NTTD1P02 ,Power MOSFET -1.45 Amps, -20 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 4.)CCharacteristic Symbol Min Ty ..
NTTD1P02R2 ,Power MOSFET -1.45 Amps, -20 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitGDrain−to−Source Voltage ..
NTTFS4821NTWG , Power MOSFET 30 V, 57 A, Single N−Channel, u8FL
NTTFS4824NTAG , Power MOSFET 30 V, 69 A, Single N−Channel, u8FL
NTTFS4937NTAG , Power MOSFET 30 V, 75 A, Single N−Channel, 8FL
NTTS2P02 ,Power MOSFET -2.4 Amps, -20 Volts3–I DRAIN CURRENT (AMPS)R , DRAIN–TO–SOURCE RESISTANCE R , DRAIN–TO–SOURCE RESISTANCE ()D,DS(on) D ..
OZ962R , High-Efficiency Inverter Controller
OZ964G , Change Summary
OZ964G , Change Summary
OZ965IR , High-Efficiency Inverter Controller
OZ965IR , High-Efficiency Inverter Controller
OZ990S , Intelligent Manager Smart PMU/GPIO
NTTD1P02-NTTD1P02R2
Power MOSFET -1.45 Amps, -20 Volts
NTTD1P02R2
Power MOSFET -1.45 Amps, -20 Volts
P−Channel Enhancement Mode
Dual Micro8 Package
Features• Ultra Low RDS(on)• Higher Efficiency Extending Battery Life• Logic Level Gate Drive• Miniature Dual Micro8 Surface Mount Package• Diode Exhibits High Speed, Soft Recovery• Micro8 Mounting Information Provided
Applications• Power Management in Portable and Battery−Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Minimum FR−4 or G−10 PCB, Steady State. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single
sided), Steady State. Pulse Test: Pulse Width = 300 �s, Duty Cycle = 2%.
