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NVD5890N
NVD5890N Final Datasheet
NVD5890N
Power MOSFET
40 V, 123 A, Single NïChannel DPAK
Features Low RDS(on) to Minimize Conduction Losses MSL 1/260°C AEC Q101 Qualified and PPAP Capable 100% Avalanche Tested These Devices are PbïFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications Motor Drivers Pump Drivers for Automotive Braking, Steering and Other High
Current Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
DrainïtoïSource Voltage VDSS 40 V
GateïtoïSource Voltage VGS 20 V
Continuous Drain Cur-
rent (RJC)
Steady
State
TC = 25°C ID 123 A
TC = 85°C 95
Power Dissipation
(RJC)
TC = 25°C PD 107 W
Continuous Drain Cur-
rent (RJA) (Note 1)
TA = 25°C ID 24 A
TA = 85°C 18.5
Power Dissipation
(RJA) (Note 1)
TA = 25°C PD 4.0 W
Pulsed Drain Current tp=10s TA = 25°C IDM 400 A
Current Limited by Package TA = 25°C IDmaxPkg 100 A
Operating Junction and Storage Temperature TJ, Tstg ï55 to
Source Current (Body Diode) IS 100 A
Drain to Source dV/dt dV/dt 6.0 V/ns
Single Pulse DrainïtoïSource Avalanche En-
ergy (VDD = 32 V, VGS = 10 V,
L = 0.3 mH, IL(pk) = 40 A, RG = 25 )
EAS 240 mJ
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s) 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
CASE 369C
DPAK
(Bent Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
40 V 3.7 m @ 10 V
RDS(on)
123 AV(BR)DSS
http://2
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
NïChannel
Gate
Drain3
Source
Drain = Year = Work Week
5890N = Device Code = PbïFree Package
