NTSX2102GU8 Fast Delivery |IC PHOENIX CO.,LIMITED

NTSX2102GU8 ,NTSX2102GU8Applications2 I C/SMBus UART GPIONTSX2102NXP SemiconductorsDual supply translating transceiver; ..
NTTD1P02 ,Power MOSFET -1.45 Amps, -20 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 4.)CCharacteristic Symbol Min Ty ..
NTTD1P02R2 ,Power MOSFET -1.45 Amps, -20 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitGDrain−to−Source Voltage ..
NTTFS4821NTWG , Power MOSFET 30 V, 57 A, Single N−Channel, u8FL
NTTFS4824NTAG , Power MOSFET 30 V, 69 A, Single N−Channel, u8FL
NTTFS4937NTAG , Power MOSFET 30 V, 75 A, Single N−Channel, 8FL
OZ962R , High-Efficiency Inverter Controller
OZ964G , Change Summary
OZ964G , Change Summary
OZ965IR , High-Efficiency Inverter Controller
OZ965IR , High-Efficiency Inverter Controller
OZ990S , Intelligent Manager Smart PMU/GPIO

NTSX2102GU8
NTSX2102GD
1. General description
The NTSX2102 is a 2-bit, dual supply translating transceiver with auto direction sensing,
that enables bidirectional voltage level translation. It features two 2-bit input-output ports
(An and Bn), one output enable input (OE) and two supply pins (VCC(A) and VCC(B)). Both
supplies can be supplied at any voltage between 1.65 V and 5.5 V. This flexibility makes
the device suitable for translating between any of the voltage nodes (1.8 V, 2.5 V, 3.3 V
and 5.0 V). Pins An and OE are referenced to VCC(A) and pins Bn are referenced to VCC(B).
A LOW level at pin OE causes the outputs to assume a high-impedance OFF-state. This
device is fully specified for partial power-down applications using IOFF. The IOFF circuitry
disables the output, preventing the damaging backflow current through the device when it
is powered down.
2. Features and benefits Wide supply voltage range: VCC(A): 1.65Vto 5.5 V and VCC(B): 1.65Vto 5.5V Maximum data rates: 50 Mbps IOFF circuitry provides partial Power-down mode operation Inputs accept voltages up to 5.5 V ESD protection: HBM JS-001 Class 2 exceeds 2000V CDM JESD22-C101E exceeds 2000V Latch-up performance exceeds 100 mA per JESD 78B Class II Multiple package options Specified from 40 Cto+85C
3. ApplicationsI2 C/SMBus UART GPIO
NTSX2102
Dual supply translating transceiver; open drain; auto
direction sensing
Rev. 2 — 11 February 2013 Product data sheet
NXP Semiconductors NTSX2102
Dual supply translating transceiver; open drain; auto direction sensing
4. Ordering information
5. Marking
6. Functional diagram
Table 1. Ordering information
NTSX2102GM 40 C to +85 C XQFN8 plastic extremely thin quad flat package; no leads; terminals; body 1.6 1.6 0.5 mm
SOT902-2
NTSX2102GU8 40 C to +85 C XQFN8 XQFN8: plastic, extremely thin quad flat package; no
leads; 8 terminals; body 1.4  1.2  0.5 mm
SOT1309-1
NTSX2102GD 40 C to +85 C XSON8 plastic extremely thin small outline package; leads; 8 terminals; body 3  2  0.5 mm
SOT996-2
Table 2. Marking
NTSX2102GM sX2
NTSX2102GU8 sX
NTSX2102GD sX2
NXP Semiconductors NTSX2102
Dual supply translating transceiver; open drain; auto direction sensing
7. Pinning information
7.1 Pinning
7.2 Pin description
Table 3. Pin description
B2, B1 6, 7 data input or output (referenced to VCC(B))
GND 4 ground (0V)
VCC(A) 1 supply voltage A
A2, A1 3, 2 data input or output (referenced to VCC(A)) 5 output enable input (active HIGH; referenced to VCC(A))
VCC(B) 8 supply voltage B
NXP Semiconductors NTSX2102
Dual supply translating transceiver; open drain; auto direction sensing
8. Functional description
[1] H= HIGH voltage level; L= LOW voltage level; X= don’t care; Z = high-impedance OFF-state.
[2] When either VCC(A) or VCC(B) is at GND level, the device goes into power-down mode.
9. Limiting values
[1] The minimum input and minimum output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] VCCO is the supply voltage associated with the output.
10. Recommended operating conditions
Table 4. Function table[1]
1.65 V to 5.5 V 1.65 V to 5.5 V L Z Z
1.65 V to 5.5 V 1.65 V to 5.5 V H input or output output or input
GND[2] GND[2] XZ Z
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0V).
VCC(A) supply voltage A 0.5 +6.5 V
VCC(B) supply voltage B 0.5 +6.5 V input voltage A port and OE input [1][2] 0.5 +6.5 V
B port [1][2] 0.5 +6.5 V output voltage Active mode [1][2]
A or B port 0.5 VCCO +0.5 V
Power-down or 3-state mode [1]
A or B port 0.5 +6.5 V
IIK input clamping current VI <0V 50 - mA
IOK output clamping current VO <0V 50 - mA output current VO =0Vto VCCO [2]- 50 mA
ICC supply current ICC(A) or ICC(B) -100 mA
IGND ground current 100 - mA
Tstg storage temperature 65 +150 C
Ptot total power dissipation Tamb= 40 C to +85 C- 250 mW
Table 6. Recommended operating conditions[1]
VCC(A) supply voltage A 1.65 5.5 V
VCC(B) supply voltage B 1.65 5.5 V
NXP Semiconductors NTSX2102
Dual supply translating transceiver; open drain; auto direction sensing
[1] Hold the A and B sides of an unused I/O pair in the same state, both at VCCI or both at GND.
11. Static characteristics
[1] VCCO is the supply voltage associated with the output.
Tamb ambient temperature 40 +85 C
t/V input transition rise and fall rate A, B or OE port
VCC(A) = 1.65 V to 5.5V;
VCC(B) =1.65V to 5.5V 10 ns/V
Table 6. Recommended operating conditions[1]
Table 7. Typical static characteristics
At recommended operating conditions; voltages are referenced to GND (ground=0 V); Tamb = 25 C. input
capacitance
OE input; VCC(A) = VCC(B) =0V - 2.2 - pF
CI/O input/output
capacitance
A or B port; VCC(A) = 5.0 V; VCC(B) =5.0V - 10 - pF
Table 8. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground=0V).
VIH HIGH-level input
voltage
A or B port
VCC(A) = 1.65 V to 5.5 V; VCC(B)= 1.65V to 5.5V [1] VCCI  0.4 - V
OE input
VCC(A) = 1.65 V to 5.5 V; VCC(B)= 1.65 V to 5.5V 0.65VCC(A) -V
VIL LOW-level input
voltage
A or B port
VCC(A) = 1.65 V to 5.5 V; VCC(B)= 1.65 V to 5.5V - 0.4 V
OE input
VCC(A) = 1.65 V to 5.5 V; VCC(B)= 1.65 V to 5.5V - 0.35VCC(A) V
VOL LOW-level output
voltage
A or B port; IO =6 mA [2]
VI  0.15 V; VCC(A) =1.65Vto5.5V;
VCC(B) =1.65Vto5.5V
-0.4 V input leakage
current
OE input; VI = 0 V to VCC(A); VCC(A) =1.65Vto5.5V;
VCC(B) =1.65Vto5.5V 1 A
IOZ OFF-state output
current
A or B port; VO =0V orVCCO; VCC(A)= 0 V to 5.5V;
VCC(B)=0V to 5.5V
[2] - 2 A
IOFF power-off leakage
current
A port; VI or VO = 0 V to 5.5V;
VCC(A) =0V; VCC(B) =0Vto5.5V 2 A
B port; VI or VO = 0 V to 5.5V;
VCC(B) =0V; VCC(A) =0Vto5.5V 2 A
NXP Semiconductors NTSX2102
Dual supply translating transceiver; open drain; auto direction sensing
[1] VCCI is the supply voltage associated with the input.
[2] VCCO is the supply voltage associated with the output.
12. Dynamic characteristics
[1] VCCO is the supply voltage associated with the output.
[2] CPD is used to determine the dynamic power dissipation (PD in W). =CPD VCC2fi N+ (CL VCC2 fo) where:= input frequency in MHz;= output frequency in MHz;= load capacitance in pF;
VCC= supply voltage in V;= number of inputs switching;
(CL VCC2fo)= sum of the outputs.
[3] VCCI is the supply voltage associated with the input.
ICC supply current VI = 0 V or VCCI; IO = 0A [1]
ICC(A)
VCC(A) = 1.65 V to 5.5 V; VCC(B)= 1.65 V to 5.5V; = LOW or HIGH A
VCC(A) = 1.65 V to 5.5 V; VCC(B) =0V - 2 A
VCC(A) = 0 V; VCC(B) =1.65 Vto5.5V - 2 A
ICC(B)
VCC(A) = 1.65 V to 5.5 V; VCC(B)= 1.65 V to 5.5V; = LOW A
VCC(A) = 1.65 V to 5.5 V; VCC(B) =0V - 2 A
VCC(A) = 0 V; VCC(B) =1.65 Vto5.5V - 2 A
Table 8. Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground=0V).
Table 9. Typical dynamic characteristics for temperature 25 C
Voltages are referenced to GND (ground=0 V); for test circuit see Figure 7; for waveforms see Figure 5 and Figure6.
tTLH LOW to HIGH
output transition
time
A or B port 7 5 4 3 ns
tTHL HIGH to LOW
output transition
time
A or B port 4 6 8 11 ns
CPD power dissipation
capacitance= VCC(A); VCC(A) = VCC(B);
fI = 400 kHz; VI = VCCI[3]
[2] --- 13.5 pF
NXP Semiconductors NTSX2102
Dual supply translating transceiver; open drain; auto direction sensingTable 10. Dynamic characteristics for temperature range 40 C to +85 C[1]
Voltages are referenced to GND (ground=0 V); for test circuit see Figure 7; for wave forms see Figure 5 and Figure6.
VCC(A) = 1.8 V  0.15 V
tPHL HIGH to LOW
propagation delay
A to B 3 7 3 6 3 5 5 7 ns
tPLH LOW to HIGH
propagation delay
A to B 5 12 5 8 4 8 4 7 ns
tPHL HIGH to LOW
propagation delay
B to A 3 7 3 6 3 5 5 7 ns
tPLH LOW to HIGH
propagation delay
B to A 5 12 1 3 1 2 1 2 ns
tPZL OFF-state to LOW
propagation delaytoA 9 16 9 18 10 14 10 15 nstoB 9 16 6 12 6 12 6 14 ns
tPLZ LOW to OFF-state
propagation delaytoA 100 120 100 120 100 120 100 120 nstoB 100 120 100 120 100 120 100 120 ns
tsk(o) output skew time between channels [2] -1 - 1 - 1 - 1 ns
fdata data rate - 18 - 18 - 18 - 18 Mbps
VCC(A) = 2.5 V  0.2 V
tPHL HIGH to LOW
propagation delay
A to B 3 6 2 5 2 5 2 5 ns
tPLH LOW to HIGH
propagation delay
A to B 1 3 2 4 2.5 7 2.5 5 ns
tPHL HIGH to LOW
propagation delay
B to A 3 6 2 5 2 5 2 5 ns
tPLH LOW to HIGH
propagation delay
B to A 5 8 2 4 1.5 3 1 3 ns
tPZL OFF-state to LOW
propagation delaytoA 6 12 5 10 8 10 5 8 nstoB 9 18 5 10 4.5 9 4 8 ns
tPLZ LOW to OFF-state
propagation delaytoA 100 120 100 120 100 120 100 120 nstoB 100 120 100 120 100 120 100 120 ns
tsk(o) output skew time between channels [2] -1 - 1 - 1 - 1 ns
fdata data rate - 18 - 32 - 32 - 32 Mbps
VCC(A) = 3.3 V  0.3 V
tPHL HIGH to LOW
propagation delay
A to B 3 5 2 5 2 4 2 4 ns
tPLH LOW to HIGH
propagation delay
A to B 1 2 1.5 3 1.5 3 2 4 ns
tPHL HIGH to LOW
propagation delay
B to A 3 5 2 5 2 4 2 4 ns
tPLH LOW to HIGH
propagation delay
B to A 4 8 2.5 7 1.5 3 1 3 ns
tPZL OFF-state to LOW
propagation delaytoA 6 12 4.5 9 6 9 4 7 nstoB 10 14 5 10 6 9 4 8 ns
NXP Semiconductors NTSX2102
Dual supply translating transceiver; open drain; auto direction sensing
[1] All typical values are measured at nominal VCC and Tamb = 25 °C.
[2] Skew between any two outputs of the same package switching in the same direction.
13. Waveforms
tPLZ LOW to OFF-state
propagation delaytoA 100 120 100 120 100 120 100 120 nstoB 100 120 100 120 100 120 100 120 ns
tsk(o) output skew time between channels [2] -1 - 1 - 1 - 1 ns
fdata data rate - 18 - 32 - 40 - 40 Mbps
VCC(A) = 5.0 V  0.5 V
tPHL HIGH to LOW
propagation delay
A to B 5 7 2 5 2 4 2 4 ns
tPLH LOW to HIGH
propagation delay
A to B 1 2 1 3 1 3 1 3 ns
tPHL HIGH to LOW
propagation delay
B to A 5 7 2 5 2 4 2 4 ns
tPLH LOW to HIGH
propagation delay
B to A 4 7 2.5 5 2 4 1 3 ns
tPZL OFF-state to LOW
propagation delaytoA 6 14 4 8 4 8 3 5 nstoB 10 15 5 8 4 7 4 5 ns
tPLZ LOW to OFF-state
propagation delaytoA 100 120 100 120 100 120 100 120 nstoB 100 120 100 120 100 120 100 120 ns
tsk(o) output skew time between channels [2] -1 - 1 - 1 - 1 ns
fdata data rate - 18 - 32 - 40 - 52 Mbps
Table 10. Dynamic characteristics for temperature range 40 C to +85 C[1]
Voltages are referenced to GND (ground=0 V); for test circuit see Figure 7; for wave forms see Figure 5 and Figure6.
NXP Semiconductors NTSX2102
Dual supply translating transceiver; open drain; auto direction sensing
[1] VCCI is the supply voltage associated with the input.
[2] VCCO is the supply voltage associated with the output.
Table 11. Measurement points [1][2]
1.65 V to 5.5 V 0.5VCCI 0.5VCCO 0.5VCCO 0.1VCCO
NXP Semiconductors NTSX2102
Dual supply translating transceiver; open drain; auto direction sensing
[1] VCCI is the supply voltage associated with the input.
Table 12. Test data
1.65 V to 1.95 V 1.65 V to 1.95 V VCCI  2.0ns 50pF 2.2k
2.3 V to 2.7 V 2.3 V to 2.7 V VCCI  2.0ns 50pF 2.2k
3.0 V to 3.6 V 3.0 V to 3.6 V VCCI  2.5ns 50pF 2.2k
4.5 V to 5.5 V 4.5 V to 5.5 V VCCI  2.5ns 50pF 2.2k

Partno	Mfg	Dc	Qty	Available	Descript
NTSX2102GU8	NXP	N/a	4000	avai	NTSX2102GU8