NTR2101P ,Small Signal MOSFET -8 V, -3.7 A, Single P-Channel, SOT-23ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min T ..
NTR2101PT1 , Small Signal MOSFET
NTR4003N ,Power MOSFET 30 V, 0.56 A. Single N-Channel SOT-23 PackageELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition ..
NTR4003NT3G , Small Signal MOSFET 30 V, 0.56 A, Single N−Channel, SOT−23
NTR4101 ,Trench Power MOSFET -20 V Single P-Channel SOT-232NTR4101PTYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)J1010T = 25°CV = −10 V − −2.4 ..
NTR4101P ,Trench Power MOSFET &20 V / Single P&Channel / SOT&23ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
OZ962R , High-Efficiency Inverter Controller
OZ964G , Change Summary
OZ964G , Change Summary
OZ965IR , High-Efficiency Inverter Controller
OZ965IR , High-Efficiency Inverter Controller
OZ990S , Intelligent Manager Smart PMU/GPIO
NTR2101P
Small Signal MOSFET -8 V, -3.7 A, Single P-Channel, SOT-23
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrainï toï Source Breakdown Voltage V V = 0 V, I =ï 250Aï 8.0 V(BR)DSS GS DDrainï toï Source Breakdown Voltage V /T 10 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°Cï 1.0 ADSS JV = 0 V, GSV =ï 6.4 VDST = 125°Cï 100JGateï toï Source Leakage Current I V = 0 V, V = ±8.0 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = ï 250Aï 0.40ï 1.0 VGS(TH) GS DS DNegative Threshold V /T 2.7 mV/°CGS(TH) JTemperature CoefficientDrainï toï Source On Resistance R V =ï 4.5 V, I =ï 3.5 A 39 52DS(on) GS D mV =ï 2.5 V, I =ï 3.0 A 52 72GS DV = ï 1.8 V, I =ï 2.0 A 79 120GS DForward Transconductance g V =ï 5.0 V, I =ï 3.5 A 9.0 SFS GS DCHARGES AND CAPACITANCESInput Capacitance C 1173 pFISSV = 0 V, f = 1.0 MHz, GSOutput Capacitance C 289OSSV =ï 4.0 VDSReverse Transfer Capacitance C 218RSSTotal Gate Charge Q 12 15 nCG(TOT)V =ï 4.5 V, V =ï 4.0 V, GS DSGateï toï Source Charge Q 3.8GSI =ï 3.5 ADGateï toï Drain Charge Q 2.5GDSWITCHING CHARACTERISTICS (Note 3)Turnï On Delay Time t 7.4 15 nsd(on)Rise Time t 15.75 25rV =ï 4.5 V, V =ï 4.0 V, GS DDI =ï 1.2 A, R = 6.0 D GTurnï Off Delay Time t 38 58d(off)Fall Time t 31 51fDRAINï SOURCE DIODE CHARACTERISTICSForward Diode Voltage V V = 0 V, VSD GST = 25°Cï 0.73ï 1.2JI =ï 1.2 AS2. Pulse Test: pulse width 300 s, duty cycle 2%.3. Switching characteristics are independent of operating junction temperatures.
