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Partno	Mfg	Dc	Qty	Available	Descript
NX2301P	NXP/PH	N/a	10000	avai	20 V, 2 A P-channel Trench MOSFET

NX2301P ,20 V, 2 A P-channel Trench MOSFETLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
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NX2301P
20 V, 2 A P-channel Trench MOSFET
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits 1.8 V RDSon rated for Low Voltage Gate Drive Very fast switching Trench MOSFET technology AEC-Q101 qualified
1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits
1.4 Quick reference data
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6cm2, t ≤ 5s.
[2] Pulse test: tp≤ 300 μs; δ≤ 0.01.
NX2301P
20 V, 2 A P-channel Trench MOSFET
Rev. 1 — 26 October 2010 Product data sheet
Table 1. Quick reference data
VDS drain-source voltage Tamb =25 °C- - −20 V
VGS gate-source voltage Tamb =25 °C- - ±8V drain current Tamb =25 °C; VGS= −4.5V
[1] -- −2A
RDSon drain-source on-state
resistance =25 °C;
VGS= −4.5V; = −1A
[2]- 100 120 mΩ
NXP Semiconductors NX2301P
20 V, 2 A P-channel Trench MOSFET
2. Pinning information
3. Ordering information
4. Marking
[1] * = placeholder for manufacturing site code
5. Limiting values
Table 2. Pinning G gate source D drain
Table 3. Ordering information
NX2301P TO-236AB plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
NX2301P MG*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tamb =25 °C- −20 V
VGS gate-source voltage Tamb =25 °C- ±8V drain current VGS= −4.5V [1]
Tamb =25 °C- −2A
Tamb =100 °C- −1.2 A
IDM peak drain current Tamb =25 °C;
single pulse;tp≤10μs −6A
NXP Semiconductors NX2301P
20 V, 2 A P-channel Trench MOSFET
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5s.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Ptot total power dissipation Tamb =25°C [2] -400 mW
[1] -710 mW
Tsp =25 °C- 2.8 W junction temperature 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
Source-drain diode source current Tamb =25°C [1]- −0.7 A
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
NXP Semiconductors NX2301P
20 V, 2 A P-channel Trench MOSFET
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5s.
Table 6. Thermal characteristics
Rth(j-a) thermal resistance from
junction to ambient
in free air [1]- - 315 K/W
[2]- - 175 K/W
Rth(j-sp) thermal resistance from
junction to solder point
--45 K/W
NXP Semiconductors NX2301P
20 V, 2 A P-channel Trench MOSFET
NXP Semiconductors NX2301P
20 V, 2 A P-channel Trench MOSFET
7. Characteristics
[1] Pulse test: tp≤ 300 μs; δ≤ 0.01.
Table 7. Characteristics =25 °C unless otherwise specified.
Static characteristics
V(BR)DSS drain-source breakdown
voltage= −250 μA; VGS =0V −20 --V
VGS(th) gate-source threshold
voltage= −250 μA; VDS =VGS −0.5 −0.75 −1.1 V
IDSS drain leakage current VDS= −20 V; VGS =0V - - −1 μA
IGSS gate leakage current VGS= ±8V; VDS =0V - - ±100 nA
RDSon drain-source on-state
resistance
[1]
VGS= −4.5 V; ID= −1A =25°C 100 120 mΩ= 150°C - 180 mΩ
VGS= −2.5 V; ID=−1 A - 155 190 mΩ
VGS= −1.8V; = −0.2A 210 270 mΩ
gfs forward
transconductance
VDS= −5V; ID= −2A [1] -4.7 -S
Dynamic characteristics
QG(tot) total gate charge ID= −2.2 A; VDS= −6V;
VGS= −4.5V
-4.5 6 nC
QGS gate-source charge - 1.1 - nC
QGD gate-drain charge - 0.9 - nC
Ciss input capacitance VGS =0V; VDS= −6V;
f=1MHz 380 - pF
Coss output capacitance - 135 - pF
Crss reverse transfer
capacitance
-115 -pF
td(on) turn-on delay time VDD= −6V; =6Ω;
VGS= −4.5V; =6Ω -ns rise time - 15 - ns
td(off) turn-off delay time - 50 - ns fall time - 25 - ns
Source-drain diode
VSD source-drain voltage IS= −1A; VGS =0V [1]- −0.8 −1.0 V
NXP Semiconductors NX2301P
20 V, 2 A P-channel Trench MOSFET
NXP Semiconductors NX2301P
20 V, 2 A P-channel Trench MOSFET

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