NVD5490NL ,Power MOSFETELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NVD5803N ,Data SheetELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NVD5803NT4G , Power MOSFET 40 V, 85 A, Single N−Channel, DPAK
NVD5805NT4G , Power MOSFET 40 V, 51 A, Single N.Channel, DPAK
NVD5862N ,NVD5862NELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NVD5863NL ,Power MOSFET, 60 V, 82 A, 7.1 mΩ, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
OZ990S , Intelligent Manager Smart PMU/GPIO
OZ990S , Intelligent Manager Smart PMU/GPIO
OZ-SS-105L1 , 16A Miniature Power PC Board Relay
OZ-SS-148L , 16A Miniature Power PC Board Relay
OZ-SS-148L , 16A Miniature Power PC Board Relay
P0080ECL , SIDACtor® Device
NVD5490NL
Power MOSFET
NVD5490NL
Power MOSFET
60 V, 64 m, 17 A, Single NïChannel
Features Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AECïQ101 Qualified and PPAP Capable These Devices are PbïFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
DrainïtoïSource Voltage VDSS 60 V
GateïtoïSource Voltage VGS 20 V
Continuous Drain Cur-
rent RJC (Notes 1 & 3)
Steady
State
TC = 25°C ID 17 A
TC = 100°C 12
Power Dissipation RJC
(Note 1)
TC = 25°C PD 49 W
TC = 100°C 24
Continuous Drain Cur-
rent RJA (Notes 1, 2 & Steady
State
TA = 25°C ID 5.0 A
TA = 100°C 3.0
Power Dissipation RJA
(Notes 1 & 2)
TA = 25°C PD 3.4 W
TA = 100°C 1.7
Pulsed Drain Current TA = 25°C, tp = 10 s IDM 71 A
Current Limited by
Package (Note 3)
TA = 25°C IDmaxpkg 30 A
Operating Junction and Storage Temperature TJ, Tstg ï55 to
Source Current (Body Diode) IS 41 A
Single Pulse DrainïtoïSource Avalanche
Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL(pk) = 9.0 A, L = 1.0 mH, RG = 25 )
EAS 41 mJ
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s) 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
JunctionïtoïCase ï Steady State (Drain) RJC 3.1 °C/W
JunctionïtoïAmbient ï Steady State (Note 2) RJA 44 The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted. Surfaceïmounted on FR4 board using a 650 mm2, 2 oz. Cu pad. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
DPAK
CASE 369AA
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
60 V 64 m @ 10 V
RDS(on)
17 AV(BR)DSS
85 m @ 4.5 V
http://2
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
NïChannel
D (2,4)
S (3)
G (1)
Gate
Drain3
Source
Drain = Year = Work Week
5490L = Device Code = PbïFree Package
