NTR4101PT1G ,Trench Power MOSFET -20 V Single P-Channel SOT-23Maximum ratings applied to the device are individual stress limit values (notnormal operating condi ..
NTR4170N ,NTR4170NELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Conditions Min T ..
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NTR4101-NTR4101PT1-NTR4101PT1G
Trench Power MOSFET -20 V Single P-Channel SOT-23
NTR4101P
Trench Power MOSFET
−20 V , Single P−Channel, SOT−23
Features Leading −20 V Trench for Low RDS(on) −1.8 V Rated for Low V oltage Gate Drive SOT−23 Surface Mount for Small Footprint Pb−Free Package is Available
Applications Load/Power Management for Portables Load/Power Management for Computing Charging Circuits and Battery Protection
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL RESISTANCE RATINGS Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)
