NTR1P02LT1G ,Power MOSFET 1.3 Amps, 20 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NTR1P02LT3G ,Power MOSFETELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NTR1P02T1 ,1 Amp, 20 Volts MOSFETELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NTR1P02T1G ,1 Amp, 20 Volts MOSFET3R , DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE ()−I , DRAIN CURRENT (AMPS)DS(on) D ..
NTR2101P ,Small Signal MOSFET -8 V, -3.7 A, Single P-Channel, SOT-23ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min T ..
NTR2101PT1 , Small Signal MOSFET
OZ962R , High-Efficiency Inverter Controller
OZ964G , Change Summary
OZ964G , Change Summary
OZ965IR , High-Efficiency Inverter Controller
OZ965IR , High-Efficiency Inverter Controller
OZ990S , Intelligent Manager Smart PMU/GPIO
NTR1P02LT1-NTR1P02LT1G
Power MOSFET 1.3 Amps, 20 Volts
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V −20 V(BR)DSS(V = 0 V, I = −10 A)GS DZero Gate Voltage Drain Current I ADSS(V = −16 V, V = 0 V) −1.0DS GS(V = −16 V, V = 0 V, T = 125°C) −10DS GS JGate−Body Leakage Current (V = ± 12 V, V = 0 V) I ±100 nAGS DS GSSON CHARACTERISTICS (Note 1)Gate Threshold Voltage V −0.7 −1.0 −1.25 VGS(th)(V = V , I = −250 A)DS GS DStatic Drain−to−Source On−Resistance r DS(on)(V = −4.5 V, I = −0.75 A) 0.135 0.22GS D(V = −2.5 V, I = −0.5 A) 0.190 0.35GS DDYNAMIC CHARACTERISTICSInput Capacitance (V = −5.0 V) C 225 pFDS issOutput Capacitance (V = −5.0 V) C 130DS ossTransfer Capacitance (V = −5.0 V) C 55DG rssSWITCHING CHARACTERISTICS (Note 2)Turn−On Delay Time t 7.0 nsd(on)Rise Time t 15r(V (V = −5.0 = −5.0 V, V, II = −1.0 A, = −1.0 A,DD DD D DR = 5.0 , R = 6.0 )L GTurn−Off Delay Time t 18d(off)Fall Time t 20fTotal Gate Charge (V = −16 V, I = −1.5 A, Q 5500 pCDS D TV = −4.0 V)GSSOURCE−DRAIN DIODE CHARACTERISTICSContinuous Current I −0.6 ASPulsed Current I −0.75SMForward Voltage (Note 2) (V = 0 V, I = −0.6 A) V −1.0 VGS S SDReverse Recovery Time t 16 nsrr(I = −1.0 A, V = 0 V,S GSt 11adI dI /dt = 100 A/ /dt = 100 A/s) s)S St 5.5bReverse Recovery Stored Charge Q 0.0085 CRR1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.2. Switching characteristics are independent of operating junction temperature.
