NTR4171P ,30 V, 3.5 A, 75 mOhm Single P-Channel Power MOSFET, SOT-23ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTR4501 ,Power MOSFET 20 V, 3.2 A, Single N-Channel, SOT-23Electrical Characteristics (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTR4501N ,Power MOSFET 20 V, 3.2 A, Single N-Channel, SOT-23Electrical Characteristics (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTR4501NT1 ,Power MOSFET 20 V, 3.2 A, Single N-Channel, SOT-23Maximum ratings applied to the device are individual stress limit values (not Gate Sourcenormal ope ..
NTR4502P ,Power MOSFET -30V, -1.95 A, Single, P-Channel SOT-23Electrical Characteristics (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTR4502PT1 , Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23
OZ962R , High-Efficiency Inverter Controller
OZ964G , Change Summary
OZ964G , Change Summary
OZ965IR , High-Efficiency Inverter Controller
OZ965IR , High-Efficiency Inverter Controller
OZ990S , Intelligent Manager Smart PMU/GPIO
NTR4171P
30 V, 3.5 A, 75 mOhm Single P-Channel Power MOSFET, SOT-23
NTR4171P
Power MOSFET
−30 V, −3.5 A, Single P−Channel, SOT−23
Features Low RDS(on) at Low Gate Voltage Low Threshold Voltage High Power and Current Handling Capability This is a Pb−Free Device
Applications Load Switch Optimized for Battery and Load Management Applications in
Portable Equipment like Cell Phones, PDA’s, Media Players, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq[2 oz] including traces)
