NTR4170N ,NTR4170NELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Conditions Min T ..
NTR4171P ,30 V, 3.5 A, 75 mOhm Single P-Channel Power MOSFET, SOT-23ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTR4501 ,Power MOSFET 20 V, 3.2 A, Single N-Channel, SOT-23Electrical Characteristics (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTR4501N ,Power MOSFET 20 V, 3.2 A, Single N-Channel, SOT-23Electrical Characteristics (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTR4501NT1 ,Power MOSFET 20 V, 3.2 A, Single N-Channel, SOT-23Maximum ratings applied to the device are individual stress limit values (not Gate Sourcenormal ope ..
NTR4502P ,Power MOSFET -30V, -1.95 A, Single, P-Channel SOT-23Electrical Characteristics (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
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NTR4170N
NTR4170N
NTR4170N
Power MOSFET
30 V, 3.1 A, Single NïChannel, SOTï23
Features Low RDS(on) Low Gate Charge Low Threshold Voltage Halide Free This is a PbïFree Device
Applications Power Converters for Portables Battery Management Load/Power Switch
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
DrainïtoïSource Voltage VDSS 30 V
GateïtoïSource Voltage VGS ±12 V
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
2.4 30 s 3.1 10 s 3.9
Steady
State
TA = 85°C
1.7 30 s 2.3 10 s 2.8
Power Dissipation
(Note 1)
Steady
State
TA = 25°C 0.48 W 30 s 0.82 10 s PD 1.25
Pulsed Drain Current tp = 10 s IDM 8.0 A
Operating Junction and Storage Temperature TJ,
Tstg
ï55 to
150 °C
Source Current (Body Diode) IS 0.82 A
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s) TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
JunctionïtoïAmbient ï Steady State (Note 1) RJA 260 °C/W
JunctionïtoïAmbient ï t 30 s RJA 153
JunctionïtoïAmbient ï t < 10 s (Note 1) RJA 100
Device Package Shipping
ORDERING INFORMATION
http://
30 V 70 m @ 4.5 V
55 m @ 10 V
RDS(on) MAX
3.1 A
ID MAXV(BR)DSS
SOTï23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
Drain
Gate
Source
SIMPLIFIED SCHEMATIC ï NïCHANNEL
NTR4170NT1G SOTï23
(PbïFree)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
110 m @ 2.5 V
TREM
TRE = Specific Device Code = Date Code = PbïFree Package
(Note: Microdot may be in either location)
2.8 A
2.0 A
NTR4170NT3G SOTï23
(PbïFree)
10000/Tape & Reel
