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NUP4201DR2-NUP4201MR6T1
2.5 V/3.3 V SiGe Differential Smart Gate with Output Level Select
AND8082/D
ESD Protection for Dual
USB 2.0 Port Using the Low
Capacitance TVS Diode
Array, NUP4201DR2 Device
Prepared by: Alejandro LaraApplications Engineer
ABSTRACTEven though ESD protection is not yet required by the
USB 1.1 and USB 2.0 specifications, it is extremely
important and necessary that all USB ports have protection
against ESD conditions because USB components are
subject to electrostatic discharge conditions since USB is a
hot plugging and unplugging system.
Our modern society has rapidly come to fully depend on
electronics. And modern computers are based increasingly
on low power logic chips, all with ESD sensitivity due to
MOS dielectric breakdowns and bipolar reverse junction
current limits. The USB ICs are not an exception since the
majority of them are designed and manufactured based in
CMOS processes which make them extremely sensitive to
damage from ESD conditions. Because USB is a hot
insertion and removal system, it is extremely vulnerable to
receive ESD conditions possibly generated by the users or
by air discharges. Users can induce ESD conditions while
plugging or unplugging any USB peripherals. Air
discharges can happen a few inches away from the
conducting surface. Static electricity can cause damage to
the USB interface, USB ICs malfunction, and worst of all,
ghost data bits. Product damage or product malfunction
results in a “Hard failure” or destroyed component. It is easy
to isolate and replace the failed component and put the
system back in service, however, if a “soft failure” occurs
(CMOS component degraded), the system anomaly is not
detected in retesting, and hours are wasted in
troubleshooting because the system continues to produce
irregular data bits, so this is why, ESD protection in USB
components is now a MUST.
Through time, industrial standards have been developed
to standardize the ESD compliance of semiconductor
devices, some of the most common standards are described
below: IEC 61000–4–2. This International Standard relates to
the immunity requirements and test methods for
electrical and electronic equipment subjected to static
electricity discharges, from operators directly, and to IEC 61000–4–4. This International Standard relates to
the immunity requirements and test methods for
electrical and electronic equipment subjected to EFT
conditions. IEC 61000–4–5. This International Standard relates to
the immunity requirements and test methods for
electrical and electronic equipment subjected to
Lighting conditions (surge 8 x 20 �sec).
ESD protection for USB components not only implicates
compliance with the ESD industrial standards previously
listed, but it also implicates the usage of very sophisticated
semiconductor devices capable to operate under conditions
of high speed data transmission and the high technology of
the USB controller, so conventional methods to protect
serial ports would be obsolete and non–efficient for USB
applications.
Having said the implications of the ESD protection for
USB components, it is possible to define what are the key
characteristics that semiconductor devices intended for
USB applications must have: Low capacitance (< 5.0 pf) to minimize the signal
attenuation at high speed data rate (480 Mbs, USB 2.0). Fast time operation response (nanosecond) to protect
the USB components against the fast rise time of the
ESD pulses. Low leakage current to minimize the power
consumption under normal operation conditions. Robustness to drive and absorb repetitive ESD
conditions without damage. Integrated and reduced package.
The purpose of the present application note is to describe
and explain in detail the usage and future of the new Low
Capacitance TVS Diode Array (NUP4201DR2 device) to be
used for ESD protection for either USB 2.0 or USB 1.1
components.
