NTTS2P03R2 ,Power MOSFET -2.48 Amps, -30 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitDrain−to−Source Voltage V ..
NTUD3128NT5G , Small Signal MOSFET 20 V, 200 mA, Dual N-Channel, 1.0 mm x 1.0 mm SOT-963 Package
NTUD3169CZT5G , Small Signal MOSFET 20 V, 220 mA / −200 mA, Complementary, 1.0 x 1.0 mm SOT−963 Package
NTUD3170NZT5G , Small Signal MOSFET 20 V, 220 mA, Dual N−Channel, 1.0 mm x 1.0 mm SOT−963 Package
NTY100N10 ,Power MOSFET 123 A, 100 V N-Channel Enhancement-Mode TO264 Package3R , DRAIN-TO-SOURCE RESISTANCE R , DRAIN-TO-SOURCE CURRENT () I , DRAIN CURRENT (A)DS(on) DS(on) ..
NTZD3154NT5G , Small Signal MOSFET 20 V, 540 mA, Dual N−Channel
OZ962R , High-Efficiency Inverter Controller
OZ964G , Change Summary
OZ964G , Change Summary
OZ965IR , High-Efficiency Inverter Controller
OZ965IR , High-Efficiency Inverter Controller
OZ990S , Intelligent Manager Smart PMU/GPIO
NTTS2P03-NTTS2P03R2
Power MOSFET -2.48 Amps, -30 Volts
NTTS2P03R2
Power MOSFET -2.48 Amps, -30 Volts
P−Channel Enhancement Mode
Single Micro8� Package
Features• Ultra Low RDS(on)• Higher Efficiency Extending Battery Life• Miniature Micro8 Surface Mount Package• Diode Exhibits High Speed, Soft Recovery• Micro8 Mounting Information Provided
Applications• Power Management in Portable and Battery−Powered Products, i.e.:
Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Minimum FR−4 or G−10 PCB, Time ≤ 10 Seconds. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single
sided), Time ≤ 10 Seconds. Minimum FR−4 or G−10 PCB, Steady State. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single
sided), Steady State. Pulse Test: Pulse Width = 300 �s, Duty Cycle = 2%.
