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NUP1301U
Ultra low capacitance ESD protection array
1. Product profile
1.1 General descriptionUltra low capacitance ElectroStatic Discharge (ESD) protection array in a small
SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package designed to
protect one signal line in rail-to-rail configuration from the damage caused by
ESD and other transients.
1.2 Features and benefits ESD protection of one signal line (rail-to-rail configuration) Ultra low diode capacitance: Cd =0.6pF ESD protection up to30kV IEC 61000-4-2; level4 (ESD) IEC 61000-4-5 (surge); IPP =11A AEC-Q101 qualified
1.3 Applications Telecommunication networks Video line protection Microcontroller protectionI2 C-bus protection Antenna power supply Analog audio Class-D amplifier
1.4 Quick reference data
NUP1301U
Ultra low capacitance ESD protection array
Rev. 1 — 28 January 2011 Product data sheet
Table 1. Quick reference dataTamb =25 C unless otherwise specified.
Per diodeVRRM repetitive peak reverse voltage -- 80 V diode capacitance f=1 MHz; =0V 0.6 0.75 pF reverse current VR =80V - - 100 nA
NXP Semiconductors NUP1301U
Ultra low capacitance ESD protection array
2. Pinning information
3. Ordering information
4. Marking[1] * = placeholder for manufacturing site code
5. Limiting values
Table 2. Pinning
Table 3. Ordering informationNUP1301U - plastic surface-mounted package; 3 leads SOT323
Table 4. MarkingNUP1301U *VU
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per diodeVRRM repetitive peak
reverse voltage
-80 V reverse voltage - 80 V forward current [1] -215 mA
IFRM repetitive peak
forward current1 ms; 0.25 - 500 mA
IFSM non-repetitive peak
forward current
square wave [2] =1 s- 4 A =1 ms - 1 A =1s - 0.5 A
NXP Semiconductors NUP1301U
Ultra low capacitance ESD protection array[1] Pulse test: tp 300 s; 0.02.
[2] Tj =25 C prior to surge.
[3] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
[4] Measured from pin 3 to pins 1 and 2 (pins1 and 2 are connected).
[5] Single diode loaded.
[6] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 3 to pins 1 and 2 (pins1 and 2 are connected).
Per devicePPP peak pulse power tp =8/20s [3][4] -220 W
IPP peak pulse current tp =8/20s [3][4] -11 A
Ptot total power dissipation Tamb25C [5][6] -200 mW junction temperature - 150 C
Tamb ambient temperature 55 +150 C
Tstg storage temperature 65 +150 C
Table 6. ESD maximum ratingsVESD electrostatic discharge
voltage
IEC 61000-4-2
(contact discharge)
[1][2] -30 kV
machine model - 400 V
MIL-STD-883
(human body model)
-10 kV
Table 7. ESD standards complianceIEC 61000-4-2; level 4 (ESD) >15kV (air); >8kV (contact)
MIL-STD-883; class 3B (human body model) >8kV
Table 5. Limiting values …continuedIn accordance with the Absolute Maximum Rating System (IEC 60134).
NXP Semiconductors NUP1301U
Ultra low capacitance ESD protection array
6. Thermal characteristics[1] Single diode loaded.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 8. Thermal characteristics
Per deviceRth(j-a) thermal resistance from
junction to ambient
in free air [1][2] -- 625 K/W
Rth(j-sp) thermal resistance from
junction to solder point 300 K/W
NXP Semiconductors NUP1301U
Ultra low capacitance ESD protection array
7. Characteristics[1] Pulse test: tp 300 s; 0.02.
[2] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
[3] Measured from pin 3 to pins 1 and 2 (pins1 and 2 are connected).
Table 9. Electrical characteristicsTamb =25 C unless otherwise specified.
Per diodeVBR breakdown voltage IR= 100A 100 - - V forward voltage [1]=1 mA - - 715 mV=10 mA - - 855 mV=50 mA --1 V= 150 mA --1.25 V reverse current VR=25V --30 nA=80V - - 100 nA =25V; =150C
--25 A =80V; =150C
--35 A diode capacitance f=1 MHz; VR =0V - 0.6 0.75 pF
Per deviceVCL clamping voltage IPP =1A [2][3] --3 V
IPP =11A [2][3] --20 V
NXP Semiconductors NUP1301U
Ultra low capacitance ESD protection arrayNXP Semiconductors NUP1301U
Ultra low capacitance ESD protection array
