NTR1P02T1 ,1 Amp, 20 Volts MOSFETELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NTR1P02T1G ,1 Amp, 20 Volts MOSFET3R , DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE ()−I , DRAIN CURRENT (AMPS)DS(on) D ..
NTR2101P ,Small Signal MOSFET -8 V, -3.7 A, Single P-Channel, SOT-23ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min T ..
NTR2101PT1 , Small Signal MOSFET
NTR4003N ,Power MOSFET 30 V, 0.56 A. Single N-Channel SOT-23 PackageELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition ..
NTR4003NT3G , Small Signal MOSFET 30 V, 0.56 A, Single N−Channel, SOT−23
OZ962R , High-Efficiency Inverter Controller
OZ964G , Change Summary
OZ964G , Change Summary
OZ965IR , High-Efficiency Inverter Controller
OZ965IR , High-Efficiency Inverter Controller
OZ990S , Intelligent Manager Smart PMU/GPIO
NTR1P02-NTR1P02T1-NTR1P02T1G
1 Amp, 20 Volts MOSFET
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V(BR)DSS(V = 0 V, I = −10 A) −20 VGS D(Positive Temperature Coefficient) 32 mV/°CZero Gate Voltage Drain Current I ADSS(V = −20 V, V = 0 V, T = 25°C) −1.0DS GS J(V = −20 V, V = 0 V, T = 150°C) −10DS GS JGate−Body Leakage Current (V = ±20 V, V = 0 V) I ±100 nAGS DS GSSON CHARACTERISTICS (Note 1)Gate Threshold Voltage VGS(th)(V = V , I = −250 A) −1.1 −1.9 −2.3 VDS GS D(Negative Temperature Coefficient) −4.0 mV/°CStatic Drain−to−Source On−State Resistance R DS(on)(V = −10 V, I = −1.5 A) 0.148 0.180GS D(V = −4.5 V, I = −0.75 A) 0.235 0.280GS DDYNAMIC CHARACTERISTICSInput Capacitance C 165 pFiss(V = −5 V, V = 0 V, f = 1.0 MHz)DS GSOutput Capacitance C 110oss(V = −5 V, V = 0 V, f = 1.0 MHz)DS GSReverse Transfer Capacitance C 35rss(V = −5 V, V = 0 V, f = 1.0 MHz)DS GSSWITCHING CHARACTERISTICS (Note 2)Turn−On Delay Time t 7.0 nsd(on)(V = −15 V, I = −1 A, V = −5 V, R = 2.5 )DD D GS GRise Time t 9.0r(V = −15 V, I = −1 A, V = −5 V, R = 2.5 )DD D GS GTurn−Off Delay Time t 9.0d(off)(V = −15 V, I = −1 A, V = −5 V, R = 2.5 )DD D GS GFall Time t 3.0f(V = −15 V, I = −1 A, V = −5 V, R = 2.5 )DD D GS GTotal Gate Charge Q 2.5 nCtot(V = −15 V, V = −5 V, I = −0.8 A)DS GS DGate−Source Charge Q 0.75gs(V = −15 V, V = −5 V, I = −0.8 A)DS GS DGate−Drain Charge Q 1.0gd(V = −15 V, V = −5 V, I = −0.8 A)DS GS DBODY−DRAIN DIODE RATINGS (Note 1)Diode Forward On−Voltage (Note 2) V VSD(I = −0.6 A, V = 0 V) −0.8 −1.0S GS(I = −0.6 A, V = 0 V, T = 150°C) −0.6S GS JReverse Recovery Time t 13.5 nsrr(I (I = −1 A, dI 1A dI /dt /dt = 100 A/ 100 A/s, V V = 0 V) 0V)S S GSt 10.5at 3.0bReverse Recovery Stored Charge Q 0.008 CRR(I = −1 A, dI /dt = 100 A/s, V = 0 V)S S GS1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.2. Switching characteristics are independent of operating junction temperature.
