NVD5865NL ,Single N-Channel Power MOSFETELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NVD5865NLT4G , Power MOSFET 60 V, 46 A, 16 m, Single N−Channel
NVD5890N ,NVD5890N Final DatasheetELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NVD5890NL ,40 V, 3.7 mOhm, 123 A, Single N−Channel Power MOSFETELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NVD5890NLT4G , Power MOSFET 40 V, 3.7 m, 123 A, Single N.Channel DPAK
NVD6820NL ,90V, 50A, 16.7 mOhm, Single N-Channel DPAK Logic Level Power MOSFETELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
OZ-SS-105L1 , 16A Miniature Power PC Board Relay
OZ-SS-148L , 16A Miniature Power PC Board Relay
OZ-SS-148L , 16A Miniature Power PC Board Relay
P0080ECL , SIDACtor® Device
P0080ECL , SIDACtor® Device
P0080ECL , SIDACtor® Device
NVD5865NL
Single N-Channel Power MOSFET
NVD5865NL
Power MOSFET
60 V, 46 A, 16 m, Single NïChannel
Features Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AECïQ101 Qualified These Devices are PbïFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
DrainïtoïSource Voltage VDSS 60 V
GateïtoïSource Voltage VGS 20 V
Continuous Drain Cur-
rent RJC (Notes 1 & 3)
Steady
State
TC = 25°C ID 46 A
TC = 100°C 33
Power Dissipation RJC
(Note 1)
TC = 25°C PD 71 W
TC = 100°C 36
Continuous Drain Cur-
rent RJA (Notes 1, 2 & Steady
State
TA = 25°C ID 10 A
TA = 100°C 7.0
Power Dissipation RJA
(Notes 1 & 2)
TA = 25°C PD 3.1 W
TA = 100°C 1.5
Pulsed Drain Current TA = 25°C, tp = 10 s IDM 203 A
Current Limited by
Package (Note 3)
TA = 25°C IDmaxpkg 60 A
Operating Junction and Storage Temperature TJ, Tstg ï55 to
Source Current (Body Diode) IS 46 A
Single Pulse DrainïtoïSource Avalanche
Energy (L = 0.1 mH)
EAS 36 mJ
IAS 27 A
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s) 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
JunctionïtoïCase (Drain) (Note 1) RJC 2.1 °C/W
JunctionïtoïAmbient ï Steady State (Note 2) RJA 49 The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted. Surfaceïmounted on FR4 board using a 650 mm2, 2 oz. Cu pad. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
DPAK
CASE 369AA
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
60 V 16 m @ 10 V
RDS(on)
46 AV(BR)DSS
19 m @ 4.5 V
http://2
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
Gate
Drain3
Source
Drain = Year = Work Week
V5865L = Device Code = PbïFree Package
NïCHANNEL MOSFET
