NUP2301MW6T1 ,Low Cap Diode ArrayELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Each Diode)JCharacteristic Symbol Min ..
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NUP2301MW6T1
Low Cap Diode Array
NUP2301MW6T1
Low Capacitance Diode
Array for ESD Protection in
Two Data Lines
NUP2301MW6T1 is a MicroIntegration device designed to
provide protection for sensitive components from possible harmful
electrical transients; for example, ESD (electrostatic discharge).
Features Low Capacitance (2.0 pf Maximum Between I/O Lines) Single Package Integration Design Provides ESD Protection for JEDEC Standards JESD22
Machine Model = Class C
Human Body Model = Class 3B Protection for IEC61000−4−2 (Level 4)
8.0 kV (Contact)
15 kV (Air) Ensures Data Line Speed and Integrity Fewer Components and Less Board Space Direct the Transient to Either Positive Side or to the Ground Pb−Free Package is Available
Applications T1/E1 Secondary IC Protection T3/E3 Secondary IC Protection HDSL, IDSL Secondary IC Protection Video Line Protection Microcontroller Input Protection Base StationsI2 C Bus Protection
MAXIMUM RATINGS (Each Diode) (TJ = 25°C unless otherwise noted)Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (notnormal operating conditions) and are not valid simultaneously. If these limitsare exceeded, device functional operation is not implied, damage may occurand reliability may be affected.
