NTQD6968R2 ,Power MOSFET 6.6 Amps, 20 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
NTQS6463 ,Power MOSFET 6.2 Amps, 20 Volts3R , DRAIN−TO−SOURCE RESISTANCE () −I , DRAIN CURRENT (A)R , DRAIN−TO−SOURCEDS(on) DS(on) DRESISTA ..
NTR0202PL ,Power MOSFET 400 mA 20 V P-Channel SOT-23ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NTR0202PLT1 ,Power MOSFET 400 mA 20 V P-Channel SOT-232NTR0202PL0.75 1V ≥ −10 VDSV = −10 VGST = 25°CJ−6 V0.75−4 V−5.5 VT = 125°CJ0.5−5 V0.5−3.5 VT = 25°C ..
NTR0202PLT1 ,Power MOSFET 400 mA 20 V P-Channel SOT-23MAXIMUM RATINGS (T = 25°C unless otherwise noted)JSRating Symbol Value UnitDrain−to−Source Voltage ..
NTR0202PLT1G ,Power MOSFET 400 mA 20 V P-Channel SOT-233R , DRAIN−TO−SOURCE R , DRAIN−TO−SOURCE RESISTANCE () −I , DRAIN CURRENT (AMPS)DS(on) DS(on) DRES ..
OZ962R , High-Efficiency Inverter Controller
OZ964G , Change Summary
OZ964G , Change Summary
OZ965IR , High-Efficiency Inverter Controller
OZ965IR , High-Efficiency Inverter Controller
OZ990S , Intelligent Manager Smart PMU/GPIO
NTQD6968R2
Power MOSFET 6.6 Amps, 20 Volts
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain–to–Source Breakdown Voltage V Vdc(BR)DSS(V = 0 Vdc, I = 250 μAdc) 20 – –GS DTemperature Coefficient (Positive) – 12 – mV/°CZero Gate Voltage Collector Current I μAdcDSS(V = 16 Vdc, V = 0 Vdc, T = 25°C) – – 1.0DS GS J(V = 16 Vdc, V = 0 Vdc, T = 125°C) – – 10DS GS JGate–Body Leakage Current I nAdcGSS(V = ±12 Vdc, V = 0 Vdc) – – ±100GS DSON CHARACTERISTICSGate Threshold Voltage V VdcGS(th)(V = V , I = 250 μAdc) 0.6 0.75 1.2DS GS DTemperature Coefficient (Negative) – –2.5 – mV/°CStatic Drain–to–Source On–State Resistance R ΩDS(on)(V = 4.5 Vdc, I = 6.6 Adc) – – 0.022GS D(V = 2.5 Vdc, I = 5.3 Adc) – – 0.030GS D(V = 2.5 Vdc, I = 3.3 Adc) – – 0.030GS DForward Transconductance (V = 10 Vdc, I = 6.6 Adc) g – 19.2 – MhosDS D FSDYNAMIC CHARACTERISTICSInput Capacitance C – 900 – pFiss(V (V = 16 Vdc, V 16 Vd V = 0 Vdc, 0 VdDS GSOutput CapacitanceC – 350 –ossf f = 1.0 MHz = 1.0 MHz) )Transfer CapacitanceC – 100 –rssSWITCHING CHARACTERISTICS (Notes 4 & 5)Turn–On Delay Time t – 9.0 – nsd(on)Rise Time t – 35 –r(V (V = 16 Vdc, I 16 Vdc, I = 6.6 Adc, 6.6 Adc,DD DD D DV = 4.5 Vdc, R = 6.0 Ω)Turn–Off Delay Time GS G t – 70 –d(off)Fall Time t – 70 –fGate Charge Q – 13.5 20 nCtot(V (V = = 16 16 Vdc Vdc,,DS DSV = 4.5 Vdc, Q – 3.0 –GS GS gsII = 6.6 Adc) 66Ad )DQ – 4.0 –gdBODY–DRAIN DIODE RATINGS (Note 4)Forward On–Voltage (I = 6.0 Adc, V = 0 Vdc) V – – 1.2 VdcS GS SDReverse Recovery Time t – 30 – nsrr( (II = 6.15 Adc, V 615Ad V = 0 Vdc, 0VdS GSt – 19 –adI dI /dt /dt = 100 A/ = 100 A/μ μs s) )S St – 15 –bReverse Recovery Stored Charge Q – 0.017 – μCRR4. Pulse Test: Pulse Width = 300 μs, Duty Cycle = 2%.5. Switching characteristics are independent of operating junction temperature.
