
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 0.5 µA
IGSS gate leakage current
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - 0.5 µA
VGS = 10 V; ID = 100 mA; Tj = 25 °C - 2.7 4.5 Ω
VGS = 10 V; ID = 100 mA; Tj = 150 °C - 5.5 9.2 Ω
VGS = 4.5 V; ID = 100 mA; Tj = 25 °C - 3 5.2 Ω
RDSon drain-source on-state
resistance
VGS = 2.5 V; ID = 10 mA; Tj = 25 °C - 4 13 Ω
gfs forward transconductance VDS = 10 V; ID = 150 mA; Tj = 25 °C - 320 - mS
Dynamic characteristics (per transistor)
QG(tot) total gate charge - 0.34 0.44 nC
QGS gate-source charge - 0.11 - nC
QGD gate-drain charge
VDS = 15 V; ID = 150 mA; VGS = 4.5 V;
Tj = 25 °C 0.06 - nC
Ciss input capacitance - 13 20 pF
Coss output capacitance - 2.6 - pF
Crss reverse transfercapacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C 1.1 - pF
td(on) turn-on delay time - 5 10 ns rise time - 5 - ns
td(off) turn-off delay time - 34 68 ns fall time
VDS = 20 V; RL = 250 Ω; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C 17 - ns
Source-drain diode (per transistor)
VSD source-drain voltage IS = 115 mA; VGS = 0 V; Tj = 25 °C 0.47 0.7 1.2 V
NXP Semiconductors NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
VDS (V)0 431 2
017aaa663
0.5(A)V
4.5V
3.5V
VGS=2V
2.5VV
Tj = 25 °C
Fig. 6. Output characteristics: drain current as a function of drain-source voltage; typical values
017aaa664-4
10-3(A)
VGS (V)0 2.01.50.5 1.0
min typ max
Tj = 25 °C; VDS = 5 V
Fig. 7. Sub-threshold drain current as a function ofgate-source voltage
ID (A)0 0.50.40.2 0.30.1
017aaa665
RDSon(Ω)V 2.5V 3V
3.5V
4.5V
VGS=10V
Tj = 25 °C
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
VGS (V)0 1084 62
017aaa666
RDSon(Ω)=150°C=25°C
ID = 0.15 A
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
NXP Semiconductors NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
VGS (V)0 431 2
017aaa667
0.4(A)=150°C Tj=25°C
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values
Tj (°C)-60 1801200 60
017aaa668
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typicalvalues
017aaa669
VGS(th)(V)
max
typ
min
VDS (V)10-1 102101
017aaa670
102(pF)
Ciss
Coss
Crss
f = 1 MHz; VGS = 0 V
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typicalvalues

Partno	Mfg	Dc	Qty	Available	Descript
NX3020NAKS	NXP/PH	N/a	10000	avai	30 V, 180 mA dual N-channel Trench MOSFET