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NVD5117PLONN/a10000avaiPower MOSFET, -60 V, -61 A, 16 mΩ, Single P-Channel


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NVD5117PL
Power MOSFET, -60 V, -61 A, 16 mΩ, Single P-Channel
NVD5117PL
Power MOSFET
−60 V , 16 m�, −61 A, Single P−Channel
Features
Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
The entire application environment impacts the thermal resistance valuesshown, they are not constants and are only valid for the particular conditionsnoted.2. Surface−mounted on FR4 board using a 650 mm2 , 2 oz. Cu pad.3. Maximum current for pulses as long as 1 second is higher but is dependenton pulse duration and duty cycle.
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