NTR0202PLT1G ,Power MOSFET 400 mA 20 V P-Channel SOT-233R , DRAIN−TO−SOURCE R , DRAIN−TO−SOURCE RESISTANCE () −I , DRAIN CURRENT (AMPS)DS(on) DS(on) DRES ..
NTR0202PLT3G ,Power MOSFET 400 mA 20 V P-Channel SOT-23Maximum ratings applied to the device are individual stress limit values (notnormal operating condi ..
NTR1P02 ,1 Amp, 20 Volts MOSFETMaximum ratings applied to the device are individual stress limit values (notnormal operating condi ..
NTR1P02LT1 ,Power MOSFET 1.3 Amps, 20 Volts2NTR1P02LT12.5 1.4V = −3 VGS V ≥ −10 VDS−2 V1.2−2.8 V T = 25°CJ2−2.6 V1−1.8 V−2.4 V1.50.8−2.2 VT = ..
NTR1P02LT1G ,Power MOSFET 1.3 Amps, 20 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NTR1P02LT3G ,Power MOSFETELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
OZ962R , High-Efficiency Inverter Controller
OZ964G , Change Summary
OZ964G , Change Summary
OZ965IR , High-Efficiency Inverter Controller
OZ965IR , High-Efficiency Inverter Controller
OZ990S , Intelligent Manager Smart PMU/GPIO
NTR0202PL-NTR0202PLT1-NTR0202PLT1G-NTR0202PLT3G
Power MOSFET 400 mA 20 V P-Channel SOT-23
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V(BR)DSS(V = 0 V, I = −10 A) −20 VGS D(Positive Temperature Coefficient) 33 mV/°CZero Gate Voltage Drain Current I ADSS(V = −20 V, V = 0 V, T = 25°C) −1.0DS GS J(V = −20 V, V = 0 V, T = 150°C) −10DS GS JGate−Body Leakage Current (V = ± 20 V, V = 0 V) I ±100 nAGS DS GSSON CHARACTERISTICS (Note 2)Gate Threshold Voltage VGS(th)(V = V , I = −250 A) −1.1 −1.9 −2.3 VDS GS D(Negative Temperature Coefficient) 3.0 mV/°CStatic Drain−to−Source On−Resistance R DS(on)(V = −10 V, I = −200 mA) 0.55 0.80GS D(V = −4.5 V, I = −50 mA) 0.80 1.10GS DForward Transconductance g 0.5 Mhosfs(V = −10 V, I = −200 mA)DS DDYNAMIC CHARACTERISTICSInput Capacitance C 70 pFiss(V = −5.0 V, V = 0 V,DS GSOutput Capacitance C 74ossF = 1.0 MHz F = 1.0 MHz) )Reverse Transfer Capacitance C 26rssSWITCHING CHARACTERISTICS (Note 3)Turn−On Delay Time t 3.0 nsd(on)Rise Time t 6.0r(V (V = −15 = −15 V V, , II = −200 mA, = −200 mA,DD DD D DV = −10 V, R = 6.0 )GS GTurn−Off Delay Time t 18d(off)Fall Time t 4fTotal Gate Charge Q 2.18 nCTOT(V = −15 V, I = −200 mA,DS DGate−Source Charge Q 0.41GSV V = −10 V = −10 V) )GS GSGate−Drain Charge Q 0.40GDBODY−DRAIN DIODE CHARACTERISTICS (Note 2)Diode Forward Voltage (Note 2) V VSD(I = −400 mA, V = 0 V) −0.8 −1.0S GS(I = −400 mA, V = 0 V, T = 150°C) −0.65S GS JReverse Recovery Time t 11.8 nsrr(I = −1.0 A, V = 0 V,S GSt 9adI dI /dt = 100 A/ /dt = 100 A/s s) )S St 3bReverse Recovery Stored Charge (I = −1.0 A, V = 0 V, Q 0.007 CS GS RRdI /dt = 100 A/s)S2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.3. Switching characteristics are independent of operating junction temperature.
