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NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified
1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits
1.4 Quick reference data[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
Rev. 1 — 1 August 2011 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj=25°C ---30 V
VGS gate-source voltage -8 - 8 V drain current VGS =-4.5V; Tamb =25°C [1] ---200 mA
Static characteristicsRDSon drain-source on-state
resistance
VGS =-4.5V; ID =-200mA; =25°C
-2.8 4.1 Ω
NXP Semiconductors NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET Pinning information Ordering information Marking[1] % = placeholder for manufacturing site code
Table 2. Pinning information
Table 3. Ordering informationNX3008PBKW SC-70 plastic surface-mounted package; 3 leads SOT323
Table 4. Marking codesNX3008PBKW AB%
NXP Semiconductors NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET Limiting values[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj =25°C - -30 V
VGS gate-source voltage -8 8 V drain current VGS =-4.5 V; Tamb =25°C [1]- -200 mA
VGS =-4.5 V; Tamb =100°C [1]- -130 mA
IDM peak drain current Tamb=25 °C; single pulse; tp≤10µs - -0.8 A
Ptot total power dissipation Tamb =25°C [2]- 260 mW
[1]- 310 mW
Tsp=25°C - 830 mW junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb =25°C [1]- -200 mA
ESD maximum ratingVESD electrostatic discharge voltage HBM [3]- 2000 V
NXP Semiconductors NX3008PBKW
30 V, 200 mA P-channel Trench MOSFETNXP Semiconductors NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Table 6. Thermal characteristicsRth(j-a) thermal resistance from junction to ambient in free air [1]- 415 480 K/W
[2]- 350 400 K/W
Rth(j-sp) thermal resistance from junction to solder point - - 150 K/W
